2SA1242O Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA1242O
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 120 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 62 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO202
2SA1242O Transistor Equivalent Substitute - Cross-Reference Search
2SA1242O Datasheet (PDF)
2sa1242.pdf
2SA1242 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1242 Strobe Flash Applications Unit: mm Medium Power Amplifier Applications Excellent hFE linearity : h = 100 to 320 (V = -2 V, I = -0.5 A) FE (1) CE C: h = 70 (min) (V = -2 V, I = -4 A) FE (2) CE C Low collector saturation voltage : V = -1.0 V (max) (I = -4 A, I = -0.1 A) CE (sat) C B
2sa1242.pdf
2SA1242(PNP)TO-251/TO-252-2L TransistorTO-2511. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Strobe Flash Applications Medium Power Amplifier Applications Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = -2 V, IC = -0.5 A) : hFE (2) = 70 (min) (VCE = -2 V, IC = -4 A) TO-252-2L Low collector saturation voltage : VCE (sat) = -1.0 V (max) (IC = -4 A, IB = -0.1
2sa1242.pdf
isc Silicon PNP Power Transistor 2SA1242DESCRIPTIONh =100-320(I = -0.5A; V = -2V)FE C CEh =70(Min)(I = -4A; V = -2V)FE C CELow Collector-Emitter Saturation Voltage-: V )= -1.0V(Max)( I = -4A; I = -0.1A)CE(sat C B Power Dissipation-High: P = 10W@T =25,P = 10W@Ta=25C C CMinimum Lot-to-Lot variations for robust device performanceand reliable operation
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
