2SB1329 Todos los transistores

 

2SB1329 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SB1329

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.2 W

Tensión colector-emisor (Vce): 32 V

Corriente del colector DC máxima (Ic): 1 A

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 82

Paquete / Caja (carcasa): MRT

Búsqueda de reemplazo de transistor bipolar 2SB1329

 

2SB1329 Datasheet (PDF)

..1. 2sb1329.pdf Size:195K _rohm

2SB1329
2SB1329

8.1. 2sb1324.pdf Size:85K _sanyo

2SB1329
2SB1329

8.2. 2sb1325.pdf Size:44K _sanyo

2SB1329
2SB1329

 8.3. 2sb1323.pdf Size:81K _sanyo

2SB1329
2SB1329

8.4. 2sb1386 2sb1412 2sb1326.pdf Size:107K _rohm

2SB1329
2SB1329

2SB1386 / 2SB1412 / 2SB1326 Transistors Low frequency transistor (-20V, -5A) 2SB1386 / 2SB1412 / 2SB1326 External dimensions (Unit : mm) Features 1) Low VCE(sat). 2SB1386 2SB1412VCE(sat) = -0.35V (Typ.) 2.3+0.26.50.2-0.14.5+0.2C0.5-0.15.1+0.21.5+0.2 -0.1 0.50.1(IC/IB = -4A / -0.1A) 1.60.1 -0.12) Excellent DC current gain characteristics. 3) Compleme

 8.5. 2sb1322a e.pdf Size:54K _panasonic

2SB1329
2SB1329

Transistor2SB1322ASilicon PNP epitaxial planer typeFor low-frequency power amplificationUnit: mmComplementary to 2SD1994A2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesAllowing supply with the radial taping.0.65 max.Absolute Maximum Ratings (Ta=25C)+0.1 0.450.05Parameter Symbol Ratings Unit2.5 0.5 2.5 0.5Collector to base voltage VCBO 60

8.6. 2sb1321a e.pdf Size:52K _panasonic

2SB1329
2SB1329

Transistor2SB1321ASilicon PNP epitaxial planer typeFor low-frequency output amplification and driver amplificationUnit: mmComplementary to 2SD1992A6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesAllowing supply with the radial taping.Large collector power dissipation PC. (600mW)0.65 max.+0.1 0.450.05Absolute Maximum Ratings (Ta=25C)2.5 0.5 2.5

8.7. 2sb1322a.pdf Size:70K _panasonic

2SB1329
2SB1329

Transistors2SB1322ASilicon PNP epitaxial planer typeUnit: mm2.50.11.05For low-frequency power amplification6.90.1 0.05 (1.45)0.7 4.0 0.8Complementary to 2SD1994A Features0.65 max. Allowing supply with the radial taping+0.1 0.45-0.05 Absolute Maximum Ratings Ta = 25C2.50.5 2.50.51 2 3Parameter Symbol Rating UnitCollector to base voltage VCBO -

8.8. 2sb1320a e.pdf Size:56K _panasonic

2SB1329
2SB1329

Transistor2SB1320ASilicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SD1991A6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesHigh foward current transfer ratio hFE.Allowing supply with the radial taping.0.65 max.+0.1 0.450.05Absolute Maximum Ratings (Ta=25C)2.5 0.5 2.5 0.5Parameter Symbol Ratings Unit1 2 3C

8.9. 2sb1321a.pdf Size:68K _panasonic

2SB1329
2SB1329

Transistors2SB1321ASilicon PNP epitaxial planer typeUnit: mm6.90.1 1.05 2.50.1For general amplification0.05 (1.45)0.7 4.00.8Complementary to 2SD1992A Features0.65 max. Large collector power dissipation PC (600 mW) Allowing supply with the radial taping+0.1 0.45-0.052.50.5 2.50.5 Absolute Maximum Ratings Ta = 25C1 2 3Parameter Symbol Rating

8.10. 2sb1320.pdf Size:73K _panasonic

2SB1329
2SB1329

Transistors2SB1320ASilicon PNP epitaxial planer typeUnit: mmFor general amplification6.90.1 1.05 2.50.10.05 (1.45)0.7 4.00.8Complementary to 2SD1991A Features0.65 max. High forward current transfer ratio hFE Allowing supply with the radial taping+0.1 0.45-0.052.50.5 2.50.5 Absolute Maximum Ratings Ta = 25C1 2 3Parameter Symbol Rating Unit

8.11. 2sb1322a.pdf Size:78K _secos

2SB1329

2SB1322A -1A , -60V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES G H Allow Supply with The Radial Taping EmitterCollectorBase JA DCLASSIFICATION OF hFE (1) Millimeter REF.Min. Max.Product-Rank 2SB1322A-Q 2SB1322A-R 2SB1322A-SBA 4.40 4.70

8.12. 2sb1324.pdf Size:1011K _kexin

2SB1329
2SB1329

SMD Type TransistorsPNP Transistors2SB13241.70 0.1 Features Contains diode between collector and emitter. Low saturation voltage.Collector Large current capacity.0.42 0.10.46 0.1 Complementary to 2SD1998 Base1.Base2.CollectorRBE3.EmitterEmitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage V

8.13. 2sb1325.pdf Size:904K _kexin

2SB1329
2SB1329

SMD Type TransistorsPNP Transistors2SB13251.70 0.1 Features Contains diode between collector and emitter. Low saturation voltage.Collector Large current capacity.0.42 0.10.46 0.1 Complementary to 2SD1999 Base1.Base2.CollectorRBE3.EmitterEmitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage V

8.14. 2sb1323.pdf Size:1029K _kexin

2SB1329
2SB1329

SMD Type TransistorsPNP Transistors2SB13231.70 0.1 Features Contains diode between collector and emitter. Low saturation voltage.0.42 0.10.46 0.1 Large current capacity. Complementary to 2SD19971.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Vo

Otros transistores... BC507FA , BC507FB , BC508 , BC508A , BC508B , BC508C , BC508F , BC508FA , 2SA1943 , BC508FC , BC509 , BC509B , BC509C , BC509F , BC509FB , BC509FC , BC510 .

 

 
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