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PDTA115EMB . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PDTA115EMB
   Material: Si
   Polaridad de transistor: PNP
   Resistencia de Entrada Base R1 = 100 kOhm
   Resistencia Base-Emisor R2 = 100 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.25 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.02 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 180 MHz
   Capacitancia de salida (Cc): 3 pF
   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: SOT883B
     - Selección de transistores por parámetros

 

PDTA115EMB Datasheet (PDF)

 ..1. Size:954K  nxp
 pdta115emb.pdf pdf_icon

PDTA115EMB

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 5.1. Size:417K  nxp
 pdta115ee pdta115eef pdta115ek pdta115em pdta115es pdta115et pdta115eu.pdf pdf_icon

PDTA115EMB

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.1. Size:183K  philips
 pdta115e series.pdf pdf_icon

PDTA115EMB

DISCRETE SEMICONDUCTORS DATA SHEETPDTA115E seriesPNP resistor-equipped transistors; R1 = 100 k, R2 = 100 kProduct data sheet 2004 Jul 30Supersedes data of 2004 May 05NXP Semiconductors Product data sheetPNP resistor-equipped transistors; PDTA115E seriesR1 = 100 k, R2 = 100 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI

 6.2. Size:139K  nxp
 pdta115eef pdta115ek pdta115es.pdf pdf_icon

PDTA115EMB

DISCRETE SEMICONDUCTORS DATA SHEETPDTA115E seriesPNP resistor-equipped transistors; R1 = 100 k, R2 = 100 kProduct data sheet 2004 Jul 30Supersedes data of 2004 May 05NXP Semiconductors Product data sheetPNP resistor-equipped transistors; PDTA115E seriesR1 = 100 k, R2 = 100 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI

MOSTRAR MÁS

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: MJE13003DI5 | PHE13003A | 2SA1166

 

 
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