NSV40501UW3 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSV40501UW3
Código: VB*
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.875
W
Tensión colector-base (Vcb): 40
V
Tensión colector-emisor (Vce): 40
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150
MHz
Capacitancia de salida (Cc): 70
pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: WDFN3
Búsqueda de reemplazo de NSV40501UW3
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NSV40501UW3 datasheet
..1. Size:163K onsemi
nss40501uw3 nsv40501uw3.pdf 

NSS40501UW3, NSV40501UW3 40 V, 5.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy contr
0.1. Size:108K onsemi
nsv40501uw3t2g.pdf 

NSS40501UW3, NSV40501UW3 40 V, 5.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy contr
9.1. Size:86K onsemi
nss40200l nsv40200l.pdf 

NSS40200L, NSV40200L 40 V, 2.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These www.onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is im
9.2. Size:132K onsemi
nsv40300mdr2g.pdf 

NSS40300MDR2G, NSV40300MDR2G Dual Matched 40 V, 6.0 A, Low VCE(sat) PNP Transistor These transistors are part of the ON Semiconductor e2PowerEdge http //onsemi.com family of Low VCE(sat) transistors. They are assembled to create a pair of devices highly matched in all parameters, including ultra low 40 VOLTS saturation voltage VCE(sat), high current gain and Base/Emitter turn on 6.0 A
9.3. Size:86K onsemi
nss40201lt1g nsv40201lt1g.pdf 

NSS40201LT1G, NSV40201LT1G 40 V, 2.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) www.onsemi.com transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These 40 VOLTS, 2.0 AMPS are designed for use in low voltage, high speed switching applications NPN LOW VCE(sat) TRA
9.4. Size:127K onsemi
nsv40200lt1g.pdf 

NSS40200LT1G, NSV40200LT1G 40 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) http //onsemi.com transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These -40 VOLTS are designed for use in low voltage, high speed switching applications 4.0 AMPS where affordable
9.5. Size:98K onsemi
nsv40302pdr2g.pdf 

NSS40302PDR2G Complementary 40 V, 6.0 A, Low VCE(sat) Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed www.onsemi.com for use in low voltage, high speed switching applications where affordable efficient energy control is important
9.6. Size:106K onsemi
nsv40301mdr2g.pdf 

NSS40301MDR2G Dual Matched 40 V, 6.0 A, Low VCE(sat) NPN Transistor These transistors are part of the ON Semiconductor e2PowerEdge family of Low VCE(sat) transistors. They are assembled to create a pair of devices highly matched in all parameters, including ultra low saturation voltage VCE(sat), high current gain and Base/Emitter turn on http //onsemi.com voltage. Typical applications
9.7. Size:89K onsemi
nsv40300mz4t1g.pdf 

NSS40300MZ4 Bipolar Power Transistors 40 V, 3.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation http //onsemi.com voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where PNP TRANSISTOR affordable effic
9.8. Size:106K onsemi
nsv40201lt1g.pdf 

NSS40201LT1G, NSV40201LT1G 40 V, 2.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) http //onsemi.com transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These 40 VOLTS, 2.0 AMPS are designed for use in low voltage, high speed switching applications NPN LOW VCE(sat)
9.9. Size:88K onsemi
nsv40301mz4t1g.pdf 

NSS40301MZ4 Bipolar Power Transistors 40 V, 3.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation http //onsemi.com voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where NPN TRANSISTOR affordable effic
9.10. Size:219K onsemi
nss40300mdr2g nsv40300mdr2g.pdf 

NSS40300MDR2G, NSV40300MDR2G Dual Matched 40 V, 6.0 A, Low VCE(sat) PNP Transistor These transistors are part of the ON Semiconductor e2PowerEdge http //onsemi.com family of Low VCE(sat) transistors. They are assembled to create a pair of devices highly matched in all parameters, including ultra low 40 VOLTS saturation voltage VCE(sat), high current gain and Base/Emitter turn on 6.0 A
9.11. Size:72K onsemi
nsv40200uw6t1g.pdf 

NSS40200UW6T1G, NSV40200UW6T1G 40 V, 2.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy
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