NSB4904DW1T2G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSB4904DW1T2G
Código: RC*
Material: Si
Polaridad de transistor: NPN*PNP
Resistencia de Entrada Base R1 = 47 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.187 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: SOT363
Búsqueda de reemplazo de transistor bipolar NSB4904DW1T2G
NSB4904DW1T2G Datasheet (PDF)
nsb4904dw1t1g nsb4904dw1t2g.pdf
NSB4904DW1T1G,NSB4904DW1T2GDual Bias ResistorTransistorsNPN and PNP Silicon Surface Mounthttp://onsemi.comTransistors with Monolithic BiasResistor Network6 5 4The Bias Resistor Transistor (BRT) contains a single transistor with R1 R2a monolithic bias network consisting of two resistors; a series base Q1resistor and a base-emitter resistor. These digital transistors areQ2
nsb4904dw1t.pdf
NSB4904DW1T1G,NSB4904DW1T2GDual Bias ResistorTransistorsNPN and PNP Silicon Surface Mounthttp://onsemi.comTransistors with Monolithic BiasResistor Network6 5 4The Bias Resistor Transistor (BRT) contains a single transistor with R1 R2a monolithic bias network consisting of two resistors; a series base Q1resistor and a base-emitter resistor. These digital transistors areQ2
nsb4904dw1.pdf
NSB4904DW1T1G,NSB4904DW1T2GDual Bias ResistorTransistorsNPN and PNP Silicon Surface Mounthttp://onsemi.comTransistors with Monolithic BiasResistor Network6 5 4The Bias Resistor Transistor (BRT) contains a single transistor with R1 R2a monolithic bias network consisting of two resistors; a series base Q1resistor and a base-emitter resistor. These digital transistors areQ2
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