SMBT3906DW1 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SMBT3906DW1

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Capacitancia de salida (Cc): 4.5 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: A2*

 Búsqueda de reemplazo de SMBT3906DW1

- Selecciónⓘ de transistores por parámetros

 

SMBT3906DW1 datasheet

 ..1. Size:126K  onsemi
mbt3906dw1 smbt3906dw1.pdf pdf_icon

SMBT3906DW1

MBT3906DW1, SMBT3906DW1 Dual General Purpose Transistor The MBT3906DW1 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applicat

 0.1. Size:130K  onsemi
mbt3906dw1t1g smbt3906dw1t1g.pdf pdf_icon

SMBT3906DW1

MBT3906DW1T1G, SMBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general http //onsemi.com purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount

 6.1. Size:178K  siemens
smbt3906.pdf pdf_icon

SMBT3906DW1

PNP Silicon Switching Transistor SMBT 3906 High DC current gain 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type SMBT 3904 (NPN) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 SMBT 3906 s2A Q68000-A4417 B E C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 40 V Collector-base voltage VCB0

 6.2. Size:31K  siemens
smbt3906 s2a sot363.pdf pdf_icon

SMBT3906DW1

SMBT 3906S PNP Silicon Switching Transistor Array 4 High DC current gain 0.1mA to 100mA 5 Low collector-emitter saturation voltage 6 Two ( galvanic) internal isolated Transistors with high matching in one package Complementary type SMBT 3904S (NPN) 3 2 VPS05604 1 Type Marking Ordering Code Pin Configuration Package SMBT 3906S s2A Q62702-A1202 1/4=E1/E2 2/5=B1/B

Otros transistores... PN2907ATF, PN2907ATFR, PZT751T1, SBC817-16L, SBC817-25L, SBC817-40L, SBC847BPDXV6, SMBT3904DW1, D667, SMMBT2222AL, SMMBT2222AWT1G, SMMBT2907AL, SMMBT3904L, SMMBT3904TT1G, SMMBT3904WT1G, SMMBT3906L, SMMBT3906WT1G