2SA1239G Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1239G
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5 W
Tensión colector-base (Vcb): 130 V
Tensión colector-emisor (Vce): 120 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 160 MHz
Ganancia de corriente contínua (hFE): 280
Encapsulados: TO71-2
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2SA1239G datasheet
7.1. Size:354K sanyo
2sa1239.pdf 
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8.1. Size:382K sanyo
2sa1237.pdf
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8.2. Size:438K sanyo
2sa1238.pdf
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8.4. Size:103K secos
2sa1235a.pdf
2SA1235A -0.2A , -60V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Low Collector Current A Low Collector Power Dissipation L 3 3 Top View C B CLASSIFICATION OF hFE (1) 1 1 2 2 Product-Rank 2SA1235A-ME 2SA1235A-MF K E Range 150 300 250 500 D Ma
8.5. Size:313K hua-yuan
2sa1235a.pdf
DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD. TEL 86-769-5335378 86-769-5305266 FEX 86-769-5316189 SOT-23 Plastic-Encapsulate Transistors SOT 23 1. BASE 2SA1235A TRANSISTOR PNP 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 2.4 PCM 0.2 W Tamb=25 1.3 Collector current ICM -0.2 A Collector-base voltage V
8.6. Size:748K jiangsu
2sa1235a.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA1235A TRANSISTOR (PNP) SOT 23 FEATURES Low Collector Current Low Collector Power Dissipation MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -60 V CBO 3. COLLECTOR V Collector-Emitter Voltage -50 V C
8.7. Size:160K jmnic
2sa1232.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1232 DESCRIPTION With TO-3PFa package Complement to type 2SC3012 APPLICATIONS Audio frequency power amplifier. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitt
8.8. Size:294K htsemi
2sa1235a.pdf
2SA1 235A TRANSISTOR(PNP) SOT 23 FEATURES Low Collector Current Low Collector Power Dissipation MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER VCBO Collector-Base Voltage -60 V 3. COLLECTOR V Collector-Emitter Voltage -50 V CEO V Emitter-Base Voltage -6 V EBO I Collector Current -200 mA C P Collector Powe
8.10. Size:1150K kexin
2sa1235.pdf
SMD Type or SMD Type TransistICs PNP Transistors 2SA1235 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Small collector to emitter saturation voltage. 1 2 +0.1 Excelent lineary DC forward current gain. +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 Super mini package for easy mounting. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Un
8.11. Size:196K cn sptech
2sa1232r 2sa1452q 2sa1452p.pdf
SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1232 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -130V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3012 APPLICATIONS For audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -130 V CBO V Collector-
8.12. Size:221K inchange semiconductor
2sa1232.pdf
isc Silicon PNP Power Transistor 2SA1232 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -130V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3012 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
Otros transistores... 2SA1237F
, 2SA1237G
, 2SA1238
, 2SA1238E
, 2SA1238F
, 2SA1238G
, 2SA1239
, 2SA1239F
, 2N3904
, 2SA124
, 2SA1240
, 2SA1240F
, 2SA1240G
, 2SA1241
, 2SA1242
, 2SA1242O
, 2SA1242Y
.
History: BC237BP
