BCP53T . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BCP53T
Código: BCP53T
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.6 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 7 pF
Ganancia de corriente contínua (hfe): 63
Paquete / Cubierta: SOT223
Búsqueda de reemplazo de transistor bipolar BCP53T
BCP53T Datasheet (PDF)
bcp53t bcp53-10t bcp53-16t.pdf
BCP53T series80 V, 1 A PNP medium power transistorsRev. 2 29 April 2019 Product data sheet1. Product profile1.1. General descriptionPNP medium power transistors in a medium power SOT223 (SC73) Surface-Mounted Device(SMD) plastic package.Table 1. Product overviewType number Package NPN comlementNexperia JEDECBCP53T SOT223 SC-73 BCP56TBCP53-10T BCP56-10TBCP53-16T BCP56
bcp53t1r.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCP53T1/DPNP Silicon BCP53T1Motorola Preferred DeviceEpitaxial TransistorThis PNP Silicon Epitaxial transistor is designed for use in audio amplifierMEDIUM POWERapplications. The device is housed in the SOT-223 package which is designed forPNP SILICONmedium power surface mount applications.HIGH CURRENT High C
bcp51ta bcp5110ta bcp5116ta bcp5116tc bcp52ta bcp5210ta bcp5216ta bcp53ta bcp53qta bcp5310ta bcp5316ta bcp5316qta bcp5316tc.pdf
BCP 51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT223 Features Mechanical Data BVCEO > -45V, -60V & -80V Case: SOT223 IC = -1A High Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound; ICM = -2A Peak Pulse Current UL Flammability Rating 94V-0 2W Power Dissipation Moisture Sensitivity: Level 1 per J-STD-020 Low Sa
sbcp53t1g.pdf
BCP53 SeriesPNP SiliconEpitaxial TransistorsThis PNP Silicon Epitaxial transistor is designed for use in audioamplifier applications. The device is housed in the SOT-223 packagewhich is designed for medium power surface mount applications.http://onsemi.com High Current NPN Complement is BCP56MEDIUM POWER HIGH The SOT-223 Package can be soldered using wave or reflow
bcp53t1-d.pdf
BCP53 SeriesPNP SiliconEpitaxial TransistorsThis PNP Silicon Epitaxial transistor is designed for use in audioamplifier applications. The device is housed in the SOT-223 packagewhich is designed for medium power surface mount applications.http://onsemi.com High Current: 1.5 A NPN Complement is BCP56 MEDIUM POWER HIGH The SOT-223 Package can be soldered using wave or
bcp53t1 bcp53-10t1 bcp53-16t1.pdf
BCP53 Series,SBCP53 SeriesPNP SiliconEpitaxial TransistorsThis PNP Silicon Epitaxial transistor is designed for use in audioamplifier applications. The device is housed in the SOT-223 packagehttp://onsemi.comwhich is designed for medium power surface mount applications.MEDIUM POWER HIGH High Current: 1.5 ACURRENT SURFACE MOUNT NPN Complement is BCP56PNP TRANSISTOR
bcp53t1g bcp53-10t1g bcp53-16t1g.pdf
BCP53 SeriesPNP SiliconEpitaxial TransistorsThis PNP Silicon Epitaxial transistor is designed for use in audioamplifier applications. The device is housed in the SOT-223 packagewhich is designed for medium power surface mount applications.www.onsemi.com High Current NPN Complement is BCP56MEDIUM POWER HIGH The SOT-223 Package can be soldered using wave or reflow.
bcp53-16t1g bcp53-16t3g bcp53t1g bcp53-10t1g sbcp53-10t1g sbcp53-16t1g.pdf
BCP53 Series,SBCP53 SeriesPNP SiliconEpitaxial TransistorsThis PNP Silicon Epitaxial transistor is designed for use in audioamplifier applications. The device is housed in the SOT-223 packagehttp://onsemi.comwhich is designed for medium power surface mount applications.MEDIUM POWER HIGH High Current: 1.5 ACURRENT SURFACE MOUNT NPN Complement is BCP56PNP TRANSISTOR
bcp53t1g bcp53-16t1g bcp53-10t1g.pdf
BCP53 SeriesPNP SiliconEpitaxial TransistorsThis PNP Silicon Epitaxial transistor is designed for use in audioamplifier applications. The device is housed in the SOT-223 packagewhich is designed for medium power surface mount applications.www.onsemi.com High Current NPN Complement is BCP56MEDIUM POWER HIGH The SOT-223 Package can be soldered using wave or reflow.
bcp53t1g bcp53-16t1g bcp53-10t1g bcp53-16t3g sbcp53-16t1g sbcp53-10t1g sbcp53-10t1g nsvbcp53-16t3g.pdf
BCP53 SeriesPNP SiliconEpitaxial TransistorsThis PNP Silicon Epitaxial transistor is designed for use in audioamplifier applications. The device is housed in the SOT-223 packagewhich is designed for medium power surface mount applications.www.onsemi.com High Current NPN Complement is BCP56MEDIUM POWER HIGH The SOT-223 Package can be soldered using wave or reflow.
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: MPS-U95 | 2SB991 | FTC4081 | 2N1478 | 2SC3008 | 2SC4444
History: MPS-U95 | 2SB991 | FTC4081 | 2N1478 | 2SC3008 | 2SC4444
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050