PDTA115EMB
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PDTA115EMB
Material: Si
Polaridad de transistor: PNP
Resistencia de Entrada Base R1 = 100 kOhm
Resistencia Base-Emisor R2 = 100 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 10
V
Corriente del colector DC máxima (Ic): 0.02
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 180
MHz
Capacitancia de salida (Cc): 3
pF
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta:
SOT883B
Búsqueda de reemplazo de transistor bipolar PDTA115EMB
PDTA115EMB
Datasheet (PDF)
..1. Size:954K nxp
pdta115emb.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
5.1. Size:417K nxp
pdta115ee pdta115eef pdta115ek pdta115em pdta115es pdta115et pdta115eu.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
6.1. Size:183K philips
pdta115e series.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPDTA115E seriesPNP resistor-equipped transistors; R1 = 100 k, R2 = 100 kProduct data sheet 2004 Jul 30Supersedes data of 2004 May 05NXP Semiconductors Product data sheetPNP resistor-equipped transistors; PDTA115E seriesR1 = 100 k, R2 = 100 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI
6.2. Size:139K nxp
pdta115eef pdta115ek pdta115es.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPDTA115E seriesPNP resistor-equipped transistors; R1 = 100 k, R2 = 100 kProduct data sheet 2004 Jul 30Supersedes data of 2004 May 05NXP Semiconductors Product data sheetPNP resistor-equipped transistors; PDTA115E seriesR1 = 100 k, R2 = 100 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI
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