BCM856BS-DG . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BCM856BS-DG
Código: PB*
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 65 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 2.2 pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: SOT363
Búsqueda de reemplazo de transistor bipolar BCM856BS-DG
BCM856BS-DG Datasheet (PDF)
bcm856bs bcm856bs-dg bcm856ds bcm856ds-dg.pdf
BCM856BS; BCM856BS/DG BCM856DS; BCM856DS/DG PNP/PNP matched double transistors Rev. 01 7 August 2008 Product data sheet 1. Product profile 1.1 General description PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic packages. The transistors are fully isolated internally. Table 1. Product overview Type number Package Package configuration Nexperia JEITA
bcm856bs bcm856ds.pdf
BCM856BS; BCM856BS/DG BCM856DS; BCM856DS/DG PNP/PNP matched double transistors Rev. 01 7 August 2008 Product data sheet 1. Product profile 1.1 General description PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic packages. The transistors are fully isolated internally. Table 1. Product overview Type number Package Package configuration NXP JEITA BCM
bcm856bs bcm856ds.pdf
BCM856BS; BCM856BS/DG BCM856DS; BCM856DS/DG PNP/PNP matched double transistors Rev. 01 7 August 2008 Product data sheet 1. Product profile 1.1 General description PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic packages. The transistors are fully isolated internally. Table 1. Product overview Type number Package Package configuration NXP JEITA BCM
bcm856s.pdf
BCM856S PNP Silicon AF Transistor Array Precision matched transistor pair IC 10% 4 5 3 For current mirror applications 6 2 1 Low collector-emitter saturation voltage Two (galvanic) internal isolated Transistors Complementary type BCM846S BC856S For orientation in reel see package information below Pb-free (RoHS compliant) package Qualif
Otros transistores... BC856BM , BC857AQA , BC857BQA , BC857CQA , BC857RA , BCM53DS , BCM56DS , BCM847QAS , 2SC4793 , BCM856DS-DG , BCM857QAS , BCP51-10T , BCP51-16T , BCP51T , BCP52-10T , BCP52-16T , BCP52T .
History: 2N3999 | 2SC2977 | BDX36 | 2N1092 | 2SC1543 | 2SD1063R | NB121HY
History: 2N3999 | 2SC2977 | BDX36 | 2N1092 | 2SC1543 | 2SD1063R | NB121HY
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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