NJV4030P Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NJV4030P

Código: 4030P

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 160 MHz

Capacitancia de salida (Cc): 40 pF

Ganancia de corriente contínua (hFE): 200

Encapsulados: SOT223

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NJV4030P datasheet

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 njt4030p njv4030p.pdf pdf_icon

NJV4030P

Bipolar Power Transistors PNP Silicon NJT4030P, NJV4030P Features Epoxy Meets UL 94, V-0 @ 0.125 in NJV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable PNP TRANSISTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3.0 AMPERES Compliant 40 VOLTS, 2.0 WATT

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 njv4030pt.pdf pdf_icon

NJV4030P

NJT4030P, NJV4030PT1G, NJV4030PT3G Bipolar Power Transistors PNP Silicon http //onsemi.com Features PNP TRANSISTOR Collector -Emitter Sustaining Voltage - 3.0 AMPERES VCEO(sus) = 40 Vdc (Min) @ IC = 10 mAdc 40 VOLTS, 2.0 WATTS High DC Current Gain - hFE = 200 (Min) @ IC = 1.0 Adc = 100 (Min) @ IC = 3.0 Adc Low Collector -Emitter Saturation Voltage - VCE(sat) = 0.2

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 njt4031n njv4031nt1g njv4031nt3g.pdf pdf_icon

NJV4030P

NJT4031N, NJV4031NT1G, NJV4031NT3G Bipolar Power Transistors NPN Silicon http //onsemi.com Features Epoxy Meets UL 94, V-0 @ 0.125 in NPN TRANSISTOR NJV Prefix for Automotive and Other Applications Requiring 3.0 AMPERES Unique Site and Control Change Requirements; AEC-Q101 40 VOLTS, 2.0 WATTS Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free a

 8.2. Size:132K  onsemi
 njv4031nt.pdf pdf_icon

NJV4030P

NJT4031N, NJV4031NT1G, NJV4031NT3G Bipolar Power Transistors NPN Silicon http //onsemi.com Features NPN TRANSISTOR Collector -Emitter Sustaining Voltage - 3.0 AMPERES VCEO(sus) = 40 Vdc (Min) @ IC = 10 mAdc High DC Current Gain - 40 VOLTS, 2.0 WATTS hFE = 200 (Min) @ IC = 1.0 Adc = 100 (Min) @ IC = 3.0 Adc Low Collector -Emitter Saturation Voltage - VCE(sat) = 0.1

MOSTRAR MÁS

Otros transistores... MPSA42RLRMG, MPSA42RLRPG, MPSA42ZL1G, MSB1218A, MSB92AS1WT1G, MSC2712YT1G, MSD601-RT1, MSD601-ST1, S8050, NJVMJB44H11, NJVMJB45H11, NJVMJD31CT4G-VF01, NJVMJD32CT4G-VF01, NSB4904DW1T2G, NSS1C200MZ4, NSS20200DMT, NSS40300MZ4