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TT2178 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TT2178
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 55 W
   Tensión colector-base (Vcb): 500 V
   Tensión colector-emisor (Vce): 400 V
   Corriente del colector DC máxima (Ic): 12 A

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO3PMLH

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TT2178 Datasheet (PDF)

 ..1. Size:1594K  sanyo
tt2188 tt2146 tt2178 tt2158.pdf

TT2178
TT2178

2003Sanyo Sales ToolSanyo Semiconductor.SPS/ADAPTOR/CHARGERDSC/PDA/B/L and LCD MonitorNB/MBWLANSPS/ADAPTOR/CHARGER10KK/5KK/5KK/MBLOCK BIP H/DLA5648 TT2188/46/94/48/58MAIN SW(SPS)TM3060B/64B/68GLA5645 A2099/C5888L5038 K2624/5/8LSMAIN LA5614M K2678LS/3491SW(ADP/CHA)

 9.1. Size:41K  sanyo
tt2170ls.pdf

TT2178
TT2178

Ordering number : ENN7670TT2170LSNPN Triple Diffused Planar Silicon TransistorTT2170LSColor TV Horizontal DeflectionOutput ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1500V).2079D High reliability(Adoption of HVP process).[TT2170LS] Adoption of MBIT process.10.0 4.5 On-chip damper diode. 2.83.20.91.

 9.2. Size:33K  sanyo
tt2176.pdf

TT2178
TT2178

Ordering number : ENN7535A TT2176NPN Triple Diffused Planar Silicon TransistorTT2176Switching Regulator ApplicationsFeatures High breakdown voltage, High reliability. High-speed switching. Wide ASO. Adoption of MBIT process.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 500 VCollector

Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

 

 
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