NSS1C200MZ4 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSS1C200MZ4
Código: 1C200
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.8 W
Tensión colector-base (Vcb): 140 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 120 MHz
Capacitancia de salida (Cc): 22 pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: SOT223
Búsqueda de reemplazo de transistor bipolar NSS1C200MZ4
NSS1C200MZ4 Datasheet (PDF)
nss1c200mz4 nsv1c200mz4.pdf
PNP Transistor, Low VCE(sat)100 V, 2.0 ANSS1C200MZ4,NSV1C200MZ4ON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowwww.onsemi.comsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applications-100 VOLTS, 2.0 AMPSwhere affordable ef
nss1c200mz4.pdf
NSS1C200MZ4100 V, 2.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa
nss1c200mz4t1g.pdf
NSS1C200MZ4,NSV1C200MZ4100 V, 2.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy cont
nss1c200lt1.pdf
NSS1C200LT1G100 V, 3.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is import
nss1c200l nsv1c200l.pdf
NSS1C200L, NSV1C200L100 V, 2.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is i
nss1c200lt1g.pdf
SMD Type TransistorsPNP TransistorsNSS1C200LT1G (KSS1C200LT1G)SOT-23Unit: mm2.9+0.1-0.1+0.10.4 -0.13 Features Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-100V1 2+0.1+0.050.95 -0.1 0.1 -0.01COLLECTOR1.9+0.1-0.11.BaseBASE2.Emitter3.collectorEMITTER Absolute Maximum Ratings Ta = 25Parameter Symbol Rating U
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
