NSVF4009SG4 Datasheet, Equivalent, Cross Reference Search
Type Designator: NSVF4009SG4
SMD Transistor Code: GG
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.12 W
Maximum Collector-Base Voltage |Vcb|: 10 V
Maximum Collector-Emitter Voltage |Vce|: 3.5 V
Maximum Emitter-Base Voltage |Veb|: 2.5 V
Maximum Collector Current |Ic max|: 0.04 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20000 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: MCPH4
NSVF4009SG4 Transistor Equivalent Substitute - Cross-Reference Search
NSVF4009SG4 Datasheet (PDF)
nsvf4009sg4.pdf
NSVF4009SG4 RF Transistor for Low Noise Amplifier This RF transistor is designed for low noise amplifier applications. MCPH package is suitable for use under high temperature environment because it www.onsemi.com has superior heat radiation characteristics. This RF transistor is AEC-Q101 qualified and PPAP capable for automotive applications. 3.5 V, 40 mA Features fT = 25 GHz
nsvf4020sg4.pdf
NSVF4020SG4 RF Transistor for Low Noise Amplifier This RF transistor is designed for low noise amplifier applications. MCPH package is suitable for use under high temperature environment because it www.onsemi.com has superior heat radiation characteristics. This RF transistor is AEC-Q101 qualified and PPAP capable for automotive applications. 8 V, 150 mA Features fT = 16 GHz t
nsvf4017sg4.pdf
NSVF4017SG4RF Transistor for Low NoiseAmplifier12 V, 100 mA, fT = 10 GHz typ.This RF transistor is designed for low noise amplifier applications.www.onsemi.comMCPH package is suitable for use under high temperatureenvironment because it has superior heat radiation characteristics.This RF transistor is AEC-Q101 qualified and PPAP capable forautomotive applications.Features 1
nsvf4015sg4.pdf
NSVF4015SG4RF Transistor for Low NoiseAmplifier12 V, 100 mA, fT = 10 GHz typ.This RF transistor is designed for low noise amplifier applications.www.onsemi.comMCPH package is suitable for use under high temperatureenvironment because it has superior heat radiation characteristics.This RF transistor is AEC-Q101 qualified and PPAP capable for12 V, 100 mAautomotive applications
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
