NSS60200DMT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSS60200DMT
Código: AD*
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 2.27 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 155 MHz
Capacitancia de salida (Cc): 18 pF
Ganancia de corriente contínua (hFE): 150
Encapsulados: WDFN6 WDFNW6
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NSS60200DMT datasheet
nss60200dmt.pdf
DATA SHEET www.onsemi.com Low VCE(sat) PNP Transistors 60 Volt, 2 Amp PNP Low VCE(sat) Transistors 60 V, 2 A MARKING NSS60200DMT DIAGRAM onsemi s e2PowerEdge family of low VCE(sat) transistors are 1 miniature surface mount devices featuring ultra low saturation voltage WDFN6 AD M (VCE(sat)) and high current gain capability. These are designed for use CASE 506AN in low voltage, h
nss60200l.pdf
NSS60200L 60 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These www.onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. -
nss60200l-d.pdf
NSS60200LT1G 60 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importa
nss60201smt.pdf
DATA SHEET www.onsemi.com Low VCE(sat) NPN Transistor 60 Volt, 2 Amp NPN Low VCE(sat) Transistor 60 V, 2 A MARKING NSS60201SMT DIAGRAM onsemi s e2PowerEdge family of low VCE(sat) transistors are 1 6 WDFN6 miniature surface mount devices featuring ultra low saturation voltage AQ MG 2 5 CASE 506AN G (VCE(sat)) and high current gain capability. These are designed for use 3 4 1
Otros transistores... NJVMJD31CT4G-VF01, NJVMJD32CT4G-VF01, NSB4904DW1T2G, NSS1C200MZ4, NSS20200DMT, NSS40300MZ4, NSS40301MZ4, NSS60101DMR6, 2N3906, NSS60200L, NSS60201SMT, NSS60600MZ4, NST1601CL, NST3904MX2, NST3906DXV6T1, NST3906MX2, NST4617MX2
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