NSS1C200MZ4 Specs and Replacement

Type Designator: NSS1C200MZ4

SMD Transistor Code: 1C200

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 140 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 120 MHz

Collector Capacitance (Cc): 22 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT223

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NSS1C200MZ4 datasheet

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NSS1C200MZ4

PNP Transistor, Low VCE(sat) 100 V, 2.0 A NSS1C200MZ4, NSV1C200MZ4 ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low www.onsemi.com saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications -100 VOLTS, 2.0 AMPS where affordable ef... See More ⇒

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NSS1C200MZ4

NSS1C200MZ4 100 V, 2.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa... See More ⇒

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NSS1C200MZ4

NSS1C200MZ4, NSV1C200MZ4 100 V, 2.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy cont... See More ⇒

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NSS1C200MZ4

NSS1C200LT1G 100 V, 3.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is import... See More ⇒

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Detailed specifications: MSD601-RT1, MSD601-ST1, NJV4030P, NJVMJB44H11, NJVMJB45H11, NJVMJD31CT4G-VF01, NJVMJD32CT4G-VF01, NSB4904DW1T2G, TIP3055, NSS20200DMT, NSS40300MZ4, NSS40301MZ4, NSS60101DMR6, NSS60200DMT, NSS60200L, NSS60201SMT, NSS60600MZ4

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