BCM856BS-DG . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BCM856BS-DG
Código: PB*
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 65 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 2.2 pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: SOT363
Búsqueda de reemplazo de transistor bipolar BCM856BS-DG
BCM856BS-DG Datasheet (PDF)
bcm856bs bcm856bs-dg bcm856ds bcm856ds-dg.pdf
BCM856BS; BCM856BS/DGBCM856DS; BCM856DS/DGPNP/PNP matched double transistorsRev. 01 7 August 2008 Product data sheet1. Product profile1.1 General descriptionPNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plasticpackages. The transistors are fully isolated internally.Table 1. Product overviewType number Package Package configurationNexperia JEITA
bcm856bs bcm856ds.pdf
BCM856BS; BCM856BS/DGBCM856DS; BCM856DS/DGPNP/PNP matched double transistorsRev. 01 7 August 2008 Product data sheet1. Product profile1.1 General descriptionPNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plasticpackages. The transistors are fully isolated internally.Table 1. Product overviewType number Package Package configurationNXP JEITABCM
bcm856bs bcm856ds.pdf
BCM856BS; BCM856BS/DGBCM856DS; BCM856DS/DGPNP/PNP matched double transistorsRev. 01 7 August 2008 Product data sheet1. Product profile1.1 General descriptionPNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plasticpackages. The transistors are fully isolated internally.Table 1. Product overviewType number Package Package configurationNXP JEITABCM
bcm856s.pdf
BCM856SPNP Silicon AF Transistor Array Precision matched transistor pair: IC 10%453 For current mirror applications621 Low collector-emitter saturation voltage Two (galvanic) internal isolated Transistors Complementary type: BCM846S BC856S: For orientation in reel see package information below Pb-free (RoHS compliant) package Qualif
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BDY83B
History: BDY83B
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D