PDTA115EMB Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PDTA115EMB

Material: Si

Polaridad de transistor: PNP

Resistencia de Entrada Base R1 = 100 kOhm

Resistencia Base-Emisor R2 = 100 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.25 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 0.02 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 180 MHz

Capacitancia de salida (Cc): 3 pF

Ganancia de corriente contínua (hFE): 80

Encapsulados: SOT883B

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PDTA115EMB datasheet

 ..1. Size:954K  nxp
 pdta115emb.pdf pdf_icon

PDTA115EMB

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 5.1. Size:417K  nxp
 pdta115ee pdta115eef pdta115ek pdta115em pdta115es pdta115et pdta115eu.pdf pdf_icon

PDTA115EMB

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.1. Size:183K  philips
 pdta115e series.pdf pdf_icon

PDTA115EMB

DISCRETE SEMICONDUCTORS DATA SHEET PDTA115E series PNP resistor-equipped transistors; R1 = 100 k , R2 = 100 k Product data sheet 2004 Jul 30 Supersedes data of 2004 May 05 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; PDTA115E series R1 = 100 k , R2 = 100 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNI

 6.2. Size:139K  nxp
 pdta115eef pdta115ek pdta115es.pdf pdf_icon

PDTA115EMB

DISCRETE SEMICONDUCTORS DATA SHEET PDTA115E series PNP resistor-equipped transistors; R1 = 100 k , R2 = 100 k Product data sheet 2004 Jul 30 Supersedes data of 2004 May 05 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; PDTA115E series R1 = 100 k , R2 = 100 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNI

MOSTRAR MÁS

Otros transistores... PBSS5255PAPS, PBSS5260PAPS, PBSS5350TH, PBSS5360PAS, PBSS5360X, PDTA114EQA, PDTA114TMB, PDTA114YQA, 2N2222, PDTA115TMB, PDTA123JQA, PDTA123TMB, PDTA123YMB, PDTA124EMB, PDTA124EQA, PDTA143EQA, PDTA143XQA