PDTA143ZQA . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PDTA143ZQA

Material: Si

Polaridad de transistor: PNP

Resistencia de Entrada Base R1 = 4.7 kOhm

Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 0.1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.28 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 180 MHz

Capacitancia de salida (Cc): 3 pF

Ganancia de corriente contínua (hfe): 100

Paquete / Caja (carcasa): SOT1215

Búsqueda de reemplazo de transistor bipolar PDTA143ZQA

PDTA143ZQA Datasheet (PDF)

..1. pdta143xqa pdta123jqa pdta143zqa pdta114yqa.pdf Size:2790K _nxp

PDTA143X/123J/143Z/114YQA series50 V, 100 mA PNP resistor-equipped transistorsRev. 1 30 October 2015 Product data sheet1. Product profile1.1 General description100 mA PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.Table 1. Product overviewType

6.1. pdta143zk 3.pdf Size:55K _motorola

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTA143ZKPNP resistor-equipped transistorProduct specification 1999 May 25Supersedes data of 1998 May 18Philips Semiconductors Pr

6.2. pdta143zt 3.pdf Size:56K _motorola

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTA143ZTPNP resistor-equipped transistorProduct specification 1999 May 25Supersedes data of 1998 May 19Philips Semiconductors Pr

6.3. pdta143zt 1.pdf Size:49K _motorola

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTA143ZTPNP resistor-equipped transistorProduct specification 1997 Dec 12File under Discrete Semiconductors, SC04Philips Semicon

6.4. pdta143zk 3.pdf Size:55K _philips

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTA143ZKPNP resistor-equipped transistorProduct specification 1999 May 25Supersedes data of 1998 May 18Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143ZKFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 4.7 k and 47 kPIN DESCRIPTIONrespectively)1 base/input

6.5. pdta143zt 3.pdf Size:56K _philips

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTA143ZTPNP resistor-equipped transistorProduct specification 1999 May 25Supersedes data of 1998 May 19Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143ZTFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 4.7 k and 47 kPIN DESCRIPTIONrespectively)1 base/input

6.6. pdta143z series.pdf Size:174K _philips

DISCRETE SEMICONDUCTORS DATA SHEETPDTA143Z seriesPNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 kProduct data sheet 2004 Aug 05Supersedes data of 2003 Sep 08NXP Semiconductors Product data sheetPNP resistor-equipped transistors; PDTA143Z seriesR1 = 4.7 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT

6.7. pdta143zt 1.pdf Size:49K _philips

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTA143ZTPNP resistor-equipped transistorProduct specification 1997 Dec 12File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143ZTFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k and 47 k3handbook, 4 columnsrespectively)3

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