TT2146 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2003Sanyo Sales ToolSanyo Semiconductor.SPS/ADAPTOR/CHARGERDSC/PDA/B/L and LCD MonitorNB/MBWLANSPS/ADAPTOR/CHARGER10KK/5KK/5KK/MBLOCK BIP H/DLA5648 TT2188/46/94/48/58MAIN SW(SPS)TM3060B/64B/68GLA5645 A2099/C5888L5038 K2624/5/8LSMAIN LA5614M K2678LS/3491SW(ADP/CHA)

Ordering number : ENN7550TT2142NPN Triple Diffused Planar Silicon TransistorTT2142Color TV Horizontal DeflectionOutput ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1500V).2174A High reliability(Adoption of HVP process).[TT2142] Adoption of MBIT process.5.63.4 On-chip damper diode. 16.03.12.82.0 2.1

Ordering number : ENN0000TT2148NPN Triple Diffused Planar Silicon TransistorTT2148Switching Regulator ApplicationsPreliminaryFeaturesPackage Dimensions High breakdown voltage and high reliability.unit : mm Fast switching speed.2022A Wide ASO.[TT2148] Adoption of MBIT process.15.63.24.814.02.01.62.00.61.01 2 31 : Base0.62 : Collec

Ordering number : ENN7215ATT2140LSNPN Triple Diffused Planar Silicon TransistorColor TV Horizontal DeflectionTT2140LSOutput ApplicationsFeatures High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Co

isc Silicon NPN Power Transistor TT2140DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Collector Saturation Voltage-: V = 3.0V(Max.)@ I = 3.15ACE(sat) CBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE