NSVMSD1819A-RT1G pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

NSVMSD1819A-RT1G Specs and Replacement

Type Designator: NSVMSD1819A-RT1G

SMD Transistor Code: ZR*

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 210

Noise Figure, dB: -

Package: SOT323

NSVMSD1819A-RT1G Substitution

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NSVMSD1819A-RT1G datasheet

0.1. Size:57K onsemi

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MSD1819A-RT1G, NSVMSD1819A-RT1G General Purpose Amplifier Transistor NPN Silicon Surface Mount www.onsemi.com This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. Features SC-70 (SOT-323) CASE 419 High hFE, 210-460 STYLE... See More ⇒

8.1. Size:88K onsemi

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MSD42WT1G, NSVMSD42WT1G NPN High Voltage Transistors This NPN Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. http //onsemi.com Features COLLECTOR These Devices are Pb-Free, Halogen Free and are RoHS Compliant 3 NSV Prefix for Automo... See More ⇒

8.2. Size:92K onsemi

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