MMBT3906L3 Datasheet, Equivalent, Cross Reference Search

MMBT3906L3 Transistor Equivalent Substitute - Cross-Reference Search

MMBT3906L3 Datasheet (PDF)

..1. mmbt3906l3.pdf Size:453K _mcc

MMBT3906L3Features Epitaxial Planar Die Construction Halogen Free Available Upon Request By Adding Suffix "-HF"PNP Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingGeneral Purpose Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSAmplifierCompliant. See Ordering Information)Maximum Ratings @ 25C Unless Otherwise Specified

5.1. mmbt3906lp.pdf Size:403K _diodes

MMBT3906LP 40V PNP SMALL SIGNAL TRANSISTOR IN DFN1006 Features Mechanical Data BVCEO > -40V Case: X1-DFN1006-3 IC = -200mA High Collector Current Case Material: Molded Plastic, "Green" Molding Compound. PD = 1000mW Power Dissipation UL Flammability Classification Rating 94V-0 0.60mm2 Package Footprint, 13 times Smaller than SOT23 Moisture Sensitivity: Lev

5.2. mmbt3906l smmbt3906l.pdf Size:125K _onsemi

MMBT3906L, SMMBT3906LGeneral Purpose TransistorPNP SiliconFeatures S Prefix for Automotive and Other Applications Requiring Uniquehttp://onsemi.comSite and Control Change Requirements; AEC-Q101 Qualified andPPAP CapableCOLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3Compliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERColl

 5.3. mmbt3906lt1g.pdf Size:128K _onsemi

MMBT3906L, SMMBT3906LGeneral Purpose TransistorPNP SiliconFeatures AEC-Q101 Qualified and PPAP Capablehttp://onsemi.com S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change RequirementsCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTER

5.4. mmbt3906lt1-d.pdf Size:120K _onsemi

MMBT3906LT1GGeneral Purpose TransistorPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO -40 Vdc2Collector-Base Voltage VCBO -40 VdcEMITTEREmitter-Base Voltage VEBO -5.0 VdcCollector Current - Continuous IC -200 mAdc

 5.5. mmbt3906lt1.pdf Size:1670K _lge

MMBT3906LT1 PNP General Purpose Transistor1. BASE 2. EMITTER3. COLLECTORFEATURES A SOT-23 Epitaxial planar die construction. Dim Min MaxA 2.70 3.10E Complementary NPN type available B 1.10 1.50K BC 1.0 Typical(MMBT3904). D 0.4 TypicalE 0.35 0.48J Collector Current Capability ICM =-200mA. DG 1.80 2.00GH 0.02 0.1 Low Voltage(Max:-40V).J 0.1 Typi

5.6. mmbt3906lt1.pdf Size:355K _willas

FM120-M WILLASTHRUMMBT3906LT1General Purpose BARRIER RECTIFIERS -20V- 200VTransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKYSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123HPNP Silicon Low profile surface mounted application in order to

5.7. mmbt3906lt1.pdf Size:813K _shenzhen

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR ( PNP) FEATURES As complementary type, the NPN transistor MMBT3904LT1 is Recommended Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collecto

5.8. mmbt3906ltg.pdf Size:1218K _first_silicon

MMBT3906LTGGeneral Purpose TransistorsPackage outlineFeatures We declare that the material of product compliance with RoHSrequirements.3Ordering Information1Device Marking Shipping2MMBT3906LTG 2A 3000/Tape & ReelSOT23Maximum Ratings3Rating Symbol Value UnitCOLLECTORCollector-Emitter Voltage VCEO -40 Vdc1Collector-Base Voltage VCBO -40 VdcBASEEmitt

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