2SA1242O Todos los transistores

 7.1. Size:212K  toshiba
 2sa1242.pdf

2SA1242 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1242 Strobe Flash Applications Unit mm Medium Power Amplifier Applications Excellent hFE linearity h = 100 to 320 (V = -2 V, I = -0.5 A) FE (1) CE C h = 70 (min) (V = -2 V, I = -4 A) FE (2) CE C Low collector saturation voltage V = -1.0 V (max) (I = -4 A, I = -0.1 A) CE (sat) C B

 7.2. Size:185K  lge
 2sa1242.pdf

2SA1242(PNP) TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Strobe Flash Applications Medium Power Amplifier Applications Excellent hFE linearity hFE (1) = 100 to 320 (VCE = -2 V, IC = -0.5 A) hFE (2) = 70 (min) (VCE = -2 V, IC = -4 A) TO-252-2L Low collector saturation voltage VCE (sat) = -1.0 V (max) (IC = -4 A, IB = -0.1

 7.3. Size:218K  inchange semiconductor
 2sa1242.pdf

isc Silicon PNP Power Transistor 2SA1242 DESCRIPTION h =100-320(I = -0.5A; V = -2V) FE C CE h =70(Min)(I = -4A; V = -2V) FE C CE Low Collector-Emitter Saturation Voltage- V )= -1.0V(Max)( I = -4A; I = -0.1A) CE(sat C B Power Dissipation- High P = 10W@T =25 ,P = 10W@Ta=25 C C C Minimum Lot-to-Lot variations for robust device performance and reliable operation