PBSS5255PAPS . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PBSS5255PAPS
Código: 3N
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.37 W
Tensión colector-base (Vcb): 55 V
Tensión colector-emisor (Vce): 55 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 16 pF
Ganancia de corriente contínua (hfe): 170
Paquete / Cubierta: SOT1118D
Búsqueda de reemplazo de transistor bipolar PBSS5255PAPS
PBSS5255PAPS Datasheet (PDF)
pbss5255paps.pdf
PBSS5255PAPS55V, 2A PNP/PNP low VCEsat (BISS) double transistor11 December 2015 Product data sheet1. General descriptionPNP/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadlessmedium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plasticpackage with visible and solderable side pads.2. Features and benefits Very low collector-emitter sat
pbss5250x.pdf
DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109PBSS5250X50 V, 2 A PNP low VCEsat (BISS) transistorProduct data sheet 2004 Nov 04Supersedes data of 2003 Jun 17NXP Semiconductors Product data sheet50 V, 2 A PBSS5250XPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA SOT89 (SC-62) packageSYMBOL PARAMETER MAX. UNIT Low collector-emitter sat
pbss5250t.pdf
DISCRETE SEMICONDUCTORSDATA SHEETgeM3D088PBSS5250T50 V, 2 APNP low VCEsat (BISS) transistorProduct specification 2003 Oct 09Philips Semiconductors Product specification50 V, 2 APBSS5250TPNP low VCEsat (BISS) transistorQUICK REFERENCE DATAFEATURESSYMBOL PARAMETER MAX. UNIT Low collector-emitter saturation voltage VCEsatVCEO collector-emitter voltage -50 V
pbss5250x.pdf
DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109PBSS5250X50 V, 2 A PNP low VCEsat (BISS) transistorProduct data sheet 2004 Nov 04Supersedes data of 2003 Jun 17NXP Semiconductors Product data sheet50 V, 2 A PBSS5250XPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA SOT89 (SC-62) packageSYMBOL PARAMETER MAX. UNIT Low collector-emitter sat
pbss5250th.pdf
PBSS5250TH50 V, 2 A PNP low VCEsat (BISS) transistor9 August 2017 Product data sheet1. General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package.2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collec
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