TIP112G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TIP110, TIP111, TIP112(NPN); TIP115, TIP116,TIP117 (PNP)Plastic Medium-PowerComplementary Siliconwww.onsemi.comTransistorsDARLINGTONDesigned for general-purpose amplifier and low-speed switchingapplications. 2 AMPERECOMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS High DC Current Gain -hFE = 2500 (Typ) @ IC 60-80-100 VOLTS, 50 WATTS= 1.0 Adc Collector-Emitt

TIP110/112TIP115/117COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE APPLICATIONS 32 LINEAR AND SWITCHING INDUSTRIAL1EQUIPMENT TO-220DESCRIPTION The TIP110 and TIP112 are siliconEpitaxial-Base NPN

MCCMicro Commercial ComponentsTMTIP110/111/11220736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features The complementary PNP types are the TIP115/116/117 respectivelySilicon NPN Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information)Darlington Epoxy

UNISONIC TECHNOLOGIES CO., LTD TIP112 NPN SILICON TRANSISTOR NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR DESCRIPTION The UTC TIP112 is designed for such applications as: DC/DC converters supply line switching, battery charger, LCD backlighting,peripheral drivers, Driver in low supply voltage applications (e.g. lamps and LEDs) and inductive load driver (e.g. relays, buzzers and

SEMICONDUCTOR TIP112TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORMONOLITHIC CONSTRUCTION WITH BUILT IN ABASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.RS FEATURESPD High DC Current Gain. DIM MILLIMETERS: hFE=1000(Min.), VCE=4V, IC=1A.A 10.30 MAXB 15.30 MAX Low Collector-Emitter Saturation Voltage.C 0.80_+ Complementary to TIP117. D 3.60 0.20TE 3.00F

SEMICONDUCTOR TIP112FTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORMONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.ACDIM MILLIMETERSS_FEATURES A 10.0 + 0.3_+B 15.0 0.3EHigh DC Current Gain. C _2.70 0.3+D 0.76+0.09/-0.05: hFE=1000(Min.), VCE=4V, IC=1A._E 3.2 0.2+_F 3.0 0.3+Low Collector-Emitter Saturation Volta

TIP112 TO-220 Darlington Transistor (NPN)TO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage 100 V VCE

Spec. No. : HE200203HI-SINCERITYIssued Date : 2000.08.01Revised Date : 2004.11.19MICROELECTRONICS CORP.Page No. : 1/5HTIP112NPN EPITAXIAL PLANAR TRANSISTORDescriptionTO-220The HTIP112 is designed for use in general purpose amplifier and low-speedswitching applications. Darlington SchematicCAbsolute Maximum Ratings (TA=25C)B Maximum TemperaturesStorage Temp

DARLINGTON COMPLEMENTARY POWER TRANSISTORS RTIP112/TIP117 APPLICATIONS Engine ignition High frequency switching power supply High frequency power transform power amplifier circuit FEATURES Hi

isc Silicon NPN Darlington Power Transistor TIP112DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 1AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.5V(Max)@ I = 2ACE(sat) CComplement to Type TIP117Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATION