NSVF4009SG4 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSVF4009SG4

Código: GG

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.12 W

Tensión colector-base (Vcb): 10 V

Tensión colector-emisor (Vce): 3.5 V

Tensión emisor-base (Veb): 2.5 V

Corriente del colector DC máxima (Ic): 0.04 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 20000 MHz

Ganancia de corriente contínua (hFE): 50

Encapsulados: MCPH4

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NSVF4009SG4 datasheet

 ..1. Size:718K  onsemi
 nsvf4009sg4.pdf pdf_icon

NSVF4009SG4

NSVF4009SG4 RF Transistor for Low Noise Amplifier This RF transistor is designed for low noise amplifier applications. MCPH package is suitable for use under high temperature environment because it www.onsemi.com has superior heat radiation characteristics. This RF transistor is AEC-Q101 qualified and PPAP capable for automotive applications. 3.5 V, 40 mA Features fT = 25 GHz

 8.1. Size:684K  onsemi
 nsvf4020sg4.pdf pdf_icon

NSVF4009SG4

NSVF4020SG4 RF Transistor for Low Noise Amplifier This RF transistor is designed for low noise amplifier applications. MCPH package is suitable for use under high temperature environment because it www.onsemi.com has superior heat radiation characteristics. This RF transistor is AEC-Q101 qualified and PPAP capable for automotive applications. 8 V, 150 mA Features fT = 16 GHz t

 8.2. Size:838K  onsemi
 nsvf4017sg4.pdf pdf_icon

NSVF4009SG4

NSVF4017SG4 RF Transistor for Low Noise Amplifier 12 V, 100 mA, fT = 10 GHz typ. This RF transistor is designed for low noise amplifier applications. www.onsemi.com MCPH package is suitable for use under high temperature environment because it has superior heat radiation characteristics. This RF transistor is AEC-Q101 qualified and PPAP capable for automotive applications. Features 1

 8.3. Size:216K  onsemi
 nsvf4015sg4.pdf pdf_icon

NSVF4009SG4

NSVF4015SG4 RF Transistor for Low Noise Amplifier 12 V, 100 mA, fT = 10 GHz typ. This RF transistor is designed for low noise amplifier applications. www.onsemi.com MCPH package is suitable for use under high temperature environment because it has superior heat radiation characteristics. This RF transistor is AEC-Q101 qualified and PPAP capable for 12 V, 100 mA automotive applications

MOSTRAR MÁS

Otros transistores... NSVBCH807-16L, NSVBCH807-25L, NSVBCH807-40L, NSVBCH817-16L, NSVBCH817-25L, NSVBCH817-40L, NSVBT2222ADW1, NSVF3007SG3, A1013, NSVF4015SG4, NSVF4017SG4, NSVF4020SG4, NSVF5488SK, NSVF5490SK, NSVF6001SB6, NSVF6003SB6, NSVMBT3904DW1