2SA1239G Specs and Replacement
Type Designator: 2SA1239G
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 130 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 160 MHz
Forward Current Transfer Ratio (hFE), MIN: 280
Noise Figure, dB: -
Package: TO71-2
- BJT ⓘ Cross-Reference Search
2SA1239G datasheet
7.1. Size:354K sanyo
2sa1239.pdf 
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒
8.1. Size:382K sanyo
2sa1237.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒
8.2. Size:438K sanyo
2sa1238.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒
8.4. Size:103K secos
2sa1235a.pdf
2SA1235A -0.2A , -60V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Low Collector Current A Low Collector Power Dissipation L 3 3 Top View C B CLASSIFICATION OF hFE (1) 1 1 2 2 Product-Rank 2SA1235A-ME 2SA1235A-MF K E Range 150 300 250 500 D Ma... See More ⇒
8.5. Size:313K hua-yuan
2sa1235a.pdf
DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD. TEL 86-769-5335378 86-769-5305266 FEX 86-769-5316189 SOT-23 Plastic-Encapsulate Transistors SOT 23 1. BASE 2SA1235A TRANSISTOR PNP 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 2.4 PCM 0.2 W Tamb=25 1.3 Collector current ICM -0.2 A Collector-base voltage V ... See More ⇒
8.6. Size:748K jiangsu
2sa1235a.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA1235A TRANSISTOR (PNP) SOT 23 FEATURES Low Collector Current Low Collector Power Dissipation MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -60 V CBO 3. COLLECTOR V Collector-Emitter Voltage -50 V C... See More ⇒
8.7. Size:160K jmnic
2sa1232.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1232 DESCRIPTION With TO-3PFa package Complement to type 2SC3012 APPLICATIONS Audio frequency power amplifier. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitt... See More ⇒
8.8. Size:294K htsemi
2sa1235a.pdf
2SA1 235A TRANSISTOR(PNP) SOT 23 FEATURES Low Collector Current Low Collector Power Dissipation MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER VCBO Collector-Base Voltage -60 V 3. COLLECTOR V Collector-Emitter Voltage -50 V CEO V Emitter-Base Voltage -6 V EBO I Collector Current -200 mA C P Collector Powe... See More ⇒
8.10. Size:1150K kexin
2sa1235.pdf
SMD Type or SMD Type TransistICs PNP Transistors 2SA1235 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Small collector to emitter saturation voltage. 1 2 +0.1 Excelent lineary DC forward current gain. +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 Super mini package for easy mounting. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Un... See More ⇒
8.11. Size:196K cn sptech
2sa1232r 2sa1452q 2sa1452p.pdf
SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1232 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -130V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3012 APPLICATIONS For audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -130 V CBO V Collector-... See More ⇒
8.12. Size:221K inchange semiconductor
2sa1232.pdf
isc Silicon PNP Power Transistor 2SA1232 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -130V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3012 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN... See More ⇒
Detailed specifications: 2SA1237F, 2SA1237G, 2SA1238, 2SA1238E, 2SA1238F, 2SA1238G, 2SA1239, 2SA1239F, 2N3904, 2SA124, 2SA1240, 2SA1240F, 2SA1240G, 2SA1241, 2SA1242, 2SA1242O, 2SA1242Y
Keywords - 2SA1239G pdf specs
2SA1239G cross reference
2SA1239G equivalent finder
2SA1239G pdf lookup
2SA1239G substitution
2SA1239G replacement
