PBSS4160X Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBSS4160X

Código: S41

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.5 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 180 MHz

Capacitancia de salida (Cc): 6 pF

Ganancia de corriente contínua (hFE): 170

Encapsulados: SOT89

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PBSS4160X datasheet

 ..1. Size:215K  nxp
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PBSS4160X

PBSS4160X 60 V, 1 A NPN low VCEsat BISS transistor 23 May 2017 Product data sheet 1. General description NPN low VCEsat Breakthrough in Smal Signal (BISS) transitor in a medium power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High

 6.1. Size:207K  philips
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PBSS4160X

PBSS4160DS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor Rev. 04 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. PNP/PNP complement PBSS5160DS. 1.2 Features Low collector-emitter saturation voltage VCEsat High

 6.2. Size:341K  philips
pbss4160t.pdf pdf_icon

PBSS4160X

 6.3. Size:258K  philips
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PBSS4160X

PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor Rev. 03 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC

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