2222A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOT 2222ANPN-TRANSISTORNPN NPN Plastic-Encapsulate Transistors SMDHigh breakdown voltage2222ALow collector-emitter saturation voltageTransistor Polarity: NPNTransistor pinout: BECMMBT2222ASOT-23 PackageMarking Code: 1PInner circuit 2222A Series

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby P2N2222A/DAmplifier TransistorsNPN SiliconP2N2222ACOLLECTOR12BASE3EMITTERMAXIMUM RATINGSRating Symbol Value Unit12CollectorEmitter Voltage VCEO 40 Vdc 3CollectorBase Voltage VCBO 75 VdcCASE 2904, STYLE 17EmitterBase Voltage VEBO 6.0 VdcTO92 (TO226AA)Collector Current Conti

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT2222AWT1/DPreliminary InformationMMBT2222AWT1General Purpose TransistorMotorola Preferred DeviceNPN SiliconThese transistors are designed for general purpose amplifier applica-tions. They are housed in the SOT323/SC70 package which isdesigned for low power surface mount applications.COLLECTOR3311

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby PZT2222AT1/DNPN Silicon PlanarPZT2222AT1Epitaxial TransistorMotorola Preferred DeviceThis NPN Silicon Epitaxial transistor is designed for use in linear and switchingapplications. The device is housed in the SOT-223 package which is designed formedium power surface mount applications.SOT-223 PACKAGE PNP Complem

PMBT2222; PMBT2222ANPN switching transistorsRev. 6 12 November 2010 Product data sheet1. Product profile1.1 General descriptionNPN switching transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product overviewType number Package PNP complementNXP JEDECPMBT2222 SOT23 TO-236AB PMBT2907PMBT2222A PMBT2907A1.2 Features and benefi

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D087PZT2222ANPN switching transistor1999 Apr 14Product specificationSupersedes data of 1997 Jun 02Philips Semiconductors Product specificationNPN switching transistor PZT2222AFEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2, 4 collectorAPPLICATIONS3 emitter

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D187PMST2222; PMST2222ANPN switching transistors1999 Apr 22Product specificationSupersedes data of 1997 Jul 14Philips Semiconductors Product specificationNPN switching transistors PMST2222; PMST2222AFEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emitterAPPLICATIO

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PMBT2222; PMBT2222ANPN switching transistors1999 Apr 27Product specificationSupersedes data of 1997 Sep 09Philips Semiconductors Product specificationNPN switching transistors PMBT2222; PMBT2222AFEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emitterAPPLICATIO

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109PXT2222ANPN switching transistor1999 Apr 14Product specificationSupersedes data of 1997 May 05Philips Semiconductors Product specificationNPN switching transistor PXT2222AFEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 emitter2 collectorAPPLICATIONS3 base Gen

DISCRETE SEMICONDUCTORSDATA SHEETM3D1252N2222; 2N2222ANPN switching transistors1997 May 29Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN switching transistors 2N2222; 2N2222AFEATURES PINNING High current (max. 800 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 emitte

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109PXT2222ANPN switching transistorProduct data sheet 2004 Nov 22Supersedes data of 1999 Apr 14NXP Semiconductors Product data sheetNPN switching transistor PXT2222AFEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 emitter2 collectorAPPLICATIONS3 base General pu

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PH2222ANPN switching transistor1999 Apr 27Product specificationSupersedes data of 1997 Sep 04Philips Semiconductors Product specificationNPN switching transistor PH2222AFEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 emitter2 baseAPPLICATIONS3 collector Switc

DISCRETE SEMICONDUCTORSDATA SHEETk, halfpageM3D088MMBT2222ANPN switching transistorProduct specification 2000 Apr 11Philips Semiconductors Product specificationNPN switching transistor MMBT2222AFEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emitterAPPLICATIONS3 collector Switching and linear amplification.

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PN2222ANPN switching transistor1999 May 21Product specificationSupersedes data of 1997 May 05Philips Semiconductors Product specificationNPN switching transistor PN2222AFEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 collector2 baseAPPLICATIONS3 emitter Gener

DISCRETE SEMICONDUCTORS DATA SHEEThandbook, halfpageM3D087PZT2222ANPN switching transistorProduct data sheet 1999 Apr 14Supersedes data of 1997 Jun 02 NXP Semiconductors Product data sheetNPN switching transistor PZT2222AFEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2, 4 collectorAPPLICATIONS3 emitter Swi

2N2222AHRHi-Rel 40 V, 0.8 A NPN transistorDatasheet - production dataFeaturesParameter ESCC JANS12 BVCEO min 40 V 50 V3IC (max) 0.8 A TO-1833hFE at 10 V - 150 mA 10041122 Hermetic packagesLCC-3UB ESCC and JANS qualifiedPin 4 in UB is connected to the metallic lid. Up to 100 krad(Si) low dose rateeDescriptionFigure 1. Internal schematic

PN2222ASMALL SIGNAL NPN TRANSISTORPRELIMINARY DATAOrdering Code Marking Package / ShipmentPN2222A PN2222A TO-92 / BulkPN2222A-AP PN2222A TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPNTRANSISTOR TO-92 PACKAGE SUITABLE FORTHROUGH-HOLE PCB ASSEMBLY THE PNP COMPLEMENTARY TYPE ISPN2907ATO-92 TO-92APPLICATIONS Bulk Ammopack WELL SUITABLE FOR TV AND HOMEAPPLIANCE EQU

STF2222ASMALL SIGNAL NPN TRANSISTORPRELIMINARY DATAType MarkingSTF2222A 20F SILICON EPITAXIAL PLANAR NPNTRANSISTOR MINIATURE SOT-89 PLASTIC PACKAGEFOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE ISSTF2907AAPPLICATIONS SOT-89 WELL SUITABLE FOR PORTABLEEQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITHHIGH GAIN AND LOW SATURATIONVOLTAG

2N2219A2N2222AHIGH SPEED SWITCHESPRELIMINARY DATADESCRIPTION The 2N2219A and 2N2222A are silicon PlanarEpitaxial NPN transistors in Jedec TO-39 (for2N2219A) and in Jedec TO-18 (for 2N2222A)metal case. They are designed for high speedswitching application at collector current up to500mA, and feature useful current gain over awide range of collector current, low leakage

SO2222SO2222ASMALL SIGNAL NPN TRANSISTORSType MarkingSO2222 N13SO2222A N20 SILICON EPITAXIAL PLANAR NPNTRANSISTORS MINIATURE PLASTIC PACKAGE FOR 2APPLICATION IN SURFACE MOUNTING3CIRCUITS1 MEDIUM CURRENT AF AMPLIFICATIONAND SWITCHING PNP COMPLEMENTS ARE RESPECTIVELYSOT-23SO2907 AND SO2907AINTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter V

2N2219A2N2222AHIGH SPEED SWITCHESPRELIMINARY DATADESCRIPTION The 2N2219A and 2N2222A are silicon PlanarEpitaxial NPN transistors in Jedec TO-39 (for2N2219A) and in Jedec TO-18 (for 2N2222A)metal case. They are designed for high speedswitching application at collector current up to500mA, and feature useful current gain over awide range of collector current, low leakage

SO2222AWSMALL SIGNAL NPN TRANSISTORPRELIMINARY DATAType MarkingSO2222AW 20W SILICON EPITAXIAL PLANAR NPNTRANSISTOR MINIATURE SOT-323 PLASTIC PACKAGEFOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE ISSO2907AWAPPLICATIONS SOT-323 WELL SUITABLE FOR PORTABLEEQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITHHIGH GAIN AND LOW SATURATIONVOLT

MMBT2222ASMALL SIGNAL NPN TRANSISTORPRELIMINARY DATAType MarkingMMBT2222A M22 SILICON EPITAXIAL PLANAR NPNTRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGEFOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE ISMMBT2907AAPPLICATIONS SOT-23 WELL SUITABLE FOR PORTABLEEQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITHHIGH GAIN AND LOW SATURATIONVOL

STZT2222ASMALL SIGNAL NPN TRANSISTORPRELIMINARY DATAType MarkingSTZT2222A N22A SILICON EPITAXIAL PLANAR NPNTRANSISTOR SOT-223 PLASTIC PACKAGE FOR 2SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING3 THE PNP COMPLEMENTARY TYPE IS 21STZT2907AAPPLICATIONS SOT-223 WELL SUITABLE FOR SMD MOTHERBOARD ASSEMBLY SMALL LOAD SWITCH TRANSISTOR WITHHIGH GAIN AND LOW SAT

SO2222ASMALL SIGNAL NPN TRANSISTORPRELIMINARY DATAType MarkingSO2222A N20 SILICON EPITAXIAL PLANAR NPNTRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGEFOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE ISSO2907AAPPLICATIONS SOT-23 WELL SUITABLE FOR PORTABLEEQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITHHIGH GAIN AND LOW SATURATIONVOLTAGE

May 2006KST2222AtmNPN Epitaxial Silicon TransistorGeneral Purpose TransistorMarking3 1P2SOT-2311. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 75 VVCEO Collector-Emitter Voltage 40 VVEBO Emitter-Base Voltage 6 VIC Collector Current 600 mAPC Collector Power Dissipa

July 2006KSP2222AtmNPN General Purpose AmplifierFeatures Collector-Emitter Voltage: VCEO= 40V Collector Power Dissipation: PC (max)=625mW Available as PN2222A TO-921 2 31. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 75 VVCEO Collector-Emitter Voltage 40 VVEB

September 2008MMBT2222ATNPN Epitaxial Silicon TransistorFeaturesC General purpose amplifier transistor.E Ultra-Small Surface Mount Package for all types.B General purpose switching & amplification application Marking : A02 SOT-523FAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitVCBO Collector-Base Voltage 75 VVCEO Colle

MMBT2222AKNPN Epitaxial Silicon TransistorGeneral Purpose TransistorMarking31PK2SOT-2311. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 75 VVCEO Collector-Emitter Voltage 40 VVEBO Emitter-Base Voltage 6 VIC Collector Current 600 mAPC Collector Power Dissipation 350 mW

August 2010PN2222A / MMBT2222A / PZT2222ANPN General Purpose AmplifierFeatures This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from process 19.PN2222A MMBT2222A PZT2222ACCEECBTO-92 SOT-23 SOT-223BMark:1PEBCAbsolute Maximum Ratings * Ta = 25C unless otherwise noted Symbol Parameter Value U

PN2222A MMBT2222A PZT2222ACCEECBTO-92 SOT-23 SOT-223BMark:1PEBCNPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from process 19.Absolute Maximum Ratings * Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VVCBO Collecto

FMB2222AFFB2222A MMPQ2222AB4E2C2E4B2 B3E1E3C1 B2C1E2B1E1C4C4C2B2C3SC70-6B1E2 C3Mark: .1Ppin #1 E1 C2pin #1 B1C2SOIC-16C1NOTE: The pinouts are symmetrical; pin 1 and pinC1Mark:SuperSOT-6 pin #14 are interchangeable. Units inside the carrier canMMPQ2222AMark: .1Pbe of either orientation and will not affect thefunctionality

PN2222A MMBT2222A PZT2222ACCEECC TO-92BB BSOT-23ESOT-223Mark: 1PNPN General Purpose AmplifierThis device is for use as a medium power amplifier andswitch requiring collector currents up to 500 mA. Sourcedfrom Process 19.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VVCBO Collector-

May 2010FJX2222ANPN Epitaxial Silicon TransistorFeatures General Purpose Transistor Collector-Emitter Voltage: VCEO = 40V Collector Dissipation: PC (max) = 325mW3MarkingS1P21SOT-3231. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 75 VVCEO Collector-Emitter V

PMBT2222AYS40 V, 600 mA, double NPN switching transistor24 June 2015 Product data sheet1. General descriptionDouble NPN switching transistor in a very small SOT363 (TSSOP6) Surface-MountedDevice (SMD) plastic package.Double PNP complement: PMBT2907AYS2. Features and benefits Double general-purpose switching transistor High current (max. 600 mA) Voltage max. 40 V

PMBT2222; PMBT2222ANPN switching transistorsRev. 6 12 November 2010 Product data sheet1. Product profile1.1 General descriptionNPN switching transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product overviewType number Package PNP complementNXP JEDECPMBT2222 SOT23 TO-236AB PMBT2907PMBT2222A PMBT2907A1.2 Features and benefi

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PMBT2222AQA40 V, 600 mA NPN switching transistor21 September 2018 Product data sheet1. General descriptionNPN switching transistor in an ultra small DFN1010D-3 (SOT1215) leadless Surface-MountedDevice (SMD) plastic package with visible and solderable side pads.PNP complement: PMBT2907AQA2. Features and benefits High current (max. 600 mA) Low voltage (max. 40V) Leadl

PXT2222ANPN switching transistors2 April 2014 Product data sheet1. General descriptionNPN switching transistor in a medium power flat lead SOT89 (SC-62/TO-243) Surface-Mounted Device (SMD) plastic package.PNP complement: PXT2907A2. Features and benefits High current: max. 600 mA Low voltage: max. 40 V3. Applications Switching and linear amplification4. Quick ref

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PMBT2222AMB40 V, 600 mA NPN switching transistor21 September 2018 Product data sheet1. General descriptionNPN switching transistor in an ultra small DFN1006B-3 (SOT883B) leadless Surface-MountedDevice (SMD) plastic package.PNP complement: PMBT2907AMB2. Features and benefits High current (max. 600 mA) Low voltage (max. 40V) Leadless ultra small SMD plastic package

PMBT2222AM40 V, 600 mA NPN switching transistor21 September 2018 Product data sheet1. General descriptionNPN switching transistor in an ultra small DFN1006-3 (SOT883) leadless Surface-Mounted Device(SMD) plastic package.PNP complement: PMBT2907AM2. Features and benefits High current (max. 600 mA) Low voltage (max. 40V) Leadless ultra small SMD plastic package L

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

KSP2222A NPN EPITAXIAL SILICON TRANSISTORGENERAL PURPOSE TRANSISTORTO-92 Collector-Emitter Voltage: VCEO= 40V Collector Dissipation: PC(max)=625mWABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 70 VCollector-Emitter Voltage VCEO 40 VEmitter-Base Voltage VEBO 6 VCollector Current IC 600 mACollector Dissipation PC 625 m

NPN Silicon Switching Transistor SXT 2222 A High current gain: 0.1 mA to 500 mA Low collector-emitter saturation voltageType Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3SXT 2222 A 2P Q68000-A8330 B C E SOT-89Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE0 40 VCollector-base voltage VCB0 75Emitter-base voltage VEB0 6Collec

UMT2222ADatasheetNPN Medium Power Transistor(Switching)lOutlinel SOT-323 Parameter Value SC-70 VCEO40VIC600mAUMT3lFeatures lInner circuitl l1)BVCEO40V(IC=10mA)2)Complements the UMT2907AlApplicationlAUDIO FREQUENCY SMALL SIGNAL AMPLIFIER

SST2222A HZGDatasheetNPN Medium Power Transistor(Switching)AEC-Q101 QualifiedlOutlinel SOT-23 Parameter Value VCEO40VIC600mASST3lFeatures lInner circuitl l1)BVCEO40V(IC=10mA)2)Complements the SST2907A HZGlApplicationlAUDIO FREQUENCY SMALL SIGNAL AMPLIFIER

UMT2222A / SST2222A / MMST2222A Transistors NPN Medium Power Transistor (Switching) UMT2222A / SST2222A / MMST2222A Features Dimensions (Unit : mm) 1) BVCEO > 40V (IC=10mA) UMT2222A2) Complements the UMT2907A / SST2907A / MMST2907A. (1) Emitter(2) BaseROHM : UMT3EIAJ : SC-70 (3) CollectorSOT-323 Package, marking, and packaging specifications SST2222APart No. U

CMPT2222AEwww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMPT2222AE is an Enhanced version of the CMPT2222A NPN Switching transistor in a SOT-23 surface mount package, designed for switching applications, interface circuit and driver circuit applications. MARKING CODE: C1PEFEATURED ENHANCED SPECIFICATIONS

CMUT2222Awww.centralsemi.comSURFACE MOUNTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMUT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in an ULTRAmini surface mount package, designed for small signal general purpose and switching applications. MARKING CODE: PC1SOT-523 CASEMAXIMUM RATINGS: (TA=25C

CMPT2222Awww.centralsemi.comSURFACE MOUNTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMPT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal, general purpose and switching applications.MARKING CODE: C1PSOT-23 CASEMAXIMUM RATINGS: (TA=25C) SYMBOL UNITSC

CMLT2222AGwww.centralsemi.comSURFACE MOUNT SILICONDESCRIPTION:DUAL NPN TRANSISTORThe CENTRAL SEMICONDUCTOR CMLT2222AG consists of two (2) isolated 2222A NPN silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface mount package. These devices have been designed for small signal general purpose and switching applications.MAR

CMKT2222ASURFACE MOUNTwww.centralsemi.comDUAL NPN SMALL SIGNALDESCRIPTION:SILICON SWITCHINGThe CENTRAL SEMICONDUCTOR CMKT2222A TRANSISTORSconsists of two individually isolated 2222A NPN silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-363 surface mount package. This ULTRAmini device has been designed for small signal general

DATA SHEET2N2221A 2N2222A NPN SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221A, 2N2222A types are Silicon NPN Planar Epitaxial Transistors designed for small signal general purpose and switching applications. MAXIMUM RATINGS: (TA=25C) SYMBOL UNITS Collector-Base Voltage VCBO 75 VCollector-Emitter Voltage VCEO 40 VEmitter-Base Voltage

CMXT2222A www.centralsemi.comSURFACE MOUNTDUAL NPNDESCRIPTION:SILICON TRANSISTORSThe CENTRAL SEMICONDUCTOR CMXT2222A type is a dual NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a SUPERmini surface mount package, and designed for small signal general purpose and switching applications.MARKING CODE: X1PSOT-26 CASEMAXIMUM RATIN

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MMST2222A 40V NPN SMALL SIGNAL TRANSISTOR IN SOT323 Features Mechanical Data BVCEO > 40V Case: SOT323 IC = 600mA Collector Current Case Material: Molded Plastic. Green Molding Compound; Epitaxial Planar Die Construction UL Flammability Rating 94V-0 Ultra-Small Surface Mount Package Moisture Sensitivity: Level 1 per J-STD-020 Complementary PNP

MMBT2222AT 40V NPN SMALL SIGNAL TRANSISTOR IN SOT523 Features Mechanical Data BVCEO > 40V Case: SOT523 Case Material: Molded Plastic. Green Molding Compound. IC = 600mA Collector Current UL Flammability Rating 94V-0 Epitaxial Planar Die Construction Moisture Sensitivity: Level 1 per J-STD-020 Ultra-Small Surface Mount Package Terminals:

MMBT2222ALP440V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Low Collector-Emitter Saturation Voltage, VCE(sat) Case: X2-DFN1006-3 Case Material: Molded Plastic, "Green" Molding Compound. Ultra-Small Leadless Surface Mount Package UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Moistu

DZT2222A NPN SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Type Available (DZT2907A) 32 Ideally Suited for Automated Assembly Processes 1 Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) 4 SOT-223 Mechanical Data COLLECTOR

MMBT2222A 40V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Complementary PNP Type: MMBT2907A Case Material: Molded Plastic, Green Molding Compound; Ideal for Low Power Amplification and Switching UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 &

MMDT2222A DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-363 C2 B1 E1 Complementary PNP Type Available (MMDT2907A) Dim Min Max Lead Free/RoHS Compliant (Note 2) A 0.10 0.30 B C "Green" Device (Note 3 and 4) B 1.15 1.35 E2 B2 C1Mechanical Data C 2.00 2.20 D 0.65 Nominal Case: SOT-363 H Ca

DXT2222A 40V NPN SURFACE MOUNT TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > 40V Case: SOT89 IC = 600mA High Collector Current Case Material: Molded Plastic, Green Molding Compound; Complementary PNP Type: DXT2907A UL Flammability Rating 94V-0 Ideal for Medium Power Switching or Amplification Applications Moisture Sensitivity: Level 1 per J-S

SMBT2222A/MMBT2222ANPN Silicon Switching Transistor Low collector-emitter saturation voltage23 Complementary type: 1 SMBT2907A / MMBT2907A (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageSMBT2222A/MMBT2222A s1P SOT231 = B 2 = E 3 = CMaximum RatingsParameter Symbol Value Unit40 VCollector-emitter

MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth MMDT2222AMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesNPN Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Plastic-Encapsulate Epitaxial Die Construction Transistors Small Surface Mount Package Marking

MCCMicro Commercial ComponentsTMMMST2222A20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulate Moisure Sensitivity Level 1 Power

MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth MMBT2222ATMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN General Capable of 150mWatts of Power Diss

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthPN2222AMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) 625mW Marking:Type number Continuous Collector Current (Ic) =600mA. NPN General Operating and storange

MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth MMBT2222ATMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN General Capable of 150mWatts of Power DissipationPurpose Amplifier Operating and Storage Junction T

MCC2N2222Micro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112N2222APhone: (818) 701-4933Fax: (818) 701-4939Features High current (max.800mA) Low voltage (max.40V) NPN Switching Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates TransistorsRoHS Compliant. See ordering information) Maximum Ratings

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMMBT2222AMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation, IC=600mANPN General Operating and Storage Junction Temperature: -55C to +150C Thermal resistance,Junction to Ambient:500oC/

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

PN2222, PN2222AGeneral PurposeTransistorsNPN Siliconhttp://onsemi.comFeatures Pb-Free Packages are Available*COLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO Vdc1PN2222 30EMITTERPN2222A 40Collector-Base Voltage VCBO VdcPN2222 60PN2222A 75Emitter-Base Voltage VEBO VdcPN2222 5.0TO-92PN2222A 6.0CASE 29STYLE

MPS2222, MPS2222AMPS2222A is a Preferred DeviceGeneral PurposeTransistorsNPN Siliconhttp://onsemi.comFeatures Pb-Free Packages are Available*COLLECTOR3MAXIMUM RATINGS2Rating Symbol Value Unit BASECollector-Emitter Voltage VCEO VdcMPS2222 301MPS2222A 40EMITTERCollector-Base Voltage VCBO VdcMPS2222 60MPS2222A 75Emitter-Base Voltage VEBO VdcMPS2222 5.

MMBT2222L, MMBT2222AL,SMMBT2222ALGeneral Purpose TransistorsNPN Siliconwww.onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant 3 S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified and1PPAP CapableBASE2MAXIMUM RATINGSEMITTERRating Symbol Valu

PN2222, PN2222AGeneral PurposeTransistorsNPN Siliconhttp://onsemi.comFeatures Pb-Free Packages are Available*COLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO Vdc1PN2222 30EMITTERPN2222A 40Collector-Base Voltage VCBO VdcPN2222 60PN2222A 75Emitter-Base Voltage VEBO VdcPN2222 5.0TO-92PN2222A 6.0CASE 29STYLE

P2N2222AAmplifier TransistorsNPN SiliconFeatures These are Pb--Free Devices*http://onsemi.comCOLLECTOR1MAXIMUM RATINGS (TA =25C unless otherwise noted)Characteristic Symbol Value Unit2BASECollector--Emitter Voltage VCEO 40 VdcCollector--Base Voltage VCBO 75 Vdc3Emitter--Base Voltage VEBO 6.0 VdcEMITTERCollector Current -- Continuous IC 600 mAdcTotal Devi

MMBT2222AM3T5GNPN General PurposeTransistorThe MMBT2222AM3T5G device is a spin-off of our popularSOT-23 three-leaded device. It is designed for general purposeamplifier applications and is housed in the SOT-723 surface mounthttp://onsemi.compackage. This device is ideal for low-power surface mountapplications where board space is at a premium.FeaturesCOLLECTOR3 Reduce

PN2222, PN2222AGeneral PurposeTransistorsNPN Siliconhttp://onsemi.comFeatures Pb-Free Packages are Available*COLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO Vdc1PN2222 30EMITTERPN2222A 40Collector-Base Voltage VCBO VdcPN2222 60PN2222A 75Emitter-Base Voltage VEBO VdcPN2222 5.0TO-92PN2222A 6.0CASE 29STYLE

May 2006KST2222AtmNPN Epitaxial Silicon TransistorGeneral Purpose TransistorMarking3 1P2SOT-2311. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 75 VVCEO Collector-Emitter Voltage 40 VVEBO Emitter-Base Voltage 6 VIC Collector Current 600 mAPC Collector Power Dissipa

MMBT2222L, MMBT2222AL,SMMBT2222ALGeneral Purpose TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant 3 AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique1Site and Control Change RequirementsBASE2MAXIMUM RATINGSEMITTERRating Symbo

MMPQ2222APreferred DeviceQuad General PurposeTransistorNPN Siliconhttp://onsemi.com1MAXIMUM RATINGS 162 15Rating Symbol Value Unit3 144 13Collector-Emitter Voltage VCEO 40 Vdc5 126 11Collector-Base Voltage VCB 75 Vdc7 10Emitter-Base Voltage VEB 5.0 Vdc8 9Collector Current - Continuous IC 500 mAdcFourTransistorsEqual PowerTotal Power Dissipation PD W

MMBT2222ATT1General Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT-416/SC-75 package whichis designed for low power surface mount applications.http://onsemi.comFeaturesCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASE2MAXIMUM RATINGS (TA = 25

MPS2222, MPS2222AMPS2222A is a Preferred DeviceGeneral PurposeTransistorsNPN Siliconhttp://onsemi.comFeatures Pb-Free Packages are Available*COLLECTOR3MAXIMUM RATINGS2Rating Symbol Value Unit BASECollector-Emitter Voltage VCEO VdcMPS2222 301MPS2222A 40EMITTERCollector-Base Voltage VCBO VdcMPS2222 60MPS2222A 75Emitter-Base Voltage VEBO VdcMPS2222 5.

PZT2222AT1NPN Silicon PlanarEpitaxial TransistorThis NPN Silicon Epitaxial transistor is designed for use in linearand switching applications. The device is housed in the SOT--223package which is designed for medium power surface mounthttp://onsemi.comapplications.Features SOT--223 PACKAGE PNP Complement is PZT2907AT1 NPN SILICON TRANSISTOR The SOT--223 Package Can be

MMBT2222ATT1G,NSVMMBT2222ATT1GGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SOT-416/SC-75 package whichis designed for low power surface mount applications.COLLECTOR3Features NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Chang

MBT2222ADW1T1GGeneral Purpose TransistorNPN SiliconFeatures Moisture Sensitivity Level: 1http://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant(3) (2) (1)MAXIMUM RATINGSRating Symbol Value Unit Q1 Q2Collector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 75 Vdc(4) (5) (6)Emitter-Base Voltage VEBO 6.0 VdcCollector Cur

MMBT2222ATT1G,NSVMMBT2222ATT1GGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SOT-416/SC-75 package whichis designed for low power surface mount applications.COLLECTOR3Features NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Chang

MMBT2222ATT1G,NSVMMBT2222ATT1GGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SOT-416/SC-75 package whichis designed for low power surface mount applications.COLLECTOR3Features NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Chang

MMBT2222L, MMBT2222AL,SMMBT2222ALGeneral Purpose TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant 3 AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique1Site and Control Change RequirementsBASE2MAXIMUM RATINGSEMITTERRating Symbo

MMBT2222AM3T5GNPN General PurposeTransistorThe MMBT2222AM3T5G device is a spin-off of our popularSOT-23 three-leaded device. It is designed for general purposeamplifier applications and is housed in the SOT-723 surface mountwww.onsemi.compackage. This device is ideal for low-power surface mountapplications where board space is at a premium.COLLECTORFeatures3 Reduces B

MMBT2222AWT1G,SMMBT2222AWT1GGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SOT-323/SC-70 package whichis designed for low power surface mount applications.Features AEC-Q101 Qualified and PPAP CapableSC-70 S Prefix for Automotive and Other Applications Requiring Uni

MBT2222ADW1T1GGeneral Purpose TransistorNPN SiliconFeatures Moisture Sensitivity Level: 1http://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant(3) (2) (1)MAXIMUM RATINGSRating Symbol Value Unit Q1 Q2Collector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 75 Vdc(4) (5) (6)Emitter-Base Voltage VEBO 6.0 VdcCollector Cur

MMBT2222ATT1G,NSVMMBT2222ATT1GGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SOT-416/SC-75 package whichis designed for low power surface mount applications.COLLECTOR3Features NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Chang

MPS2222, MPS2222AMPS2222A is a Preferred DeviceGeneral PurposeTransistorsNPN Siliconhttp://onsemi.comFeatures Pb-Free Packages are Available*COLLECTOR3MAXIMUM RATINGS2Rating Symbol Value Unit BASECollector-Emitter Voltage VCEO VdcMPS2222 301MPS2222A 40EMITTERCollector-Base Voltage VCBO VdcMPS2222 60MPS2222A 75Emitter-Base Voltage VEBO VdcMPS2222 5.

MPS2222, MPS2222AMPS2222A is a Preferred DeviceGeneral PurposeTransistorsNPN Siliconhttp://onsemi.comFeatures Pb-Free Packages are Available*COLLECTOR3MAXIMUM RATINGS2Rating Symbol Value Unit BASECollector-Emitter Voltage VCEO VdcMPS2222 301MPS2222A 40EMITTERCollector-Base Voltage VCBO VdcMPS2222 60MPS2222A 75Emitter-Base Voltage VEBO VdcMPS2222 5.

P2N2222AAmplifier TransistorsNPN SiliconFeatures These are Pb--Free Devices*http://onsemi.comCOLLECTOR1MAXIMUM RATINGS (TA =25C unless otherwise noted)Characteristic Symbol Value Unit2BASECollector--Emitter Voltage VCEO 40 VdcCollector--Base Voltage VCBO 75 Vdc3Emitter--Base Voltage VEBO 6.0 VdcEMITTERCollector Current -- Continuous IC 600 mAdcTotal Devi

MBT2222ADW1,NSVBT2222ADW1General Purpose TransistorNPN Siliconhttp://onsemi.comFeatures Moisture Sensitivity Level: 1 NSV Prefix for Automotive and Other Applications Requiring(3) (2) (1)Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapableQ1 Q2 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant(4) (5) (6)MAXIM

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MMBT2222AWT1G,SMMBT2222AWT1GGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SOT-323/SC-70 package whichis designed for low power surface mount applications.Features AEC-Q101 Qualified and PPAP CapableSC-70 S Prefix for Automotive and Other Applications Requiring Uni

MMBT2222AWT1G,SMMBT2222AWT1GGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SOT-323/SC-70 package whichis designed for low power surface mount applications.Features AEC-Q101 Qualified and PPAP CapableSC-70 S Prefix for Automotive and Other Applications Requiring Uni

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

MBT2222ADW1,NSVBT2222ADW1General Purpose TransistorNPN Siliconhttp://onsemi.comFeatures Moisture Sensitivity Level: 1 NSV Prefix for Automotive and Other Applications Requiring(3) (2) (1)Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapableQ1 Q2 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant(4) (5) (6)MAXIM

PZT2222ANPN Silicon PlanarEpitaxial TransistorThis NPN Silicon Epitaxial transistor is designed for use in linearand switching applications. The device is housed in the SOT-223package which is designed for medium power surface mountwww.onsemi.comapplications.Features SOT-223 PACKAGE PNP Complement is PZT2907AT1 NPN SILICON TRANSISTOR The SOT-223 Package Can be Soldered

PN2222, PN2222AGeneral PurposeTransistorsNPN Siliconhttp://onsemi.comFeatures Pb-Free Packages are Available*COLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO Vdc1PN2222 30EMITTERPN2222A 40Collector-Base Voltage VCBO VdcPN2222 60PN2222A 75Emitter-Base Voltage VEBO VdcPN2222 5.0TO-92PN2222A 6.0CASE 29STYLE

MMBT2222AWT1General Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT-323/SC-70 package whichis designed for low power surface mount applications.http://onsemi.comFeaturesCOLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3Compliant1MAXIMUM RATINGSBASERating Symbo

UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 PN2222AL-AB3-R PN2222AG-AB3-R SOT-89 B C E Tape ReelPN2222AL-

UNISONIC TECHNOLOGIES CO., LTD MMBT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE 33AMPLIFIER 1122 FEATURES SOT-23SOT-323(JEDEC TO-236)* This device is for use as a medium power amplifier and switchrequiring collector currents up to 600mA. 3112SOT-523 DFN1006-3 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing 1 2 3MMBT

UNISONIC TECHNOLOGIES CO., LTD PZT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. 1SOT-223 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 PZT2222AL-AA3-R PZT2222AG-AA3-R SOT-223 B C E Tape Ree

PN2222ANPN Silicon TransistorDescriptions PIN Connection General purpose application C Switching application Features B Low Leakage current Low collector saturation voltage enabling Elow voltage operation Complementary pair with PN2907A TO-92 Ordering Information Type NO. Marking Package Code PN2222A PN2222A TO-92 Absolute maximum rat

v SBT2222AUFNPN Silicon TransistorDescriptions PIN Connection General purpose application Switching application 3 Features Low Leakage current 1 Low collector saturation voltage enabling 2 low voltage operation Complementary pair with SBT2907AUF SOT-323F Ordering Information Type NO. Marking Package Code IQ SBT2222AUF SOT-323F

STN2222ANPN Silicon TransistorDescriptions PIN Connection General purpose application C Switching application BFeatures Large collector current Low collector saturation voltage E Complementary pair with STN2907A TO-92 Ordering Information Type NO. Marking Package Code STN2222A STN2222A TO-92 : Year & Week Code Absolute maximum

v SBT2222AUNPN Silicon TransistorDescriptions PIN Connection General purpose application Switching application Features 3 Low Leakage current 1 Low collector saturation voltage enabling 2 low voltage operation Complementary pair with SBT2907AU SOT-323 Ordering Information Type NO. Marking Package Code IQ SBT2222AU SOT-323

STN2222ASSemiconductorSemiconductorNPN Silicon TransistorDescriptions General purpose application Switching applicationFeatures Large collector current Low collector saturation voltage Complementary pair with STN2907ASOrdering InformationType NO. Marking Package Code STN2222AS XA SOT-23Outline Dimensions unit : mm2.40.11.300.11320.4

STN2222ASFNPN Silicon TransistorDescriptions PIN Connection General purpose application 3 Switching application 1 Features 2 Large collector current SOT-23F Low collector saturation voltage Complementary pair with STN2907ASF Ordering Information Type NO. Marking Package Code XA STN2222ASF SOT-23F Device Code Year&

SBT2222AFNPN Silicon TransistorDescriptions PIN Connection General purpose application Switching application 3 Features Low Leakage current 1 Low collector saturation voltage enabling low voltage operation 2 SOT-23F Complementary pair with SBT2907AF Ordering Information Type NO. Marking Package Code 1P SBT2222AF SOT-23F

SBT2222ANPN Silicon TransistorDescriptions PIN Connection General purpose application Switching application Features Low Leakage current Low collector saturation voltage enabling low voltage operation Complementary pair with SBT2907A SOT-23 Ordering Information Type NO. Marking Package Code 1P SBT2222A SOT-23 Device Cod

Product Bulletin JANTX, JANTXV, 2N2222AUBSeptember 1996Surface Mount NPN General Purpose TransistorType JANTX, JANTXV, 2N2222AUBFeature Absolute Maximum Ratings (TA = 25o C unless otherwise noted)Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 VCeramic surface mount packageCollector-Emitter Voltage. . . . . . .

CMBT2222ANPN Silicon Planar Epitaxial Transistors Pin configuration:1. BASE2. EMITTER3. COLLECTOR312Unit: inch (mm)Absolute Maximum RatingsSymbol Value UNITCollector-base voltage (open emitter)VCBOmax 75 VCollector-emmitter voltage (open base)VCEO max 40 VEmmitter base voltage (open collector)VEBO max 6.0 VICCollector current (d.c.) max 600 mATotal

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2222AC1 High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 75V VCEO Collector Emitter Voltage 50V VE

SILICON SWITCHING NPN TRANSISTOR 2N2222AC3A, 2N2222AC3B 2N2222AC3C High Speed Saturated Switching Hermetic LCC3 Ceramic package. Variant B to MIL-PRF-19500/255 outline Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 75V VCEO Collector Emitter Voltage 50V VEBO Emitter Bas

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2222AC1 High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 75V VCEO Collector Emitter Voltage 50V VE

MMBT2222AT NPN Silicon General Purpose Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-523 Epitaxial Planar Die Construction Complementary PNP Type Available(MMBT2907FW) Ideal for Medium Power Amplification and Switching MARKING CODE 1P PACKAGE INFORMATION Package MPQ Leader Size Millim

MPS2222A NPN Silicon Elektronische BauelementeGeneral Purpose Transistor RoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeTO-92COLLECTOR32BASE FEATURES 1. Epitaxial Planar Die Construction1EMITTER23. Complementary PNP Type Available (MPS2907A) . Ideal for Medium Power Amplification and Switching MAXIMUM RATINGS RATING SYMBOL VALUE

MMBT2222ANPN SiliconElektronische Bauelemente General Purpose TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeFEATURESACOLLECTOR L Epitaxial Planar Die Construction333 Complementary PNP Type AvailableSTop ViewB(MMBT2907A)111 2 Ideal for Medium Power Amplification andBASE 2SwitchingV G2EMITTERCHJDKMAXIMUM

MMDT2222ANPN Silicon Elektronische BauelementeMulti-Chip TransistorRoHS Compliant ProductSOT-363o.055(1.40)8* Features .047(1.20)0o .026TYP(0.65TYP) .021REF(0.525)REFPower dissipation.053(1.35)O .096(2.45).045(1.15)PCM : 0.15 W (Tamp.= 25 C) .085(2.15)Collector current.018(0.46).010(0.26)C1 B2 E2ICM : 0.6 A.014(0.35).006(0.15).006(0.15)

MMBT2222AW NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323FEATURE Complementary PNP Type Available(MMBT2907AW) AL Epitaxial Planar Die Construction 33 Ideal for Medium Power Amplification and Switching Top View C B11 22K EDMARKING CODE H JF GMM

PZT2222ANPN SiliconElektronische BauelementeGeneral Purpose TransistorRoHS Compliant ProductSOT-223 C 1. BASE 2. COLLECTORFEATURES 3. EMITTERE CPower dissipationB PCM : 1 W Tamb=25 Collector currentICM : 0.6 A Collector-base voltage V(BR)CBO : 75 V Operating and stora

MMBT2222A Taiwan Semiconductor 300mW, NPN Small Signal Transistor FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement VCBO 75 V High surge current capability VCEO 40 V Compliant to RoHS directive 2011/65/EU and VEBO 6 V in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors C TK2222ATTD03 TRANSISTOR WBFBP-03A (1.61.60.5) TOP unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor B E FEATURES 1. BASE C Complementary PNP Type available (TK2907ATTD03) 2. EMITTER 3. COLLECTOR BACK PPLICATION general purpose amplifier, switching

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate TransistorsSOT-323 MMST2222A TRANSISTOR ( NPN )FEATURES Epitaxial planar die construction Complementary PNP Type available(MMST2907A) 1. BASE MARKING: K3P 2. EMITTER3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 75 V VC

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate TransistorsMMBT2222AM TRANSISTOR (NPN)SOT-723 FEATURES33 Epitaxial planar die construction Complementary PNP Type available(MMBT2907AM)11. BASE22.EMITTERMARKING: 1P 3.COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted )Symbol Parameter Value UnitVCBO Collector-Base Voltage 75 V

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors MMBT2222AT TRANSISTOR (NPN) FEATURES SOT523 Complementary to MMBT2907AT Small Package MARKING:1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit1. BASE VCBO Collector-Base Voltage 75 V 2. EMITTER VCEO Collector-Emitter Voltage 40 V 3. COLL

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsTO-92 MPS2222A TRANSISTOR (NPN )1. EMITTERFEATURE 2. BASEComplementary NPN Type available (MPS2907A) 3. COLLECTOR Equivalent Circuit MPS 2222A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors PXT2222A TRANSISTOR (NPN) SOT-89-3L FEATURES 1. BASE Epitaxial planar die construction Complementary PNP Type available(PXT2907A) 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value UnitVCBO Collector-Base Voltage 75 V VCEO C

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT2222A TRANSISTOR (NPN) 1. BASE FEATURES 2.EMITTER Epitaxial planar die construction 3.COLLECTOR Complementary PNP Type available(MMBT2907A) MAXIMUM RATINGS (Ta=25 unless otherwise noted)Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO 40

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors PZT2222A TRANSISTOR (NPN) SOT-223 FEATURES Epitaxial planar die construction Complementary PNP Type available (PZT2907A) 1. BASE MARKING: 2. COLLECTOR 3. EMITTERSolid dot = Green molding compound device, if none,the normal device. MAXIMUM RATINGS (Ta=25 unless otherwis

SEMICONDUCTOR KTN2222AETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EFEATURES BLow Leakage Current DDIM MILLIMETERS: ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V.2_+A 1.60 0.10Low Saturation Voltage _+B 0.85 0.1031_C 0.70 0.10+: VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.D 0.27+0.10/-0.05_Complementary

SEMICONDUCTOR KTN2222S/ASTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURES DIM MILLIMETERS_+A 2.93 0.20Low Leakage Current B 1.30+0.20/-0.15: ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. C 1.30 MAX23 D 0.40+0.15/-0.05Low Saturation Voltage E 2.40+0.30/-0.201G 1.90: VCE(sat)=0.3V(Max.) ; IC=150mA,

SEMICONDUCTOR KN2222S/ASTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. EFEATURES L B LDIM MILLIMETERSLow Leakage Current _+2.93 0.20AB 1.30+0.20/-0.15: ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V.C 1.30 MAX2Low Saturation Voltage 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.20: VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.1G 1

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 DEVICES LEVELS JANSM 3K Rads (Si) 2N2221A 2N2222A JANSD 10K Rads (Si) 2N2221AL 2N2222AL JANSP 30K Rads (Si) 2N2221AUA 2N2222AUA

Zowie Technology CorporationGeneral Purpose TransistorNPN SiliconHalogen-free typeLead free productCOLLECTOR33BASE1MMBT2222AGH 122SOT-23EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 75 VdcEmitter-Base Voltage VEBO 6.0 VdcCollector Current-Continuous IC 600 mAdcTHERMAL CHARACTERISTICSChar

MMST2222ATRANSISTOR(NPN)SOT-323 FEATURES Epitaxial planar die construction 1. BASE Complementary PNP Type available(MMST2907A) 2. EMITTER MARKING: K3P 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 75 V VCEO 40 VCollector-Emitter Voltage VEBO 6 VEmitter-Base Voltage IC Collector Curren

PXT2222ATRANSISTOR (NPN) SOT-89 FEATURES 1. BASE Epitaxial planar die construction Complementary PNP Type available(PXT2907A) 2. COLLECTOR 1 2MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER 3Symbol Parameter Value UnitsVCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V Collector Current -Continuo

MMBT2222ATRANSISTOR(NPN)SOT-23 FEATURES Epitaxial planar die construction 1. BASE Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING: 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 75 V VCEO 40 VCollector-Emitter Voltage VEBO 6 VEmitter-Base Voltage IC Collector Current -C

MMST2222ASOT-323 Transistor (NPN) SOT-3231. BASE 2. EMITTER 3. COLLECTOR Features Epitaxial planar die construction Complementary PNP Type available(MMST2907A) MARKING: K3P Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 75 V VCEO 40 VCollector-Emitter Voltage

MPS2222ATO-92 Transistor (NPN)TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Complementary NPN Type available (MPS2907A) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 75 VVCEO Collector-Emitter Voltage 40 VVEBO Emitter-Base Voltage 6 VDimensions in inches and (millimeters)IC Collector Current -Continuou

MMBT2222A SOT-23 Transistor(NPN)SOT-231. BASE 2.EMITTER 3.COLLECTOR Features Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) MARKING: 1P Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emit

MMBT2222ALT1 NPN General Purpose Amplifier1. BASE 2. EMITTER3. COLLECTORFEATURES A SOT-23 Dim Min Max Epitaxial planar die construction. A 2.70 3.10EB 1.10 1.50 Complementary PNP type available K BC 1.0 TypicalMMBT2907A. D 0.4 TypicalE 0.35 0.48JD Ultra-small surface mount package. G 1.80 2.00GH 0.02 0.1J 0.1 TypicalHK 2.20 2.60APPLICATIO

PXT2222A SOT-89 Transistor(NPN)1. BASE SOT-892. COLLECTOR 1 4.6B3. EMITTER 4.42 1.61.81.41.43Features2.64.252.43.75 Epitaxial planar die construction 0.8MIN Complementary PNP Type available(PXT2907A) 0.530.400.480.442x)0.13 B0.35 0.371.53.0MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millime

PZT2222A SOT-223 Transistor(NPN)1. BASE SOT-2232. COLLECTOR 1 3. EMITTER Features Epitaxial planar die construction Complementary PNP Type available (PZT2907A) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V Dimensions in inches and

3DK2222A(NPN) TO-92 Bipolar TransistorsTO-92 1. EMITTER 4.45 2. BASE 5.21 3. COLLECTOR 4.322.92 5.33FeaturesMIN Epitaxial planar die construction 3.43MINMAXIMUM RATINGS (TA=25 unless otherwise noted) 2.412.67Symbol Parameter Value Units3.182.034.19VCBO Collector-Base Voltage 75 V2.671.14VCEO Collector-Emitter Voltage 40 V 1.402.032.67

3DK2222A SOT-23 Transistor(NPN)1. BASE SOT-232.EMITTER 3.COLLECTOR Features Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) MARKING: 1P1 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 75 V VCEO 40 VCollector-Emitter Voltage VEBO 6 V

WTM2222ANPN Epitaxial Planar TransistorsSOT-89P b Lead(Pb)-Free121. BASEFeatures:32. COLLECTOR3. EMITTER* Low Collector Saturation Voltage* High Speed Switching* For Complementary Use With PNP Type WTM2907AABSOLUTE MAXIMUM RATINGS (TA=25C)Rating Symbol Limits UnitVCBO VCollector-Base Voltage75VCEOVCollector-Emitter Voltage 40VEBOVEmitter-Base Vo

MMBT2222ATCOLLECTORPlastic-Encapsulate Transistors33NPN Silicon 121BASEP b Lead(Pb)-FreeSC-892EMITTER (SOT-523F)MAXIMUM RATINGSValueRating SymbolUnit40Collector-Emitter Voltage VCEO Vdc75Collector-Base Voltage VCBOVdcEmitter-Base Voltage VEBO 6.0 VdcCollector Current-Continuous IC 600 mAdcTHERMAL CHARACTERISTICSCharacteristics SymbolUnitMa

MBT2222ADWDual General Purpose Transistors2 13654NPN+NPN Silicon12345 6SOT-363(SC-88)NPN+NPNValueVCEO(1)150833T ,Tstg -55 to+150JMBT2222ADW=XXu1. Device mounted on FR4 glass epoxy printed circuit board usingthe minimum recommended footprintWEITRONhttp://www.weitron.com.twMBT2222ADWELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise not

MMBT2222AW312SOT-323(SC-70)ValueVCEO150833T ,Tstg -55 to+150JMMBT2222AW=P1(1)u1. Pulse Test: Pulse Width 300us, Duty Cycle 2.0%WEITRONhttp://www.weitron.com.twMMBT2222AWELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)CharacteristicsSymbol Max UnitMinON CHARACTERISTICS(1)DC Current Gain-(IC=0.1 mAdc, VCE=10 Vdc)35-(

PZT2222ANPN Silicon Planar Epitaxial TransistorCOLLECTOR2, 4 SOT-22341. BASE BASE2.COLLECTOR1 13.EMITTER24.COLLECTOR33EM ITTERABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating SymbolValue UnitCollector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBOVdc75Emitter-Base Voltage VEBOVdc6.0Collector Current (DC) IC(DC)Adc0.61.5Total Device D

FM120-M WILLASTHRUMMBT2222AWT1FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VGeneral Purpose TransistorsSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order toNPN Silic

FM120-M MMBT2222ADW1T1WILLASTHRUDual General Purpose TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to o

FM120-MWILLASTHRUPXT2222ASOT-89 Plastic-Encapsulate TransistorsFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free Produ Package outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123HSOT-89 TRANSISTOR (NPN) Low profile surface mounted

FM120-M WILLASTHRUMMBT2222ATT1General Purpose T BARRIER RECTIFIERS -20V- 200VransistorFM1200-M 1.0A SURFACE MOUNT SCHOTTKYSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process dNPN Siliconeesign, excellent power dissipation offers better reverse l akage current and thermal resistance.SOD-123H Low profile surface mounted application in order

Spec. No. : HE6822 HI-SINCERITY Issued Date : 1993.06.30 Revised Date :2010.08.06 MICROELECTRONICS CORP. Page No. : 1/5 HMBT2222A NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT2222A is designed for general purpose amplifier and high-speed switching, medium-power switching applications. SOT-23 Features High frequency current gain High Speed Switching Abs

Spec. No. :HE9521 HI-SINCERITY Issued Date : 1997.06.18 Revised Date : 2008.08.04 MICROELECTRONICS CORP. Page No. : 1/5 HM2222A NPN EPITAXIAL PLANAR TRANSISTOR Description The HM2222A is designed for general purpose amplifier and high speed, medium-power switching applications. Features SOT-89 Low collector saturation voltage High speed switching For co

Spec. No. : HE6118HI-SINCERITYIssued Date : 1992.10.23Revised Date : 2004.12.15MICROELECTRONICS CORP.Page No. : 1/5HPN2222ANPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HPN2222A is designed for general purpose amplifier and high speed,medium-power switching applications.FeaturesTO-92 Low Collector Saturation Voltage High Speed Switching For Complementary U

AFT2222A Alfa-MOS Technology NPN General Purpose Amplifier Features This device is designed as a general purpose amplifier and switch. Pin Description ( SOT-23 ) Ordering Information Part Ordering No. Part Marking Package Unit Quantity AFT2222AT1S23RG 1P SOT-23 Tape & Reel 3000 EA Absolute Maximum Ratings (TA=25 Unless otherwise noted) Symbol Parameter Value Unit VCEO

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors TO-92 MPS2222A TRANSISTOR (NPN ) 1. EMITTER FEATURE Complementary NPN Type available (MPS2907A) 2. BASE 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units 1 2 3 VCBO Collector-Base Voltage 75 VVCEO Collector-Emitter Voltage 40 VVEBO Emi

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR (NPN) SOT-23 FEATURES Epitaxial planar die construction 1. BASE Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING: 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 75 V

Spec. No. : C825L3 Issued Date : 2006.04.25 CYStech Electronics Corp.Revised Date : Page No. : 1/4 NPN Epitaxial Planar Transistor PZT2222AL3 Features High current, max. 600mA Low voltage, max. 40V Pb-free package Applications Switching and linear amplification Symbol Outline PZT2222AL3 SOT-223 C E C BBase B CCollector EEmitter

Spec. No. : C227A3 Issued Date : 2003.03.26 CYStech Electronics Corp.Revised Date : 2014.04.25 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor BTN2222A3Description Low collector output capacitance. High current capability Low leakage current High cutoff frequency Pb-free lead plating and halogen-free package Symbol Outline BTN2222

Spec. No. : C227N3 Issued Date : 2003.06.11 CYStech Electronics Corp.Revised Date : 2013.10.31 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor BTN2222AN3Description The BTN2222AN3 is designed for general purpose amplifier applications. It is housed in the SOT-23 package which is designed for low power surface mount applications. Low VCE(sat) Lo

Spec. No. : C203N3 Issued Date : 2002.05.11 CYStech Electronics Corp.Revised Date : 2010.11.12 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor MMBT2222ADescription The MMBT2222A is designed for using in driver stage of AF amplifier and general purpose switching application. High I , I = 0.6A. C(Max) C(Max) Low V , Typ. V = 0.2V at I /I = 500mA/

Spec. No. : C227L3 Issued Date : 2004.03.17 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTN2222AL3Description Low collector output capacitance. High current capability Low leakage current High cutoff frequency Complementary to BTP2907AL3 SymbolBTN2222AL3 BBase CCollector E

2N2222A Rev.G .Aug.-2018 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features I , V CBO CE(sat)Low Leakage current, Low collector saturation voltage enabling low voltage operation. / Applications General purpose amplifier.

MMBT2222A Rev.G Aug.-2018 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features 600mACollector currents up to 600 mA. / Applications General purpose amplifier. / Equivalent Circuit

2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Sy

MMBT2222 / MMBT2222A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications TO-236 Plastic PackageAbsolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage MMBT2222 60 VCBO V MMBT2222A 75 Collector Emitter Voltage MMBT2222 30 VCEO V MMBT2222A 40 Emitter Base Voltage MMBT2222 5 VEBO V MMBT2222A 6 Collector Curr

LMBT2222ALT1GS-LMBT2222ALT1GGeneral Purpose Transistors NPN Silicon1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.2. DEVICE MARKING AND ORDERING INFORMATIONDev

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconThese transistors are designed for generalpurpose amplifier applications. They are LMBT2222AWT1Ghoused in the SOT323/SC70 package whichS-LMBT2222AWT1Gis designed for low power surface mountapplications.We declare that the material of product 3compliance with RoHS requirements.S- Prefix for Automotive a

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN SiliconLMBT2222ADW1T1GS-LMBT2222ADW1T1G We declare that material of product compliance with ROHS requirements. S- Prefix for Automotive and Other Applications Requiring65 Unique Site and Control Change Requirements;4AEC-Q101 Qualified and PPAP Capable.12MAXIMUM RATINGS3Rating Symbol Value UnitSC-

LESHAN RADIO COMPANY, LTD.General Purpose TransistorLMBT2222ATT1GNPN SiliconS-LMBT2222ATT1GThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-89 package whichis designed for low power surface mount applications.Featurescompliance with RoHS requirements. We declare that the material of product S- Prefix for Automotive

LESHAN RADIO COMPANY, LTD.General Purpose TransistorLMBT2222ATT1GNPN SiliconS-LMBT2222ATT1GThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-89 package whichis designed for low power surface mount applications.Featurescompliance with RoHS requirements. We declare that the material of product S- Prefix for Automotive

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLMBT2222ALT1GFEATURESS-LMBT2222ALT1G1) We declare that the material of product compliant with RoHS requirements and Halogen Free.32) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.12SOT-23DEVICE MARKING AN

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN SiliconLMBT2222ADW1T1GS-LMBT2222ADW1T1G We declare that material of product compliance with ROHS requirements. S- Prefix for Automotive and Other Applications Requiring65 Unique Site and Control Change Requirements;4AEC-Q101 Qualified and PPAP Capable.12MAXIMUM RATINGS3Rating Symbol Value UnitSC-

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H2222A APPLICATIONS General Purpose Transistors. ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150 TjJunction Temperature150 PCCollector Dissipation

3DG2222A(BT2222A) NPN PCM TC75 300 mW ICM 600 mA Tjm 150 Tstg -55~150 V(BR)CBO ICB0.1mA 75 V V(BR)CEO ICE0.1mA 40 V V(BR)EBO IEB0.1mA 6.0 V ICBO VCB=10V 1.0 A IEBO VCB=4V 1.0 A IC=0.5A VCEsat 0.6 V IB=0.05A VCE=10V

SMD Type TransistorsProduct specificationKMBT2222ASOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13 Features High current (max. 600 mA) Low voltage (max.40 V).1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 75 VCollector-emitter voltag

SEMICONDUCTORMPS2222ATECHNICAL DATAGeneral Purpose TransistorB CNPN SiliconFEATURE DIM MILLIMETERSComplementary PNP Type available (MPS2907A)A 4.70 MAXEB 4.80 MAXGC 3.70 MAXDD 0.55 MAXE 1.00MAXIMUM RATINGS (TA=25 unless otherwise noted) F 1.27G 0.85H 0.45_Symbol Parameter Value Units HJ 14.00 0.50+L 2.30F FM 0.51 MAXVCBO Collector-Base

SEMICONDUCTOR2N2222AETECHNICAL DATAGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifier3applications. They are housed in the SC-89 package whichis designed for low power surface mount applications.1Features 2compliance with RoHS requirements. We declare that the material of product SC-89ORDERING INFORMATIONCOLLECTOR

SEMICONDUCTORFFB2222ADTECHNICAL DATADual General Purpose Switching TransistorsNPN Silicon We declare that material of product compliance with ROHS requirements. 654123MAXIMUM RATINGS SOT-363 (SC-88)Rating Symbol Value UnitCollectorEmitter Voltage VCEO 40 VdcCollectorBase Voltage VCBO 75 VdcEmitterBase Voltage VEBO 6.0 Vdc(3) (2) (1)Collector Cur

MMBT2222LTG,MMBT2222ALTGGeneral Purpose TransistorsFeaturesPackage outline Pb-Free Package May be Available. The G-Suffix Denotes a Pb-Free Lead Finish3Ordering Information1Device Package ShippingMMBT2222LTG SOT23 3000/Tape & Reel 2MMBT2222ALTG SOT23 3000/Tape & ReelSOT23Maximum RatingsRating Symbol 2222 2222A Unit3COLLECTORCollectorEmitter Vo

SEMICONDUCTOR2N2222ASTECHNICAL DATAGeneral Purpose TransistorNPN Silicon3compliance with RoHS requirements. We declare that the material of product 21ORDERING INFORMATION SOT23Device Maring Shipping 2N2222AS 1P 3000 / Tape & ReelCOLLECTOR31MAXIMUM RATINGS (TA = 25C)BASERating Symbol Max Unit2Collector-Emitter Voltage VCEO 40 VdcEMITTERCol

SEMICONDUCTOR2N2222AUTECHNICAL DATAGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-323/SC-70 package which 3is designed for low power surface mount applications.Features 12compliance with RoHS requirements. We declare that the material of product SC-70 / SOT 323 ORDERING INFO

SMD Type TransistorsNPN TransistorsPZT2222A (KZT2222A)Unit:mmSOT-2236.500.23.000.1 Features4 Epitaxial planar die construction Complementary to PZT2907A1 2 30.2502.30 (typ)Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VC

SMD Type TransistorsNPN TransistorsPXT2222A (KXT2222A)1.70 0.1 Features Epitaxial planar die construction Complementary to PXT2907A0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 75 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collector

SMD Type TransistorsNPN TransistorsMMST2222A (KMST2222A) Features Epitaxial planar die construction Complementary to MMST2907A1.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 75 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 600

SMD Type TransistorsNPN TransistorsMMBT2222AT (KMBT2222AT)SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features2 1 Small Package Complementary to MMBT2907AT30.30.05+0.10.5-0.11. Base2. Emitter3. Collecter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 75 Coll

SMD Type TransistorsNPN TransistorsPXT2222A (KXT2222A)1.70 0.1 Features Epitaxial planar die construction Complementary to PXT2907A0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 75 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collector

D e s st sNPN TransistorsMMBT2222A (KMBT2222A)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.131 2 +0.1+0.050.95 -0.1 0.1 -0.01+0.11.9-0.1 )1.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 70 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collec

SMD Type TransistorsNPN Transistors FZT2222A (KZT2222A)Unit:mmSOT-2236.500.23.000.14 Features Collector Current Capability IC=0.6A Collector Emitter Voltage VCEO=40V Complementary to FZT2907A1 2 30.2502.30 (typ)0.84 (max)Gauge Plane0.66 (min)1.BaseC 2.Collector3.Emitter4.60 (typ)B 4.CollectorE Absolute Maximum Ratings Ta

SMD Type TransistorsNPN TransistorsMMBT2222AT (KMBT2222AT)SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features2 1 Small Package Complementary to MMBT2907AT30.30.05+0.10.5-0.11. Base2. Emitter3. Collecter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 75 Coll

SMD Type TransistorsNPN Switching TransistorKMBT2222ASOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13 Features High current (max. 600 mA) Low voltage (max.40 V).1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 75 VCollector-emitter vol

SMD Type TransistorsNPN TransistorsPZT2222A (KZT2222A)Unit:mmSOT-2236.500.23.000.1 Features4 Epitaxial planar die construction Complementary to PZT2907A1 2 30.2502.30 (typ)Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VC

SMD Type TransistorsNPN TransistorsMMST2222A (KMST2222A) Features Epitaxial planar die construction Complementary to MMST2907A1.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 75 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 600

Radiation Hardened NPN Silicon Switching Transistors2N2221A, 2N2221AL, 2N2221AUA, 2N2221AUB2N2222A, 2N2222AL, 2N2222AUA, 2N2222AUBFeatures Qualified to MIL-PRF-19500/255 Levels: CommericalJANSJANSM-3K Rads (Si) JANSD-l0K Rads (Si) JANSP-30K Rads (Si) JANSL-50K Rads (Si) JANSR-l00K Rads (Si) TO-18 (TO-206AA), Surface mount UA & UB PackagesAbsolute Maximum Ra

MMBT2222ANPN GENERAL PURPOSE SWITCHING TRANSISTOR40 Volt POWER 225 mWattVOLTAGEFEATURES NPN epitaxial silicon, planar design0.120(3.04)0.110(2.80) Collector-emitter voltage VCE = 40V Collector current IC = 600mA Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard0.056(1.40)0.047(1.20)0.079(2.00) 0.008(0.20)0.070

MMBT2222AWNPN GENERAL PURPOSE SWITCHING TRANSISTOR40 Volt POWER 150 mWattVOLTAGEFEATURES NPN epitaxial silicon, planar design Collector-emitter voltage VCE = 40V Collector current IC = 600mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free)MECHANICAL DATA Case: SOT-323, Plastic Te

CHENMKO ENTERPRISE CO.,LTDCHT2222AGP-ASURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.SOT-23FEATURE* Small surface mounting type. (SOT-23)* High current (Max.=600mA). * Suitable for high packing density.* Low voltage (Max.=40V) .(1)* High saturati

CHENMKO ENTERPRISE CO.,LTDCHT2222AGPSURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.SOT-23FEATURE* Small surface mounting type. (SOT-23)* High current (Max.=600mA). * Suitable for high packing density.* Low voltage (Max.=40V) .(1)* High saturation

Small Signal TransistorMMBT2222A-G (NPN)RoHS DeviceFeaturesSOT-23 -NPN silicon epitaxial planar transistor for switching and amplifier application.0.118(3.00)0.110(2.80)3Mechanical data 0.055(1.40)0.047(1.20) -Case: SOT-23, molded plastic. 1 20.079(2.00)0.071(1.80) -Terminals: solderable per MIL-STD-750, method 2026.0.006(0.15)0.003(0.08) -Approx. weight: 0

Small Signal TransistorMMBT2222A-HF (NPN)RoHS DeviceHalogen FreeFeaturesSOT-23 -NPN silicon epitaxial planar transistor for switching and amplifier application.0.118(3.00)0.110(2.80)3Mechanical data 0.055(1.40)0.047(1.20) -Case: SOT-23, molded plastic. 1 20.079(2.00)0.071(1.80) -Terminals: solderable per MIL-STD-750, method 2026.0.006(0.15)0.003(0.08) -Ap

General Purpose TransistorMMST2222A-G (NPN)RoHS DeviceFeatures -Power dissipationSOT-323OPCM : 0.2W (TA=25 C) -Collector current 0.087 (2.20)0.070 (1.8)ICM : 0.6A3 -Collector-base voltage0.054 (1.35)0.045 (1.15)V(BR)CBO : 75V1 2 -Operating and storage junction temperature range0.056 (1.40)O OTJ, TSTG : -55 C to +150 C0.047 (1.20)0.006 (0.15)Marking:

DC COMPONENTS CO., LTD.DMBT2222ADISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for general purpose switching and amplifier applications.SOT-23.020(0.50).012(0.30)Pinning1 = Base 32 = Emitter .063(1.60) .108(0.65).055(1.40) .089(0.25)3 = Collector1 2Absolute Maximum Ratings(TA=25oC).045(1.15).034(0.

TRANSISTOR KSP2222A MAIN CHARACTERISTICS FEATURES IC 500mA Epitaxial silicon VCEO 27V High switching speed VCBO 42V RoHS RoHS product PC 625mW APPLICATIONS High frequency switch power supply Commonly power amplifier circuit High frequency

GSTMMBT2222A NPN General Purpose Transistors Product Description Features This device is designed as a general purpose Lead(Pb)-Freeamplifier and switch. Packages & Pin Assignments GSTMMBT2222AF(SOT-23) Pin Description1 Base 2 Emitter 3 Collector Marking Information P/N Package Part Marking GSTMMBT2222AF SOT-23 1POrdering Information GS P/NGSTMMBT2222A FPb Fre

KBT2222AC NPN Silicon Transistor 2018.03.28 2018.03.28 2018.03.28 2018.03.28 1 000 2018.03.28 AUK Dalian 1 KBT2222AC NPN Silicon Transistor Descriptions General purpose application

2N2222A(3DG2222A) NPN /SILICON NPN TRANSISTOR : Purpose: General purpose amplifier. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 75 V CBO V 40 V CEO V 6.0 V EBO I 600 mA C P 625 mW CT 150 j T -55150 stg /Electrical characteristics(

PT23T2222A NPN switching transistor Description 3 - Collector NPN switching transistor in a SOT-23 plastic package. 1 - Base 2 - Emitter Feature 3 High current (max. 600 mA) Lead finish:100% matte Sn(Tin) Mounting position: Any Qualified max reflow temperature:260 Device meets MSL 1 requirements 1 2 Pure tin plating: 7 ~ 17 um Fig.1 S

2N2222ANPN / DescriptionsTO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features / Applications ICBO, VCE(sat)Low Leakage current, Low collector saturation voltage enabling low voltage operation.General purpose amplifier. / Equivalent Circuit

MMBT2222/MMBT2222AFEATURESFEATURESFEATURESFEATURESNPN Switching TransistorMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGSSymbolUnitCharacteristic MMBT2222 MMBT2222ACollector-Emitter VoltageV 30 40 VdcCEOCollector-Base Voltage V 60 75 VdcCBOEmitter-Base Voltage V 5.0 6.0 VdcEBOCollector Current-Continuous Ic 600 600 mAdcTHERMAL CHARACTERISTI

MMDT2222ANPN Silicon Epitaxial Planar Transistorfor general purpose and switching applications 6 5 4TR2TR11 2 31. Emitter 2. Base 3. Collector4. Emitter 5. Base 6. CollectorSimplified outline(SOT-363)OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 75 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V

MMBT2222AWNPN General Purpose Transistor321.Base2.Emitter3.Collector1Features Simplified outline(SOT-323)General purpose transistor.3.COLLECTOR1.BASE2.EMITTERAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-emitter voltage VCEO 40 VCollector-base voltage VCBO 75 VEmitter-base voltage VEBO 6.0 VCollector current IC 600 mATotal Devic

RUMW UMW MMBT2222ASOT-23 Plastic-Encapsulate TransistorsSOT-23 MMBT2222A TRANSISTOR (NPN) FEATURES 1. BASE Epitaxial planar die construction 2. EMITTER Complementary PNP Type available(MMBT2907A) 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted)Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO 40 VCollector-Emitter Voltage VEBO

MMBT2222ATransistors SOT-23 Plastic-Encapsulate Transistors(NPN) RHOS FeaturesSOT-23 Epitaxial planar die construction Complementary PNP Type available (MMBT2907A) Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 70 V1. BASE VCEO Collector-Emitter Voltage 40 V 2. EMITT

SMD NPN TransistorFormosa MSMMBT2222 / MMBT2222AGeneral Purpose TransistorNPN SiliconPackage outlineFeatures High collector-emitterbreakdien voltage.SOT-23(BV = 40V@I =10mA)CEO C Small load switch transistor with high gain and lowstauration voltage, is designed for general purposeamflifier and switching applications at collector current. Capable of 225mW pow

MMBT2222ASOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N )SOT- 23Features Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) Marking: 1PSymbol Parameter Value Unit VCBO Collector-Base Voltage 75 V V Collector-Emitter Voltage 40 V CEOV Emitter-Base Voltage 6 V EBOCI Collector Current 600 mA CP Collector Power D

MPS2222AGeneral Purpose TransistorB CNPN SiliconFEATURE DIM MILLIMETERSComplementary PNP Type available (MPS2907A)A 4.70 MAXEB 4.80 MAXGC 3.70 MAXDD 0.55 MAXE 1.00MAXIMUM RATINGS (TA=25 unless otherwise noted) F 1.27G 0.85H 0.45_Symbol Parameter Value Units HJ 14.00 0.50+L 2.30F FM 0.51 MAXVCBO Collector-Base Voltage 75 V VCEO Collector-E

MMBT2222A NPN General Purpose Amplifier FEATURES Epitaxial planar die construction. Complementary PNP type available MMBT2907A. Ultra-small surface mount package. MSL 1 APPLICATIONS Use as a medium power amplifier. Switching requiring collector currents up to 500mA. SOT-23 MAXIMUM RA TING @ Ta=25 unless otherwise specified Symbol Parameter Valu

Jiangsu Yutai Electronics Co.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT2222A TRANSISTOR (NPN) 1. BASE FEATURES 2.EMITTER Epitaxial planar die construction 3.COLLECTOR Complementary PNP Type available(MMBT2907A) MAXIMUM RATINGS (Ta=25 unless otherwise noted)Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO 40 VCollector-Emitter Vo

www.msksemi.comMMBT2222A-MSSemiconductor CompianceSemiconductor Compiance TRANSISTOR (NPN)FEATURES Epitaxial planar die construction Complementary PNP Type available(MMBT2907A-MS)1. BASEMARKING:1P2. EMITTERSOT23 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted)Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO 40 VCollector-Em

DATA SHEET MMBT2222A GENERAL PURPOSE TRANSISTOR NPN CURRENT 600 mA POWER 300 mW FEATURES HIGH DC CURRENT GAIN EPITAXIAL PLANAR DIE CONSTRUCTION COMPLEMENTARY PNP YTPE AVAILABLE MMBT2907/A LEAD FREE AND HALOGEN-FREE MECHANICAL DATA CASESOT-23 TERMINALSOLDERABLE PER MIL-STD-220G, METHOD 208 APPROX. WEIGHT:0.008 GRAMS CASESOT-23 MAXIMUM RATINGS

MMBT2222/MMBT2222ANPN Silicon Epitaxial Planar TransistorSOT-23Features For switching and amplifier applications3121.B 2.E 3.CAbsolute Maximum Ratings (Ta=25 )Parameter Symbol Value UnitCollector Base Voltage MMBT2222 60VCBO VMMBT2222A 75Collector Emitter Voltage MMBT2222 30VCEO VMMBT2222A 40Emitter Base Voltage MMBT2222 5VEBO VMMBT2222A 6Collector

Jingdao Microelectronics co.LTD MMBT2222AMMBT2222ASOT-23NPN TRANSISTOR3FEATURES Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1MAXIMUM RATINGS (Ta=25 unless otherwise noted)2SymbolParameter Value Unit1.BASECollectorBase Voltage VCBO 75 V2.EMITTERCollectorEmitte

PXT2222ASOT-89-3 L Plastic-Encapsulate Transistors TRANSISTOR (NPN) SOT-89-3 LFEATURES 1. BASE Epitaxial planar die construction Complementary PNP Type available(PXT2907A) 2. COLLECTOR MARKING: 1P 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO E

MMBT2222A TRANSISTOR(NPN)SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBT2907 ; Complementary to MMBT2907 250mW; Power Dissipation of 250mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package

MMBT2222A SOT-23 NPN Transistors32 1.Base2.Emitter1 3.Collector ) Simplified outline(SOT-23) Mrarking Marking 1P Absolute Maximum Ratin gs Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO 70Collector - Emitter Voltage VCEO 40 VEmitter - Base Voltage VEBO 6Collector Current - Continuous IC 600 mAPower Dissipation PD

MMBT2222AAO3400SI2305MMBT2222A TRANSISTOR (NPN) FEATURES SOT-23 Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1BASE 2EMITTER 3COLLECTOR MARKING: 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage 75 V VCBO VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage

RoHS RoHSCOMPLIANT COMPLIANTMMST2222A NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moitsure Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package: SOT-323 Molding compound meets UL 94 V-0 flammabi

RoHS RoHSCOMPLIANT COMPLIANTMMBT2222A NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisure Sensitivity Level 1 High Conductance Surface mount package ideally Suited for Automatic Insertion Mechanical Data Package: SOT-23 Molding compound meets UL 94 V-0 flamm

RoHS RoHSCOMPLIANT COMPLIANTMMBT2222AQ NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 High Conductance Part no. with suffix Q means AEC-Q101 qualified Applications Switching and linear amplification Mechanical Data Case: SOT-23 Terminals: Tin plated lead

TH09/2479TH97/2478 IATF 0113686SGS TH07/1033www.eicsemi.comMMBT2222E / MMBT2222AE NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage MMBT2222E 60 VCBO V MMBT2222AE 75 Collector Emitter Voltage MMBT2222E 30 VCEO V MMBT2222AE 40 Emitter Base Voltage

MMBT2222A MMBT2222A SOT-23 Plastic-Encapsulate Transistors(NPN) General description SOT-23 Plastic-Encapsulate Transistors(NPN) FEATURES Complementary to MMBT2907A Power Dissipation of 300mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL: 94V-0 DEVICE MARKING CODE: Device Type Device Marking MMBT2222A 1P . Maximu

MMBT2222A TRANSISTOR (NPN) FEATURES SOT-23 Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1BASE 2EMITTER 3COLLECTOR MARKING: 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage 75 V VCBO VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Curren

FHS2222A-MENPN Transistor DESCRIPTIONSSOT-23 NPN NPN transistor in a SOT-23 Plastic Package. APPLICATIONSGeneral purpose application,switching. PIN ASSIGNMENT1 BASE2 EMITTER3 COLLECTOR Equivalent Circuit Name rule Name Addition

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDMMBT2222A FEATURES NPN Switching Transistor MAXIMUM RATINGS Characteristic Symbol UnitMMBT2222 MMBT2222A Collector-Emitter VoltageV 30 40 VdcCEO-Collector-Base VoltageV 60 75 VdcCBO-

MMBT2222ANPN GENERAL PURPOSE SWITCHING TRANSISTOR75Volts POWER 300mWattsVOLTAGEFEATURESNPN epitaxial silicon, planar design. Collector-emitter voltage VCE=40V.Collector current IC=0.6A.ansition frequency fT>250MHz @ TrIC=20mAdc, VCE=20Vdc, f=100MHz.In compliance with ER RoHS 2002/95/EC directives.MECHANICAL DATACase: SOT-23, Plastic3Terminals: S

MMBT2222ABIPOLAR TRANSISTOR (NPN)FEATURES Complementary to MMBT2907A Epitaxial planar die construction Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol Value UnitC

PXT2222A-P1PNPN Plastic-Encapsulate Transistors SOT-89-3LFea tures Epitaxial planar die construction Complementary PNP Type available(PXT2907A) 1.70 0.10.42 0.10.46 0.1MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 75 V Dimensions in millimetersVCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Vo

PXT2222ANPN Plastic-Encapsulate Transistors SOT-89-3LFea tures Epitaxial planar die construction Complementary PNP Type available(PXT2907A) 1.70 0.10.42 0.10.46 0.1MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 75 V Dimensions in millimetersVCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTORFeatures ASOT-23C Dim Min Max A0.37 0.51B C 1.20 1.40BTOP VIEWB ECD 2.30 2.50EGD0.89 1.03E0.45 0.60HG1.78 2.05KH2.80 3.00JJ0.013 0.10K0.903