PDTA143ZQA Datasheet, Equivalent, Cross Reference Search
Type Designator: PDTA143ZQA
Material of Transistor: Si
Polarity: PNP
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.1
Maximum Collector Power Dissipation (Pc): 0.28
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 180
MHz
Collector Capacitance (Cc): 3
pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT1215
PDTA143ZQA Transistor Equivalent Substitute - Cross-Reference Search
PDTA143ZQA Datasheet (PDF)
pdta143xqa pdta123jqa pdta143zqa pdta114yqa.pdf
PDTA143X/123J/143Z/114YQA series50 V, 100 mA PNP resistor-equipped transistorsRev. 1 30 October 2015 Product data sheet1. Product profile1.1 General description100 mA PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.Table 1. Product overviewType
pdta143zk 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTA143ZKPNP resistor-equipped transistorProduct specification 1999 May 25Supersedes data of 1998 May 18Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143ZKFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 4.7 k and 47 kPIN DESCRIPTIONrespectively)1 base/input
pdta143zt 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTA143ZTPNP resistor-equipped transistorProduct specification 1999 May 25Supersedes data of 1998 May 19Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143ZTFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 4.7 k and 47 kPIN DESCRIPTIONrespectively)1 base/input
pdta143zt 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTA143ZTPNP resistor-equipped transistorProduct specification 1997 Dec 12File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143ZTFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k and 47 k3handbook, 4 columnsrespectively)3
pdta143zk 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTA143ZKPNP resistor-equipped transistorProduct specification 1999 May 25Supersedes data of 1998 May 18Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143ZKFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 4.7 k and 47 kPIN DESCRIPTIONrespectively)1 base/input
pdta143z series.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPDTA143Z seriesPNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 kProduct data sheet 2004 Aug 05Supersedes data of 2003 Sep 08NXP Semiconductors Product data sheetPNP resistor-equipped transistors; PDTA143Z seriesR1 = 4.7 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT
pdta143zt 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTA143ZTPNP resistor-equipped transistorProduct specification 1999 May 25Supersedes data of 1998 May 19Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143ZTFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 4.7 k and 47 kPIN DESCRIPTIONrespectively)1 base/input
pdta143zt 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTA143ZTPNP resistor-equipped transistorProduct specification 1997 Dec 12File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143ZTFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k and 47 k3handbook, 4 columnsrespectively)3
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
