NJV4030P - параметры, поиск аналогов, даташиты транзистора

NJV4030P Datasheet (PDF)

..1. Size:190K onsemi
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Bipolar Power TransistorsPNP SiliconNJT4030P, NJV4030PFeatures Epoxy Meets UL 94, V-0 @ 0.125 in NJV Prefix for Automotive and Other Applications Requiringwww.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapablePNP TRANSISTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3.0 AMPERESCompliant40 VOLTS, 2.0 WATT

0.1. Size:132K onsemi
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NJT4030P,NJV4030PT1G,NJV4030PT3GBipolar Power TransistorsPNP Siliconhttp://onsemi.comFeaturesPNP TRANSISTOR Collector -Emitter Sustaining Voltage - 3.0 AMPERESVCEO(sus) = 40 Vdc (Min) @ IC = 10 mAdc40 VOLTS, 2.0 WATTS High DC Current Gain - hFE = 200 (Min) @ IC = 1.0 Adc= 100 (Min) @ IC = 3.0 Adc Low Collector -Emitter Saturation Voltage - VCE(sat) = 0.2

8.1. Size:180K onsemi
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NJT4031N,NJV4031NT1G,NJV4031NT3GBipolar Power TransistorsNPN Siliconhttp://onsemi.comFeatures Epoxy Meets UL 94, V-0 @ 0.125 inNPN TRANSISTOR NJV Prefix for Automotive and Other Applications Requiring3.0 AMPERESUnique Site and Control Change Requirements; AEC-Q10140 VOLTS, 2.0 WATTSQualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free a

8.2. Size:132K onsemi
njv4031nt.pdf pdf_icon

NJT4031N,NJV4031NT1G,NJV4031NT3GBipolar Power TransistorsNPN Siliconhttp://onsemi.comFeaturesNPN TRANSISTOR Collector -Emitter Sustaining Voltage - 3.0 AMPERESVCEO(sus) = 40 Vdc (Min) @ IC = 10 mAdc High DC Current Gain - 40 VOLTS, 2.0 WATTShFE = 200 (Min) @ IC = 1.0 Adc= 100 (Min) @ IC = 3.0 Adc Low Collector -Emitter Saturation Voltage - VCE(sat) = 0.1

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