NSVMSD1819A-RT1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSVMSD1819A-RT1G

Código: ZR*

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 210

Encapsulados: SOT323

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NSVMSD1819A-RT1G datasheet

 0.1. Size:57K  onsemi
 msd1819a-rt1g nsvmsd1819a-rt1g.pdf pdf_icon

NSVMSD1819A-RT1G

MSD1819A-RT1G, NSVMSD1819A-RT1G General Purpose Amplifier Transistor NPN Silicon Surface Mount www.onsemi.com This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. Features SC-70 (SOT-323) CASE 419 High hFE, 210-460 STYLE

 8.1. Size:88K  onsemi
 msd42wt1g nsvmsd42wt1g.pdf pdf_icon

NSVMSD1819A-RT1G

MSD42WT1G, NSVMSD42WT1G NPN High Voltage Transistors This NPN Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. http //onsemi.com Features COLLECTOR These Devices are Pb-Free, Halogen Free and are RoHS Compliant 3 NSV Prefix for Automo

 8.2. Size:92K  onsemi
 nsvmsd42wt1g.pdf pdf_icon

NSVMSD1819A-RT1G

MSD42WT1G, NSVMSD42WT1G NPN High Voltage Transistors This NPN Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. http //onsemi.com Features COLLECTOR These Devices are Pb-Free, Halogen Free and are RoHS Compliant 3 NSV Prefix for Automo

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