Справочник транзисторов. TT2146

 

Биполярный транзистор TT2146 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: TT2146
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 40 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 500 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
   Макcимальный постоянный ток коллектора (Ic): 7 A
   Статический коэффициент передачи тока (hfe): 20
   Корпус транзистора: TO220

 Аналоги (замена) для TT2146

 

 

TT2146 Datasheet (PDF)

 ..1. Size:1594K  sanyo
tt2188 tt2146 tt2178 tt2158.pdf

TT2146
TT2146

2003Sanyo Sales ToolSanyo Semiconductor.SPS/ADAPTOR/CHARGERDSC/PDA/B/L and LCD MonitorNB/MBWLANSPS/ADAPTOR/CHARGER10KK/5KK/5KK/MBLOCK BIP H/DLA5648 TT2188/46/94/48/58MAIN SW(SPS)TM3060B/64B/68GLA5645 A2099/C5888L5038 K2624/5/8LSMAIN LA5614M K2678LS/3491SW(ADP/CHA)

 9.1. Size:30K  sanyo
tt2142.pdf

TT2146
TT2146

Ordering number : ENN7550TT2142NPN Triple Diffused Planar Silicon TransistorTT2142Color TV Horizontal DeflectionOutput ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1500V).2174A High reliability(Adoption of HVP process).[TT2142] Adoption of MBIT process.5.63.4 On-chip damper diode. 16.03.12.82.0 2.1

 9.2. Size:34K  sanyo
tt2148.pdf

TT2146
TT2146

Ordering number : ENN0000TT2148NPN Triple Diffused Planar Silicon TransistorTT2148Switching Regulator ApplicationsPreliminaryFeaturesPackage Dimensions High breakdown voltage and high reliability.unit : mm Fast switching speed.2022A Wide ASO.[TT2148] Adoption of MBIT process.15.63.24.814.02.01.62.00.61.01 2 31 : Base0.62 : Collec

 9.3. Size:39K  sanyo
tt2140ls.pdf

TT2146
TT2146

Ordering number : ENN7215ATT2140LSNPN Triple Diffused Planar Silicon TransistorColor TV Horizontal DeflectionTT2140LSOutput ApplicationsFeatures High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Co

 9.4. Size:226K  inchange semiconductor
tt2140.pdf

TT2146
TT2146

isc Silicon NPN Power Transistor TT2140DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Collector Saturation Voltage-: V = 3.0V(Max.)@ I = 3.15ACE(sat) CBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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