NSVF4009SG4 Specs and Replacement
Type Designator: NSVF4009SG4
SMD Transistor Code: GG
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.12 W
Maximum Collector-Base Voltage |Vcb|: 10 V
Maximum Collector-Emitter Voltage |Vce|: 3.5 V
Maximum Emitter-Base Voltage |Veb|: 2.5 V
Maximum Collector Current |Ic max|: 0.04 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 20000 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Package: MCPH4
NSVF4009SG4 Substitution
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NSVF4009SG4 datasheet
NSVF4009SG4 RF Transistor for Low Noise Amplifier This RF transistor is designed for low noise amplifier applications. MCPH package is suitable for use under high temperature environment because it www.onsemi.com has superior heat radiation characteristics. This RF transistor is AEC-Q101 qualified and PPAP capable for automotive applications. 3.5 V, 40 mA Features fT = 25 GHz ... See More ⇒
NSVF4020SG4 RF Transistor for Low Noise Amplifier This RF transistor is designed for low noise amplifier applications. MCPH package is suitable for use under high temperature environment because it www.onsemi.com has superior heat radiation characteristics. This RF transistor is AEC-Q101 qualified and PPAP capable for automotive applications. 8 V, 150 mA Features fT = 16 GHz t... See More ⇒
NSVF4017SG4 RF Transistor for Low Noise Amplifier 12 V, 100 mA, fT = 10 GHz typ. This RF transistor is designed for low noise amplifier applications. www.onsemi.com MCPH package is suitable for use under high temperature environment because it has superior heat radiation characteristics. This RF transistor is AEC-Q101 qualified and PPAP capable for automotive applications. Features 1 ... See More ⇒
NSVF4015SG4 RF Transistor for Low Noise Amplifier 12 V, 100 mA, fT = 10 GHz typ. This RF transistor is designed for low noise amplifier applications. www.onsemi.com MCPH package is suitable for use under high temperature environment because it has superior heat radiation characteristics. This RF transistor is AEC-Q101 qualified and PPAP capable for 12 V, 100 mA automotive applications... See More ⇒
Detailed specifications: NSVBCH807-16L, NSVBCH807-25L, NSVBCH807-40L, NSVBCH817-16L, NSVBCH817-25L, NSVBCH817-40L, NSVBT2222ADW1, NSVF3007SG3, A1013, NSVF4015SG4, NSVF4017SG4, NSVF4020SG4, NSVF5488SK, NSVF5490SK, NSVF6001SB6, NSVF6003SB6, NSVMBT3904DW1
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