TIP112G Datasheet, Equivalent, Cross Reference Search
Type Designator: TIP112G
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO220
TIP112G Transistor Equivalent Substitute - Cross-Reference Search
TIP112G Datasheet (PDF)
tip110 tip110g tip111 tip111g tip112 tip112g tip115 tip115g tip116 tip116g tip117 tip117g.pdf
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TIP110, TIP111, TIP112(NPN); TIP115, TIP116,TIP117 (PNP)Plastic Medium-PowerComplementary Siliconwww.onsemi.comTransistorsDARLINGTONDesigned for general-purpose amplifier and low-speed switchingapplications. 2 AMPERECOMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS High DC Current Gain -hFE = 2500 (Typ) @ IC 60-80-100 VOLTS, 50 WATTS= 1.0 Adc Collector-Emitt
tip110 tip112 tip115 tip117.pdf
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TIP110/112TIP115/117COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE APPLICATIONS 32 LINEAR AND SWITCHING INDUSTRIAL1EQUIPMENT TO-220DESCRIPTION The TIP110 and TIP112 are siliconEpitaxial-Base NPN
tip110 tip112 tip115 tip117 .pdf
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TIP110/112TIP115/117COMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODEAPPLICATIONS LINEAR AND SWITCHING INDUSTRIAL32EQUIPMENT1DESCRIPTIONTO-220The TIP110 and TIP112 are silicon epitaxial-baseNPN transistors in mon
tip110 tip111 tip112 to-220.pdf
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MCCMicro Commercial ComponentsTMTIP110/111/11220736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features The complementary PNP types are the TIP115/116/117 respectivelySilicon NPN Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information)Darlington Epoxy
tip112l-tn3.pdf
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UNISONIC TECHNOLOGIES CO., LTD TIP112 NPN SILICON TRANSISTOR NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR DESCRIPTION The UTC TIP112 is designed for such applications as: DC/DC converters supply line switching, battery charger, LCD backlighting,peripheral drivers, Driver in low supply voltage applications (e.g. lamps and LEDs) and inductive load driver (e.g. relays, buzzers and
tip112.pdf
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SEMICONDUCTOR TIP112TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORMONOLITHIC CONSTRUCTION WITH BUILT IN ABASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.RS FEATURESPD High DC Current Gain. DIM MILLIMETERS: hFE=1000(Min.), VCE=4V, IC=1A.A 10.30 MAXB 15.30 MAX Low Collector-Emitter Saturation Voltage.C 0.80_+ Complementary to TIP117. D 3.60 0.20TE 3.00F
tip112f.pdf
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SEMICONDUCTOR TIP112FTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORMONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.ACDIM MILLIMETERSS_FEATURES A 10.0 + 0.3_+B 15.0 0.3EHigh DC Current Gain. C _2.70 0.3+D 0.76+0.09/-0.05: hFE=1000(Min.), VCE=4V, IC=1A._E 3.2 0.2+_F 3.0 0.3+Low Collector-Emitter Saturation Volta
tip112.pdf
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TIP112 TO-220 Darlington Transistor (NPN)TO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage 100 V VCE
htip112.pdf
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Spec. No. : HE200203HI-SINCERITYIssued Date : 2000.08.01Revised Date : 2004.11.19MICROELECTRONICS CORP.Page No. : 1/5HTIP112NPN EPITAXIAL PLANAR TRANSISTORDescriptionTO-220The HTIP112 is designed for use in general purpose amplifier and low-speedswitching applications. Darlington SchematicCAbsolute Maximum Ratings (TA=25C)B Maximum TemperaturesStorage Temp
tip112.pdf
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isc Silicon NPN Darlington Power Transistor TIP112DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 1AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.5V(Max)@ I = 2ACE(sat) CComplement to Type TIP117Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATION
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .