MMBT3906L3
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBT3906L3
Código: 2A*
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15
W
Tensión colector-base (Vcb): 40
V
Tensión colector-emisor (Vce): 40
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.2
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250
MHz
Capacitancia de salida (Cc): 4.5
pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta:
DFN1006-3
Búsqueda de reemplazo de transistor bipolar MMBT3906L3
MMBT3906L3
Datasheet (PDF)
..1. Size:453K mcc
mmbt3906l3.pdf
MMBT3906L3Features Epitaxial Planar Die Construction Halogen Free Available Upon Request By Adding Suffix "-HF"PNP Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingGeneral Purpose Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSAmplifierCompliant. See Ordering Information)Maximum Ratings @ 25C Unless Otherwise Specified
5.1. Size:403K diodes
mmbt3906lp.pdf
MMBT3906LP 40V PNP SMALL SIGNAL TRANSISTOR IN DFN1006 Features Mechanical Data BVCEO > -40V Case: X1-DFN1006-3 IC = -200mA High Collector Current Case Material: Molded Plastic, "Green" Molding Compound. PD = 1000mW Power Dissipation UL Flammability Classification Rating 94V-0 0.60mm2 Package Footprint, 13 times Smaller than SOT23 Moisture Sensitivity: Lev
5.2. Size:120K onsemi
mmbt3906lt1-d.pdf
MMBT3906LT1GGeneral Purpose TransistorPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO -40 Vdc2Collector-Base Voltage VCBO -40 VdcEMITTEREmitter-Base Voltage VEBO -5.0 VdcCollector Current - Continuous IC -200 mAdc
5.3. Size:125K onsemi
mmbt3906l smmbt3906l.pdf
MMBT3906L, SMMBT3906LGeneral Purpose TransistorPNP SiliconFeatures S Prefix for Automotive and Other Applications Requiring Uniquehttp://onsemi.comSite and Control Change Requirements; AEC-Q101 Qualified andPPAP CapableCOLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3Compliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERColl
5.4. Size:128K onsemi
mmbt3906lt1g.pdf
MMBT3906L, SMMBT3906LGeneral Purpose TransistorPNP SiliconFeatures AEC-Q101 Qualified and PPAP Capablehttp://onsemi.com S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change RequirementsCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTER
5.5. Size:1670K lge
mmbt3906lt1.pdf
MMBT3906LT1 PNP General Purpose Transistor1. BASE 2. EMITTER3. COLLECTORFEATURES A SOT-23 Epitaxial planar die construction. Dim Min MaxA 2.70 3.10E Complementary NPN type available B 1.10 1.50K BC 1.0 Typical(MMBT3904). D 0.4 TypicalE 0.35 0.48J Collector Current Capability ICM =-200mA. DG 1.80 2.00GH 0.02 0.1 Low Voltage(Max:-40V).J 0.1 Typi
5.6. Size:355K willas
mmbt3906lt1.pdf
FM120-M WILLASTHRUMMBT3906LT1General Purpose BARRIER RECTIFIERS -20V- 200VTransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKYSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123HPNP Silicon Low profile surface mounted application in order to
5.7. Size:813K shenzhen
mmbt3906lt1.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR ( PNP) FEATURES As complementary type, the NPN transistor MMBT3904LT1 is Recommended Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collecto
5.8. Size:1218K first silicon
mmbt3906ltg.pdf
MMBT3906LTGGeneral Purpose TransistorsPackage outlineFeatures We declare that the material of product compliance with RoHSrequirements.3Ordering Information1Device Marking Shipping2MMBT3906LTG 2A 3000/Tape & ReelSOT23Maximum Ratings3Rating Symbol Value UnitCOLLECTORCollector-Emitter Voltage VCEO -40 Vdc1Collector-Base Voltage VCBO -40 VdcBASEEmitt
5.9. Size:1191K wpmtek
mmbt3906l mmbt3906h.pdf
Integrated inOVP&OCP productsproviderMMBT3906SOT-23 Plastic-Encapsulate TransistorsSOT-23 Features MMBT3904 ; Complementary to MMBT3904 200mW; Power Dissipation of 200mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package
5.10. Size:540K cn yfw
mmbt3906 mmbt3906l mmbt3906h.pdf
MMBT3906 SOT-23 PNP Transistors32 1.Base2.Emitter1 3.CollectorFeatures Simplified outline(SOT-23) Complementary to MMBT3904 Marking: 2AAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -40 VEmitter - Base Voltage VEBO -5Collector Current - Continuous IC -0.2 ACollector Power D
5.11. Size:942K cn zre
mmbt3906l mmbt3906h.pdf
MMBT3906 TRANSISTOR(PNP) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBT3904 ; Complementary to MMBT3904 200mW; Power Dissipation of 200mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Pack
5.12. Size:2543K cn yfsemi
mmbt3906l mmbt3906h.pdf
YFSEMI ELECTRONSOT-23 Plastic-Encapsulate Transistors MMBT3906 TRANSISTOR (PNP) SOT23 FEATURES As complementary type, the NPN transistor MMBT3904 is Recommended Epitaxial planar die construction 1. BASE MARKING: 2A 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -
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