NSVMSD1819A-RT1G Todos los transistores

 

NSVMSD1819A-RT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSVMSD1819A-RT1G
   Código: ZR*
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 210
   Paquete / Cubierta: SOT323
 

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NSVMSD1819A-RT1G Datasheet (PDF)

 0.1. Size:57K  onsemi
 msd1819a-rt1g nsvmsd1819a-rt1g.pdf pdf_icon

NSVMSD1819A-RT1G

MSD1819A-RT1G,NSVMSD1819A-RT1GGeneral Purpose AmplifierTransistorNPN Silicon Surface Mountwww.onsemi.comThis NPN Silicon Epitaxial Planar Transistor is designed for generalpurpose amplifier applications. This device is housed in theSC-70/SOT-323 package which is designed for low power surfacemount applications.FeaturesSC-70 (SOT-323)CASE 419 High hFE, 210-460STYLE

 8.1. Size:88K  onsemi
 msd42wt1g nsvmsd42wt1g.pdf pdf_icon

NSVMSD1819A-RT1G

MSD42WT1G,NSVMSD42WT1GNPN High VoltageTransistorsThis NPN Silicon Planar Transistor is designed for general purposeamplifier applications. This device is housed in the SC-70/SOT-323package which is designed for low power surface mount applications. http://onsemi.comFeaturesCOLLECTOR These Devices are Pb-Free, Halogen Free and are RoHS Compliant3 NSV Prefix for Automo

 8.2. Size:92K  onsemi
 nsvmsd42wt1g.pdf pdf_icon

NSVMSD1819A-RT1G

MSD42WT1G,NSVMSD42WT1GNPN High VoltageTransistorsThis NPN Silicon Planar Transistor is designed for general purposeamplifier applications. This device is housed in the SC-70/SOT-323package which is designed for low power surface mount applications. http://onsemi.comFeaturesCOLLECTOR These Devices are Pb-Free, Halogen Free and are RoHS Compliant3 NSV Prefix for Automo

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History: 2N2244

 

 
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