PDTA143ZQA Todos los transistores

 

PDTA143ZQA . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PDTA143ZQA
   Material: Si
   Polaridad de transistor: PNP
   Resistencia de Entrada Base R1 = 4.7 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.28 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 180 MHz
   Capacitancia de salida (Cc): 3 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT1215

 Búsqueda de reemplazo de transistor bipolar PDTA143ZQA

 

PDTA143ZQA Datasheet (PDF)

 ..1. Size:2790K  nxp
pdta143xqa pdta123jqa pdta143zqa pdta114yqa.pdf

PDTA143ZQA
PDTA143ZQA

PDTA143X/123J/143Z/114YQA series50 V, 100 mA PNP resistor-equipped transistorsRev. 1 30 October 2015 Product data sheet1. Product profile1.1 General description100 mA PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.Table 1. Product overviewType

 6.1. Size:55K  motorola
pdta143zk 3.pdf

PDTA143ZQA
PDTA143ZQA

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTA143ZKPNP resistor-equipped transistorProduct specification 1999 May 25Supersedes data of 1998 May 18Philips Semiconductors Pr

 6.2. Size:56K  motorola
pdta143zt 3.pdf

PDTA143ZQA
PDTA143ZQA

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTA143ZTPNP resistor-equipped transistorProduct specification 1999 May 25Supersedes data of 1998 May 19Philips Semiconductors Pr

 6.3. Size:49K  motorola
pdta143zt 1.pdf

PDTA143ZQA
PDTA143ZQA

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTA143ZTPNP resistor-equipped transistorProduct specification 1997 Dec 12File under Discrete Semiconductors, SC04Philips Semicon

 6.4. Size:55K  philips
pdta143zk 3.pdf

PDTA143ZQA
PDTA143ZQA

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTA143ZKPNP resistor-equipped transistorProduct specification 1999 May 25Supersedes data of 1998 May 18Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143ZKFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 4.7 k and 47 kPIN DESCRIPTIONrespectively)1 base/input

 6.5. Size:56K  philips
pdta143zt 3.pdf

PDTA143ZQA
PDTA143ZQA

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTA143ZTPNP resistor-equipped transistorProduct specification 1999 May 25Supersedes data of 1998 May 19Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143ZTFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 4.7 k and 47 kPIN DESCRIPTIONrespectively)1 base/input

 6.6. Size:174K  philips
pdta143z series.pdf

PDTA143ZQA
PDTA143ZQA

DISCRETE SEMICONDUCTORS DATA SHEETPDTA143Z seriesPNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 kProduct data sheet 2004 Aug 05Supersedes data of 2003 Sep 08NXP Semiconductors Product data sheetPNP resistor-equipped transistors; PDTA143Z seriesR1 = 4.7 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT

 6.7. Size:49K  philips
pdta143zt 1.pdf

PDTA143ZQA
PDTA143ZQA

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTA143ZTPNP resistor-equipped transistorProduct specification 1997 Dec 12File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143ZTFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k and 47 k3handbook, 4 columnsrespectively)3

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