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PHPT61002NYCLH . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PHPT61002NYCLH
   Código: 1002NCC
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1.25 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 140 MHz
   Capacitancia de salida (Cc): 11 pF
   Ganancia de corriente contínua (hfe): 90
   Paquete / Cubierta: SOT669
 

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PHPT61002NYCLH Datasheet (PDF)

 ..1. Size:243K  nxp
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PHPT61002NYCLH

PHPT61002NYCLH100 V, 2 A NPN high power bipolar transistor31 March 2017 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) powerplastic package.PNP complement: PHPT61002PYCLH2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced P

 2.1. Size:283K  nxp
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PHPT61002NYCLH

PHPT61002NYC100V, 2 A NPN high power bipolar transistor9 January 2014 Product data sheet1. General descriptionNPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.PNP complement: PHPT61002PYC2. Features and benefits High thermal power dissipation capability High temperature applications up to 175 C Reduced Print

 5.1. Size:255K  nxp
 phpt61002pyclh.pdf pdf_icon

PHPT61002NYCLH

PHPT61002PYCLH100 V, 2 A PNP high power bipolar transistor13 July 2017 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) powerplastic package.NPN complement: PHPT61002NYCLH.2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C

 5.2. Size:284K  nxp
 phpt61002pyc.pdf pdf_icon

PHPT61002NYCLH

PHPT61002PYC100 V, 2 A PNP high power bipolar transistor10 January 2014 Product data sheet1. General descriptionPNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device(SMD) power plastic package.NPN complement: PHPT61002NYC.2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C

MOSTRAR MÁS

Otros transistores... PDTA123YMB , PDTA124EMB , PDTA124EQA , PDTA143EQA , PDTA143XQA , PDTA143ZQA , PDTA144EQA , PDTA144TMB , 2SA1943 , PHPT61002PYCLH , PMBT2222AM , PMBT2222AMB , PMBT2222AQA , PMBT2907AM , PMBT2907AMB , PMBT2907AQA , PMBT3904QA .

History: LDTD123YET1G | MRF10350 | BD827-25

 

 
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