2222A datasheet, аналоги, основные параметры
Наименование производителя: 2222A 📄📄
Маркировка: 1P
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 75 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.6 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 300 MHz
Статический коэффициент передачи тока (hFE): 100
Корпус транзистора: SOT23
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Аналоги (замена) для 2222A
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2222A даташит
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MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMBT2222A Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation, IC=600mA NPN General Operating and Storage Junction Temperature -55 C to +150 C Thermal resistance,Junction to Ambient 500oC/
pn2222abu pn2222ata pn2222atf pn2222atfr.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
pn2222arlrmg.pdf
PN2222, PN2222A General Purpose Transistors NPN Silicon http //onsemi.com Features Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO Vdc 1 PN2222 30 EMITTER PN2222A 40 Collector-Base Voltage VCBO Vdc PN2222 60 PN2222A 75 Emitter-Base Voltage VEBO Vdc PN2222 5.0 TO-92 PN2222A 6.0 CASE 29 STYLE
mps2222ag.pdf
MPS2222, MPS2222A MPS2222A is a Preferred Device General Purpose Transistors NPN Silicon http //onsemi.com Features Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO Vdc MPS2222 30 1 MPS2222A 40 EMITTER Collector-Base Voltage VCBO Vdc MPS2222 60 MPS2222A 75 Emitter-Base Voltage VEBO Vdc MPS2222 5.
mmbt2222l mmbt2222al smmbt2222al.pdf
MMBT2222L, MMBT2222AL, SMMBT2222AL General Purpose Transistors NPN Silicon www.onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and 1 PPAP Capable BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Valu
pn2222arlrpg.pdf
PN2222, PN2222A General Purpose Transistors NPN Silicon http //onsemi.com Features Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO Vdc 1 PN2222 30 EMITTER PN2222A 40 Collector-Base Voltage VCBO Vdc PN2222 60 PN2222A 75 Emitter-Base Voltage VEBO Vdc PN2222 5.0 TO-92 PN2222A 6.0 CASE 29 STYLE
p2n2222a-d.pdf
P2N2222A Amplifier Transistors NPN Silicon Features These are Pb--Free Devices* http //onsemi.com COLLECTOR 1 MAXIMUM RATINGS (TA =25 C unless otherwise noted) Characteristic Symbol Value Unit 2 BASE Collector--Emitter Voltage VCEO 40 Vdc Collector--Base Voltage VCBO 75 Vdc 3 Emitter--Base Voltage VEBO 6.0 Vdc EMITTER Collector Current -- Continuous IC 600 mAdc Total Devi
mmbt2222am3.pdf
MMBT2222AM3T5G NPN General Purpose Transistor The MMBT2222AM3T5G device is a spin-off of our popular SOT-23 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-723 surface mount http //onsemi.com package. This device is ideal for low-power surface mount applications where board space is at a premium. Features COLLECTOR 3 Reduce
pn2222ag.pdf
PN2222, PN2222A General Purpose Transistors NPN Silicon http //onsemi.com Features Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO Vdc 1 PN2222 30 EMITTER PN2222A 40 Collector-Base Voltage VCBO Vdc PN2222 60 PN2222A 75 Emitter-Base Voltage VEBO Vdc PN2222 5.0 TO-92 PN2222A 6.0 CASE 29 STYLE
kst2222a.pdf
May 2006 KST2222A tm NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1P 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipa
mmbt2222alt1g.pdf
MMBT2222L, MMBT2222AL, SMMBT2222AL General Purpose Transistors NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique 1 Site and Control Change Requirements BASE 2 MAXIMUM RATINGS EMITTER Rating Symbo
mmpq2222a.pdf
MMPQ2222A Preferred Device Quad General Purpose Transistor NPN Silicon http //onsemi.com 1 MAXIMUM RATINGS 16 2 15 Rating Symbol Value Unit 3 14 4 13 Collector-Emitter Voltage VCEO 40 Vdc 5 12 6 11 Collector-Base Voltage VCB 75 Vdc 7 10 Emitter-Base Voltage VEB 5.0 Vdc 8 9 Collector Current - Continuous IC 500 mAdc Four Transistors Equal Power Total Power Dissipation PD W
mmbt2222att1-d.pdf
MMBT2222ATT1 General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. http //onsemi.com Features COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 MAXIMUM RATINGS (TA = 25
mps2222arlrmg.pdf
MPS2222, MPS2222A MPS2222A is a Preferred Device General Purpose Transistors NPN Silicon http //onsemi.com Features Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO Vdc MPS2222 30 1 MPS2222A 40 EMITTER Collector-Base Voltage VCBO Vdc MPS2222 60 MPS2222A 75 Emitter-Base Voltage VEBO Vdc MPS2222 5.
pzt2222at1-d.pdf
PZT2222AT1 NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT--223 package which is designed for medium power surface mount http //onsemi.com applications. Features SOT--223 PACKAGE PNP Complement is PZT2907AT1 NPN SILICON TRANSISTOR The SOT--223 Package Can be
mmbt2222att1g.pdf
MMBT2222ATT1G, NSVMMBT2222ATT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. COLLECTOR 3 Features NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Chang
mbt2222adw1t1g.pdf
MBT2222ADW1T1G General Purpose Transistor NPN Silicon Features Moisture Sensitivity Level 1 http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant (3) (2) (1) MAXIMUM RATINGS Rating Symbol Value Unit Q1 Q2 Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 75 Vdc (4) (5) (6) Emitter-Base Voltage VEBO 6.0 Vdc Collector Cur
nsvmmbt2222att1g.pdf
MMBT2222ATT1G, NSVMMBT2222ATT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. COLLECTOR 3 Features NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Chang
mmbt2222att3g.pdf
MMBT2222ATT1G, NSVMMBT2222ATT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. COLLECTOR 3 Features NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Chang
mmbt2222alt3g.pdf
MMBT2222L, MMBT2222AL, SMMBT2222AL General Purpose Transistors NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique 1 Site and Control Change Requirements BASE 2 MAXIMUM RATINGS EMITTER Rating Symbo
mmbt2222am3t5g.pdf
MMBT2222AM3T5G NPN General Purpose Transistor The MMBT2222AM3T5G device is a spin-off of our popular SOT-23 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-723 surface mount www.onsemi.com package. This device is ideal for low-power surface mount applications where board space is at a premium. COLLECTOR Features 3 Reduces B
mmbt2222awt1g smmbt2222awt1g.pdf
MMBT2222AWT1G, SMMBT2222AWT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. Features AEC-Q101 Qualified and PPAP Capable SC-70 S Prefix for Automotive and Other Applications Requiring Uni
mbt2222adw1t1.pdf
MBT2222ADW1T1G General Purpose Transistor NPN Silicon Features Moisture Sensitivity Level 1 http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant (3) (2) (1) MAXIMUM RATINGS Rating Symbol Value Unit Q1 Q2 Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 75 Vdc (4) (5) (6) Emitter-Base Voltage VEBO 6.0 Vdc Collector Cur
mmbt2222att1g nsvmmbt2222att1g.pdf
MMBT2222ATT1G, NSVMMBT2222ATT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. COLLECTOR 3 Features NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Chang
mps2222arlrag.pdf
MPS2222, MPS2222A MPS2222A is a Preferred Device General Purpose Transistors NPN Silicon http //onsemi.com Features Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO Vdc MPS2222 30 1 MPS2222A 40 EMITTER Collector-Base Voltage VCBO Vdc MPS2222 60 MPS2222A 75 Emitter-Base Voltage VEBO Vdc MPS2222 5.
mps2222arlg.pdf
MPS2222, MPS2222A MPS2222A is a Preferred Device General Purpose Transistors NPN Silicon http //onsemi.com Features Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO Vdc MPS2222 30 1 MPS2222A 40 EMITTER Collector-Base Voltage VCBO Vdc MPS2222 60 MPS2222A 75 Emitter-Base Voltage VEBO Vdc MPS2222 5.
p2n2222ag.pdf
P2N2222A Amplifier Transistors NPN Silicon Features These are Pb--Free Devices* http //onsemi.com COLLECTOR 1 MAXIMUM RATINGS (TA =25 C unless otherwise noted) Characteristic Symbol Value Unit 2 BASE Collector--Emitter Voltage VCEO 40 Vdc Collector--Base Voltage VCBO 75 Vdc 3 Emitter--Base Voltage VEBO 6.0 Vdc EMITTER Collector Current -- Continuous IC 600 mAdc Total Devi
mbt2222adw1 nsvbt2222adw1.pdf
MBT2222ADW1, NSVBT2222ADW1 General Purpose Transistor NPN Silicon http //onsemi.com Features Moisture Sensitivity Level 1 NSV Prefix for Automotive and Other Applications Requiring (3) (2) (1) Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable Q1 Q2 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant (4) (5) (6) MAXIM
ffb2222a fmb2222a mmpq2222a.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
mmbt2222awt1g.pdf
MMBT2222AWT1G, SMMBT2222AWT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. Features AEC-Q101 Qualified and PPAP Capable SC-70 S Prefix for Automotive and Other Applications Requiring Uni
mmbt2222awt3g.pdf
MMBT2222AWT1G, SMMBT2222AWT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. Features AEC-Q101 Qualified and PPAP Capable SC-70 S Prefix for Automotive and Other Applications Requiring Uni
ksp2222abu ksp2222ata ksp2222atf.pdf
ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
nsvbt2222adw1t1g.pdf
MBT2222ADW1, NSVBT2222ADW1 General Purpose Transistor NPN Silicon http //onsemi.com Features Moisture Sensitivity Level 1 NSV Prefix for Automotive and Other Applications Requiring (3) (2) (1) Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable Q1 Q2 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant (4) (5) (6) MAXIM
pzt2222a.pdf
PZT2222A NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount www.onsemi.com applications. Features SOT-223 PACKAGE PNP Complement is PZT2907AT1 NPN SILICON TRANSISTOR The SOT-223 Package Can be Soldered
pn2222arlrag.pdf
PN2222, PN2222A General Purpose Transistors NPN Silicon http //onsemi.com Features Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO Vdc 1 PN2222 30 EMITTER PN2222A 40 Collector-Base Voltage VCBO Vdc PN2222 60 PN2222A 75 Emitter-Base Voltage VEBO Vdc PN2222 5.0 TO-92 PN2222A 6.0 CASE 29 STYLE
mmbt2222awt1-d.pdf
MMBT2222AWT1 General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. http //onsemi.com Features COLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3 Compliant 1 MAXIMUM RATINGS BASE Rating Symbo
pn2222a.pdf
UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 PN2222AL-AB3-R PN2222AG-AB3-R SOT-89 B C E Tape Reel PN2222AL-
mmbt2222a.pdf
UNISONIC TECHNOLOGIES CO., LTD MMBT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE 3 3 AMPLIFIER 1 1 2 2 FEATURES SOT-23 SOT-323 (JEDEC TO-236) * This device is for use as a medium power amplifier and switch requiring collector currents up to 600mA. 3 1 1 2 SOT-523 DFN1006-3 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing 1 2 3 MMBT
pzt2222a.pdf
UNISONIC TECHNOLOGIES CO., LTD PZT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. 1 SOT-223 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 PZT2222AL-AA3-R PZT2222AG-AA3-R SOT-223 B C E Tape Ree
pn2222a.pdf
PN2222A NPN Silicon Transistor Descriptions PIN Connection General purpose application C Switching application Features B Low Leakage current Low collector saturation voltage enabling E low voltage operation Complementary pair with PN2907A TO-92 Ordering Information Type NO. Marking Package Code PN2222A PN2222A TO-92 Absolute maximum rat
stn2222a.pdf
STN2222A NPN Silicon Transistor Descriptions PIN Connection General purpose application C Switching application B Features Large collector current Low collector saturation voltage E Complementary pair with STN2907A TO-92 Ordering Information Type NO. Marking Package Code STN2222A STN2222A TO-92 Year & Week Code Absolute maximum
stn2222as.pdf
STN2222AS NPN Silicon Transistor Descriptions General purpose application COLLECTOR Switching application 3 3 1 Features BASE Large collector current Low collector saturation voltage 2 EMITTER Complementary pair with STN2907AS SOT-23 Ordering Information Part Number Marking Package XA STN2222AS SOT-23 * Device
stn2222asf.pdf
STN2222ASF NPN Silicon Transistor Descriptions PIN Connection General purpose application 3 Switching application 1 Features 2 Large collector current SOT-23F Low collector saturation voltage Complementary pair with STN2907ASF Ordering Information Type NO. Marking Package Code XA STN2222ASF SOT-23F Device Code Year&
sbt2222a.pdf
SBT2222A NPN Silicon Transistor Descriptions General purpose application Switching application COLLECTOR 3 3 Features 1 Low Leakage current BASE Low collector saturation voltage enabling low voltage operation 2 Complementary pair with SBT2907A EMITTER SOT-23 Ordering Information Part Number Marking * Package 1P SBT2222A SOT-2
2n2222aub.pdf
Product Bulletin JANTX, JANTXV, 2N2222AUB September 1996 Surface Mount NPN General Purpose Transistor Type JANTX, JANTXV, 2N2222AUB Feature Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 V Ceramic surface mount package Collector-Emitter Voltage. . . . . . .
cmbt2222a.pdf
CMBT2222A NPN Silicon Planar Epitaxial Transistors Pin configuration 1. BASE 2. EMITTER 3. COLLECTOR 3 1 2 Unit inch (mm) Absolute Maximum Ratings Symbol Value UNIT Collector-base voltage (open emitter) VCBO max 75 V Collector-emmitter voltage (open base) VCEO max 40 V Emmitter base voltage (open collector) VEBO max 6.0 V IC Collector current (d.c.) max 600 mA Total
2n2222ac1a.pdf
SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2222AC1 High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage 75V VCEO Collector Emitter Voltage 50V VE
2n2222ac3a 2n2222ac3b 2n2222ac3c.pdf
SILICON SWITCHING NPN TRANSISTOR 2N2222AC3A, 2N2222AC3B 2N2222AC3C High Speed Saturated Switching Hermetic LCC3 Ceramic package. Variant B to MIL-PRF-19500/255 outline Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage 75V VCEO Collector Emitter Voltage 50V VEBO Emitter Bas
2n2222ac1b.pdf
SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2222AC1 High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage 75V VCEO Collector Emitter Voltage 50V VE
mmbt2222at.pdf
MMBT2222AT NPN Silicon General Purpose Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-523 Epitaxial Planar Die Construction Complementary PNP Type Available(MMBT2907FW) Ideal for Medium Power Amplification and Switching MARKING CODE 1P PACKAGE INFORMATION Package MPQ Leader Size Millim
mps2222a.pdf
MPS2222A NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 COLLECTOR 3 2 BASE FEATURES 1 . Epitaxial Planar Die Construction 1 EMITTER 2 3 . Complementary PNP Type Available (MPS2907A) . Ideal for Medium Power Amplification and Switching MAXIMUM RATINGS RATING SYMBOL VALUE
mmbt2222a.pdf
MMBT2222A NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES A COLLECTOR L Epitaxial Planar Die Construction 3 3 3 Complementary PNP Type Available S Top View B (MMBT2907A) 1 1 1 2 Ideal for Medium Power Amplification and BASE 2 Switching V G 2 EMITTER C H J D K MAXIMUM
mmdt2222a.pdf
MMDT2222A NPN Silicon Elektronische Bauelemente Multi-Chip Transistor RoHS Compliant Product SOT-363 o .055(1.40) 8 * Features .047(1.20) 0o .026TYP (0.65TYP) .021REF (0.525)REF Power dissipation .053(1.35) O .096(2.45) .045(1.15) PCM 0.15 W (Tamp.= 25 C) .085(2.15) Collector current .018(0.46) .010(0.26) C 1 B2 E2 ICM 0.6 A .014(0.35) .006(0.15) .006(0.15)
mmbt2222aw.pdf
MMBT2222AW NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURE Complementary PNP Type Available(MMBT2907AW) A L Epitaxial Planar Die Construction 3 3 Ideal for Medium Power Amplification and Switching Top View C B 1 1 2 2 K E D MARKING CODE H J F G MM
pzt2222a.pdf
PZT2222A NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product SOT-223 C 1. BASE 2. COLLECTOR FEATURES 3. EMITTER E C Power dissipation B P CM 1 W Tamb=25 Collector current I CM 0.6 A Collector-base voltage V(BR)CBO 75 V Operating and stora
mmbt2222a.pdf
MMBT2222A Taiwan Semiconductor 300mW, NPN Small Signal Transistor FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement VCBO 75 V High surge current capability VCEO 40 V Compliant to RoHS directive 2011/65/EU and VEBO 6 V in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21
tk2222attd03.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors C TK2222ATTD03 TRANSISTOR WBFBP-03A (1.6 1.6 0.5) TOP unit mm DESCRIPTION NPN Epitaxial planar Silicon Transistor B E FEATURES 1. BASE C Complementary PNP Type available (TK2907ATTD03) 2. EMITTER 3. COLLECTOR BACK PPLICATION general purpose amplifier, switching
mmst2222a.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 MMST2222A TRANSISTOR ( NPN ) FEATURES Epitaxial planar die construction Complementary PNP Type available(MMST2907A) 1. BASE MARKING K3P 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VC
mmbt2222am.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate Transistors MMBT2222AM TRANSISTOR (NPN) SOT-723 FEATURES 3 3 Epitaxial planar die construction Complementary PNP Type available(MMBT2907AM) 1 1. BASE 2 2.EMITTER MARKING 1P 3.COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted ) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V
mmbt2222at.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors MMBT2222AT TRANSISTOR (NPN) FEATURES SOT 523 Complementary to MMBT2907AT Small Package MARKING 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE VCBO Collector-Base Voltage 75 V 2. EMITTER VCEO Collector-Emitter Voltage 40 V 3. COLL
mps2222a.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 MPS2222A TRANSISTOR (NPN ) 1. EMITTER FEATURE 2. BASE Complementary NPN Type available (MPS2907A) 3. COLLECTOR Equivalent Circuit MPS 2222A
pxt2222a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors PXT2222A TRANSISTOR (NPN) SOT-89-3L FEATURES 1. BASE Epitaxial planar die construction Complementary PNP Type available(PXT2907A) 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO C
mmbt2222a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT2222A TRANSISTOR (NPN) 1. BASE FEATURES 2.EMITTER Epitaxial planar die construction 3.COLLECTOR Complementary PNP Type available(MMBT2907A) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO 40
pzt2222a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors PZT2222A TRANSISTOR (NPN) SOT-223 FEATURES Epitaxial planar die construction Complementary PNP Type available (PZT2907A) 1. BASE MARKING 2. COLLECTOR 3. EMITTER Solid dot = Green molding compound device, if none,the normal device. MAXIMUM RATINGS (Ta=25 unless otherwis
ktn2222ae.pdf
SEMICONDUCTOR KTN2222AE TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B Low Leakage Current D DIM MILLIMETERS ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. 2 _ + A 1.60 0.10 Low Saturation Voltage _ + B 0.85 0.10 3 1 _ C 0.70 0.10 + VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. D 0.27+0.10/-0.05 _ Complementary
ktn2222s ktn2222as.pdf
SEMICONDUCTOR KTN2222S/AS TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS _ + A 2.93 0.20 Low Leakage Current B 1.30+0.20/-0.15 ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 Low Saturation Voltage E 2.40+0.30/-0.20 1 G 1.90 VCE(sat)=0.3V(Max.) ; IC=150mA,
kn2222as s.pdf
SEMICONDUCTOR KN2222S/AS TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES L B L DIM MILLIMETERS Low Leakage Current _ + 2.93 0.20 A B 1.30+0.20/-0.15 ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. C 1.30 MAX 2 Low Saturation Voltage 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. 1 G 1
2n2222aubc.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 DEVICES LEVELS JANSM 3K Rads (Si) 2N2221A 2N2222A JANSD 10K Rads (Si) 2N2221AL 2N2222AL JANSP 30K Rads (Si) 2N2221AUA 2N2222AUA
mmbt2222agh.pdf
Zowie Technology Corporation General Purpose Transistor NPN Silicon Halogen-free type Lead free product COLLECTOR 3 3 BASE 1 MMBT2222AGH 1 2 2 SOT-23 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 75 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current-Continuous IC 600 mAdc THERMAL CHARACTERISTICS Char
mmst2222a.pdf
MMST2222A TRANSISTOR(NPN) SOT-323 FEATURES Epitaxial planar die construction 1. BASE Complementary PNP Type available(MMST2907A) 2. EMITTER MARKING K3P 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO 40 V Collector-Emitter Voltage VEBO 6 V Emitter-Base Voltage IC Collector Curren
pxt2222a.pdf
PXT2222A TRANSISTOR (NPN) SOT-89 FEATURES 1. BASE Epitaxial planar die construction Complementary PNP Type available(PXT2907A) 2. COLLECTOR 1 2 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V Collector Current -Continuo
mmbt2222a.pdf
MMBT2222A TRANSISTOR(NPN) SOT-23 FEATURES Epitaxial planar die construction 1. BASE Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO 40 V Collector-Emitter Voltage VEBO 6 V Emitter-Base Voltage IC Collector Current -C
mmst2222a.pdf
MMST2222A SOT-323 Transistor (NPN) SOT-323 1. BASE 2. EMITTER 3. COLLECTOR Features Epitaxial planar die construction Complementary PNP Type available(MMST2907A) MARKING K3P Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO 40 V Collector-Emitter Voltage
mps2222a.pdf
MPS2222A TO-92 Transistor (NPN) TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Complementary NPN Type available (MPS2907A) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V Dimensions in inches and (millimeters) IC Collector Current -Continuou
mmmbt2222a sot-23.pdf
MMBT2222A SOT-23 Transistor(NPN) SOT-23 1. BASE 2.EMITTER 3.COLLECTOR Features Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) MARKING 1P Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emit
mmbt2222alt1.pdf
MMBT2222ALT1 NPN General Purpose Amplifier 1. BASE 2. EMITTER 3. COLLECTOR FEATURES A SOT-23 Dim Min Max Epitaxial planar die construction. A 2.70 3.10 E B 1.10 1.50 Complementary PNP type available K B C 1.0 Typical MMBT2907A. D 0.4 Typical E 0.35 0.48 J D Ultra-small surface mount package. G 1.80 2.00 G H 0.02 0.1 J 0.1 Typical H K 2.20 2.60 APPLICATIO
pxt2222a.pdf
PXT2222A SOT-89 Transistor(NPN) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 3. EMITTER 4.4 2 1.6 1.8 1.4 1.4 3 Features 2.6 4.25 2.4 3.75 Epitaxial planar die construction 0.8 MIN Complementary PNP Type available(PXT2907A) 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millime
pzt2222a.pdf
PZT2222A SOT-223 Transistor(NPN) 1. BASE SOT-223 2. COLLECTOR 1 3. EMITTER Features Epitaxial planar die construction Complementary PNP Type available (PZT2907A) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V Dimensions in inches and
3dk2222a.pdf
3DK2222A(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 4.45 2. BASE 5.21 3. COLLECTOR 4.32 2.92 5.33 Features MIN Epitaxial planar die construction 3.43 MIN MAXIMUM RATINGS (TA=25 unless otherwise noted) 2.41 2.67 Symbol Parameter Value Units 3.18 2.03 4.19 VCBO Collector-Base Voltage 75 V 2.67 1.14 VCEO Collector-Emitter Voltage 40 V 1.40 2.03 2.67
3dk2222a sot-23.pdf
3DK2222A SOT-23 Transistor(NPN) 1. BASE SOT-23 2.EMITTER 3.COLLECTOR Features Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) MARKING 1P1 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO 40 V Collector-Emitter Voltage VEBO 6 V
wtm2222a.pdf
WTM2222A NPN Epitaxial Planar Transistors SOT-89 P b Lead(Pb)-Free 1 2 1. BASE Features 3 2. COLLECTOR 3. EMITTER * Low Collector Saturation Voltage * High Speed Switching * For Complementary Use With PNP Type WTM2907A ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Limits Unit VCBO V Collector-Base Voltage 75 VCEO V Collector-Emitter Voltage 40 VEBO V Emitter-Base Vo
mmbt2222at.pdf
MMBT2222AT COLLECTOR Plastic-Encapsulate Transistors 3 3 NPN Silicon 1 2 1 BASE P b Lead(Pb)-Free SC-89 2 EMITTER (SOT-523F) MAXIMUM RATINGS Value Rating Symbol Unit 40 Collector-Emitter Voltage V CEO Vdc 75 Collector-Base Voltage VCBO Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current-Continuous IC 600 mAdc THERMAL CHARACTERISTICS Characteristics Symbol Unit Ma
mbt2222adw.pdf
MBT2222ADW Dual General Purpose Transistors 2 1 3 6 5 4 NPN+NPN Silicon 1 2 3 4 5 6 SOT-363(SC-88) NPN+NPN Value VCEO (1) 150 833 T ,Tstg -55 to+150 J MBT2222ADW=XX u 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint WEITRON http //www.weitron.com.tw MBT2222ADW ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise not
mmbt2222aw.pdf
MMBT2222AW 3 1 2 SOT-323(SC-70) Value VCEO 150 833 T ,Tstg -55 to+150 J MMBT2222AW=P1 (1) u 1. Pulse Test Pulse Width 300us, Duty Cycle 2.0% WEITRON http //www.weitron.com.tw MMBT2222AW ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS(1) DC Current Gain - (IC=0.1 mAdc, VCE=10 Vdc) 35 - (
pzt2222a.pdf
PZT2222A NPN Silicon Planar Epitaxial Transistor COLLECTOR 2, 4 SOT-223 4 1. BASE BASE 2.COLLECTOR 1 1 3.EMITTER 2 4.COLLECTOR 3 3 EM ITTER ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO 40 Vdc Collector-Base Voltage VCBO Vdc 75 Emitter-Base Voltage VEBO Vdc 6.0 Collector Current (DC) IC(DC) Adc 0.6 1.5 Total Device D
mmbt2222awt1.pdf
FM120-M WILLAS THRU MMBT2222AWT1 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistors SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to NPN Silic
mmbt2222adw1t1.pdf
FM120-M MMBT2222ADW1T1 WILLAS THRU Dual General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to o
pxt2222a.pdf
FM120-M WILLAS THRU PXT2222A SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H SOT-89 TRANSISTOR (NPN) Low profile surface mounted
mmbt2222att1.pdf
FM120-M WILLAS THRU MMBT2222ATT1 General Purpose T BARRIER RECTIFIERS -20V- 200V ransistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY SOD-123 PACKAGE Pb Free Product Package outline Features Batch process d NPN Siliconeesign, excellent power dissipation offers better reverse l akage current and thermal resistance. SOD-123H Low profile surface mounted application in order
hmbt2222a.pdf
Spec. No. HE6822 HI-SINCERITY Issued Date 1993.06.30 Revised Date 2010.08.06 MICROELECTRONICS CORP. Page No. 1/5 HMBT2222A NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT2222A is designed for general purpose amplifier and high-speed switching, medium-power switching applications. SOT-23 Features High frequency current gain High Speed Switching Abs
hm2222a.pdf
Spec. No. HE9521 HI-SINCERITY Issued Date 1997.06.18 Revised Date 2008.08.04 MICROELECTRONICS CORP. Page No. 1/5 HM2222A NPN EPITAXIAL PLANAR TRANSISTOR Description The HM2222A is designed for general purpose amplifier and high speed, medium-power switching applications. Features SOT-89 Low collector saturation voltage High speed switching For co
hpn2222a.pdf
Spec. No. HE6118 HI-SINCERITY Issued Date 1992.10.23 Revised Date 2004.12.15 MICROELECTRONICS CORP. Page No. 1/5 HPN2222A NPN EPITAXIAL PLANAR TRANSISTOR Description The HPN2222A is designed for general purpose amplifier and high speed, medium-power switching applications. Features TO-92 Low Collector Saturation Voltage High Speed Switching For Complementary U
aft2222a.pdf
AFT2222A Alfa-MOS Technology NPN General Purpose Amplifier Features This device is designed as a general purpose amplifier and switch. Pin Description ( SOT-23 ) Ordering Information Part Ordering No. Part Marking Package Unit Quantity AFT2222AT1S23RG 1P SOT-23 Tape & Reel 3000 EA Absolute Maximum Ratings (TA=25 Unless otherwise noted) Symbol Parameter Value Unit VCEO
mps2222a.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors TO-92 MPS2222A TRANSISTOR (NPN ) 1. EMITTER FEATURE Complementary NPN Type available (MPS2907A) 2. BASE 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units 1 2 3 VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emi
mmbt2222a.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR (NPN) SOT-23 FEATURES Epitaxial planar die construction 1. BASE Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V
pzt2222al3.pdf
Spec. No. C825L3 Issued Date 2006.04.25 CYStech Electronics Corp. Revised Date Page No. 1/4 NPN Epitaxial Planar Transistor PZT2222AL3 Features High current, max. 600mA Low voltage, max. 40V Pb-free package Applications Switching and linear amplification Symbol Outline PZT2222AL3 SOT-223 C E C B Base B C Collector E Emitter
btn2222a3.pdf
Spec. No. C227A3 Issued Date 2003.03.26 CYStech Electronics Corp. Revised Date 2014.04.25 Page No. 1/8 General Purpose NPN Epitaxial Planar Transistor BTN2222A3 Description Low collector output capacitance. High current capability Low leakage current High cutoff frequency Pb-free lead plating and halogen-free package Symbol Outline BTN2222
btn2222an3.pdf
Spec. No. C227N3 Issued Date 2003.06.11 CYStech Electronics Corp. Revised Date 2013.10.31 Page No. 1/8 General Purpose NPN Epitaxial Planar Transistor BTN2222AN3 Description The BTN2222AN3 is designed for general purpose amplifier applications. It is housed in the SOT-23 package which is designed for low power surface mount applications. Low VCE(sat) Lo
mmbt2222a.pdf
Spec. No. C203N3 Issued Date 2002.05.11 CYStech Electronics Corp. Revised Date 2010.11.12 Page No. 1/8 General Purpose NPN Epitaxial Planar Transistor MMBT2222A Description The MMBT2222A is designed for using in driver stage of AF amplifier and general purpose switching application. High I , I = 0.6A. C(Max) C(Max) Low V , Typ. V = 0.2V at I /I = 500mA/
btn2222al3.pdf
Spec. No. C227L3 Issued Date 2004.03.17 CYStech Electronics Corp. Revised Date Page No. 1/4 General Purpose NPN Epitaxial Planar Transistor BTN2222AL3 Description Low collector output capacitance. High current capability Low leakage current High cutoff frequency Complementary to BTP2907AL3 Symbol BTN2222AL3 B Base C Collector E
mmbt2222a.pdf
MMBT2222A Rev.G Aug.-2018 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features 600mA Collector currents up to 600 mA. / Applications General purpose amplifier. / Equivalent Circuit
2n2222 2n2222a.pdf
2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Sy
mmbt2222 mmbt2222a.pdf
MMBT2222 / MMBT2222A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage MMBT2222 60 VCBO V MMBT2222A 75 Collector Emitter Voltage MMBT2222 30 VCEO V MMBT2222A 40 Emitter Base Voltage MMBT2222 5 VEBO V MMBT2222A 6 Collector Curr
lmbt2222alt1g lmbt2222alt3g.pdf
LMBT2222ALT1G S-LMBT2222ALT1G General Purpose Transistors NPN Silicon 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT23(TO-236) qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Dev
lmbt2222awt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are LMBT2222AWT1G housed in the SOT 323/SC 70 package which S-LMBT2222AWT1G is designed for low power surface mount applications. We declare that the material of product 3 compliance with RoHS requirements. S- Prefix for Automotive a
lmbt2222adw1t1g.pdf
LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Silicon LMBT2222ADW1T1G S-LMBT2222ADW1T1G We declare that material of product compliance with ROHS requirements. S- Prefix for Automotive and Other Applications Requiring 6 5 Unique Site and Control Change Requirements; 4 AEC-Q101 Qualified and PPAP Capable. 1 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit SC-
lmbt2222att1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistor LMBT2222ATT1G NPN Silicon S-LMBT2222ATT1G These transistors are designed for general purpose amplifier applications. They are housed in the SC-89 package which is designed for low power surface mount applications. Features compliance with RoHS requirements. We declare that the material of product S- Prefix for Automotive
lmbt2222att1g lmbt2222att3g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistor LMBT2222ATT1G NPN Silicon S-LMBT2222ATT1G These transistors are designed for general purpose amplifier applications. They are housed in the SC-89 package which is designed for low power surface mount applications. Features compliance with RoHS requirements. We declare that the material of product S- Prefix for Automotive
lmbt2222alt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LMBT2222ALT1G FEATURES S-LMBT2222ALT1G 1) We declare that the material of product compliant with RoHS requirements and Halogen Free. 3 2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 2 SOT-23 DEVICE MARKING AN
lmbt2222adw1t1g lmbt2222adw1t3g.pdf
LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Silicon LMBT2222ADW1T1G S-LMBT2222ADW1T1G We declare that material of product compliance with ROHS requirements. S- Prefix for Automotive and Other Applications Requiring 6 5 Unique Site and Control Change Requirements; 4 AEC-Q101 Qualified and PPAP Capable. 1 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit SC-
bt2222a.pdf
3DG2222A(BT2222A) NPN PCM TC 75 300 mW ICM 600 mA Tjm 150 Tstg -55 150 V(BR)CBO ICB 0.1mA 75 V V(BR)CEO ICE 0.1mA 40 V V(BR)EBO IEB 0.1mA 6.0 V ICBO VCB=10V 1.0 A IEBO VCB=4V 1.0 A IC=0.5A VCEsat 0.6 V IB=0.05A VCE=10V
kmbt2222a.pdf
SMD Type Transistors Product specification KMBT2222A SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features High current (max. 600 mA) Low voltage (max.40 V). 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 75 V Collector-emitter voltag
mps2222a.pdf
SEMICONDUCTOR MPS2222A TECHNICAL DATA General Purpose Transistor B C NPN Silicon FEATURE DIM MILLIMETERS Complementary PNP Type available (MPS2907A) A 4.70 MAX E B 4.80 MAX G C 3.70 MAX D D 0.55 MAX E 1.00 MAXIMUM RATINGS (TA=25 unless otherwise noted) F 1.27 G 0.85 H 0.45 _ Symbol Parameter Value Units H J 14.00 0.50 + L 2.30 F F M 0.51 MAX VCBO Collector-Base
2n2222ae.pdf
SEMICONDUCTOR 2N2222AE TECHNICAL DATA General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier 3 applications. They are housed in the SC-89 package which is designed for low power surface mount applications. 1 Features 2 compliance with RoHS requirements. We declare that the material of product SC-89 ORDERING INFORMATION COLLECTOR
ffb2222ad.pdf
SEMICONDUCTOR FFB2222AD TECHNICAL DATA Dual General Purpose Switching Transistors NPN Silicon We declare that material of product compliance with ROHS requirements. 6 5 4 1 2 3 MAXIMUM RATINGS SOT-363 (SC-88) Rating Symbol Value Unit Collector Emitter Voltage VCEO 40 Vdc Collector Base Voltage VCBO 75 Vdc Emitter Base Voltage VEBO 6.0 Vdc (3) (2) (1) Collector Cur
mmbt2222altg.pdf
MMBT2222LTG,MMBT2222ALTG General Purpose Transistors Features Package outline Pb-Free Package May be Available. The G-Suffix Denotes a Pb-Free Lead Finish 3 Ordering Information 1 Device Package Shipping MMBT2222LTG SOT 23 3000/Tape & Reel 2 MMBT2222ALTG SOT 23 3000/Tape & Reel SOT 23 Maximum Ratings Rating Symbol 2222 2222A Unit 3 COLLECTOR Collector Emitter Vo
2n2222as.pdf
SEMICONDUCTOR 2N2222AS TECHNICAL DATA General Purpose Transistor NPN Silicon 3 compliance with RoHS requirements. We declare that the material of product 2 1 ORDERING INFORMATION SOT 23 Device Maring Shipping 2N2222AS 1P 3000 / Tape & Reel COLLECTOR 3 1 MAXIMUM RATINGS (TA = 25 C) BASE Rating Symbol Max Unit 2 Collector-Emitter Voltage VCEO 40 Vdc EMITTER Col
2n2222au.pdf
SEMICONDUCTOR 2N2222AU TECHNICAL DATA General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC-323/SC-70 package which 3 is designed for low power surface mount applications. Features 1 2 compliance with RoHS requirements. We declare that the material of product SC-70 / SOT 323 ORDERING INFO
kzt2222a.pdf
SMD Type Transistors NPN Transistors PZT2222A (KZT2222A) Unit mm SOT-223 6.50 0.2 3.00 0.1 Features 4 Epitaxial planar die construction Complementary to PZT2907A 1 2 3 0.250 2.30 (typ) Gauge Plane 1.Base 2.Collector 0.70 0.1 3.Emitter 4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VC
kxt2222a.pdf
SMD Type Transistors NPN Transistors PXT2222A (KXT2222A) 1.70 0.1 Features Epitaxial planar die construction Complementary to PXT2907A 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 75 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collector
mmst2222a.pdf
SMD Type Transistors NPN Transistors MMST2222A (KMST2222A) Features Epitaxial planar die construction Complementary to MMST2907A 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 75 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 600
mmbt2222at.pdf
SMD Type Transistors NPN Transistors MMBT2222AT (KMBT2222AT) SOT-523 U nit m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15 0.05 Features 2 1 Small Package Complementary to MMBT2907AT 3 0.3 0.05 +0.1 0.5-0.1 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 75 Coll
pxt2222a.pdf
SMD Type Transistors NPN Transistors PXT2222A (KXT2222A) 1.70 0.1 Features Epitaxial planar die construction Complementary to PXT2907A 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 75 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collector
mmbt2222a.pdf
D e s st s NPN Transistors MMBT2222A (KMBT2222A) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9-0.1 ) 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 70 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collec
fzt2222a.pdf
SMD Type Transistors NPN Transistors FZT2222A (KZT2222A) Unit mm SOT-223 6.50 0.2 3.00 0.1 4 Features Collector Current Capability IC=0.6A Collector Emitter Voltage VCEO=40V Complementary to FZT2907A 1 2 3 0.250 2.30 (typ) 0.84 (max) Gauge Plane 0.66 (min) 1.Base C 2.Collector 3.Emitter 4.60 (typ) B 4.Collector E Absolute Maximum Ratings Ta
kmbt2222at.pdf
SMD Type Transistors NPN Transistors MMBT2222AT (KMBT2222AT) SOT-523 U nit m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15 0.05 Features 2 1 Small Package Complementary to MMBT2907AT 3 0.3 0.05 +0.1 0.5-0.1 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 75 Coll
kmbt2222a.pdf
SMD Type Transistors NPN Switching Transistor KMBT2222A SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features High current (max. 600 mA) Low voltage (max.40 V). 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 75 V Collector-emitter vol
pzt2222a.pdf
SMD Type Transistors NPN Transistors PZT2222A (KZT2222A) Unit mm SOT-223 6.50 0.2 3.00 0.1 Features 4 Epitaxial planar die construction Complementary to PZT2907A 1 2 3 0.250 2.30 (typ) Gauge Plane 1.Base 2.Collector 0.70 0.1 3.Emitter 4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VC
kmst2222a.pdf
SMD Type Transistors NPN Transistors MMST2222A (KMST2222A) Features Epitaxial planar die construction Complementary to MMST2907A 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 75 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 600
2n2221a 2n2221al 2n2221aua 2n2221aub 2n2222a 2n2222al 2n2222aua 2n2222aub.pdf
Radiation Hardened NPN Silicon Switching Transistors 2N2221A, 2N2221AL, 2N2221AUA, 2N2221AUB 2N2222A, 2N2222AL, 2N2222AUA, 2N2222AUB Features Qualified to MIL-PRF-19500/255 Levels Commerical JANS JANSM-3K Rads (Si) JANSD-l0K Rads (Si) JANSP-30K Rads (Si) JANSL-50K Rads (Si) JANSR-l00K Rads (Si) TO-18 (TO-206AA), Surface mount UA & UB Packages Absolute Maximum Ra
mmbt2222a.pdf
MMBT2222A NPN GENERAL PURPOSE SWITCHING TRANSISTOR 40 Volt POWER 225 mWatt VOLTAGE FEATURES NPN epitaxial silicon, planar design 0.120(3.04) 0.110(2.80) Collector-emitter voltage VCE = 40V Collector current IC = 600mA Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard 0.056(1.40) 0.047(1.20) 0.079(2.00) 0.008(0.20) 0.070
mmbt2222aw.pdf
MMBT2222AW NPN GENERAL PURPOSE SWITCHING TRANSISTOR 40 Volt POWER 150 mWatt VOLTAGE FEATURES NPN epitaxial silicon, planar design Collector-emitter voltage VCE = 40V Collector current IC = 600mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA Case SOT-323, Plastic Te
cht2222agp-a.pdf
CHENMKO ENTERPRISE CO.,LTD CHT2222AGP-A SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 FEATURE * Small surface mounting type. (SOT-23) * High current (Max.=600mA). * Suitable for high packing density. * Low voltage (Max.=40V) . (1) * High saturati
cht2222agp.pdf
CHENMKO ENTERPRISE CO.,LTD CHT2222AGP SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 FEATURE * Small surface mounting type. (SOT-23) * High current (Max.=600mA). * Suitable for high packing density. * Low voltage (Max.=40V) . (1) * High saturation
mmbt2222a-g.pdf
Small Signal Transistor MMBT2222A-G (NPN) RoHS Device Features SOT-23 -NPN silicon epitaxial planar transistor for switching and amplifier application. 0.118(3.00) 0.110(2.80) 3 Mechanical data 0.055(1.40) 0.047(1.20) -Case SOT-23, molded plastic. 1 2 0.079(2.00) 0.071(1.80) -Terminals solderable per MIL-STD-750, method 2026. 0.006(0.15) 0.003(0.08) -Approx. weight 0
mmbt2222a-hf.pdf
Small Signal Transistor MMBT2222A-HF (NPN) RoHS Device Halogen Free Features SOT-23 -NPN silicon epitaxial planar transistor for switching and amplifier application. 0.118(3.00) 0.110(2.80) 3 Mechanical data 0.055(1.40) 0.047(1.20) -Case SOT-23, molded plastic. 1 2 0.079(2.00) 0.071(1.80) -Terminals solderable per MIL-STD-750, method 2026. 0.006(0.15) 0.003(0.08) -Ap
mmst2222a-g.pdf
General Purpose Transistor MMST2222A-G (NPN) RoHS Device Features -Power dissipation SOT-323 O PCM 0.2W (TA=25 C) -Collector current 0.087 (2.20) 0.070 (1.8) ICM 0.6A 3 -Collector-base voltage 0.054 (1.35) 0.045 (1.15) V(BR)CBO 75V 1 2 -Operating and storage junction temperature range 0.056 (1.40) O O TJ, TSTG -55 C to +150 C 0.047 (1.20) 0.006 (0.15) Marking
dmbt2222a.pdf
DC COMPONENTS CO., LTD. DMBT2222A DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose switching and amplifier applications. SOT-23 .020(0.50) .012(0.30) Pinning 1 = Base 3 2 = Emitter .063(1.60) .108(0.65) .055(1.40) .089(0.25) 3 = Collector 1 2 Absolute Maximum Ratings(TA=25oC) .045(1.15) .034(0.
ksp2222a.pdf
TRANSISTOR KSP2222A MAIN CHARACTERISTICS FEATURES IC 500mA Epitaxial silicon VCEO 27V High switching speed VCBO 42V RoHS RoHS product PC 625mW APPLICATIONS High frequency switch power supply Commonly power amplifier circuit High frequency
gstmmbt2222a.pdf
GSTMMBT2222A NPN General Purpose Transistors Product Description Features This device is designed as a general purpose Lead(Pb)-Free amplifier and switch. Packages & Pin Assignments GSTMMBT2222AF(SOT-23) Pin Description 1 Base 2 Emitter 3 Collector Marking Information P/N Package Part Marking GSTMMBT2222AF SOT-23 1P Ordering Information GS P/N GSTMMBT2222A F Pb Fre
kbt2222ac.pdf
KBT2222AC NPN Silicon Transistor 2018.03.28 2018.03.28 2018.03.28 2018.03.28 1 000 2018.03.28 AUK Dalian 1 KBT2222AC NPN Silicon Transistor Descriptions General purpose application
3dg2222a.pdf
2N2222A(3DG2222A) NPN /SILICON NPN TRANSISTOR Purpose General purpose amplifier. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 75 V CBO V 40 V CEO V 6.0 V EBO I 600 mA C P 625 mW C T 150 j T -55 150 stg /Electrical characteristics(
pt23t2222a.pdf
PT23T2222A NPN switching transistor Description 3 - Collector NPN switching transistor in a SOT-23 plastic package. 1 - Base 2 - Emitter Feature 3 High current (max. 600 mA) Lead finish 100% matte Sn(Tin) Mounting position Any Qualified max reflow temperature 260 Device meets MSL 1 requirements 1 2 Pure tin plating 7 17 um Fig.1 S
mmbt2222 mmbt2222a.pdf
MMBT2222/MMBT2222A FEATURES FEATURES FEATURES FEATURES NPN Switching Transistor MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Symbol Unit Characteristic MMBT2222 MMBT2222A Collector-Emitter Voltage V 30 40 Vdc CEO Collector-Base Voltage V 60 75 Vdc CBO Emitter-Base Voltage V 5.0 6.0 Vdc EBO Collector Current-Continuous Ic 600 600 mAdc THERMAL CHARACTERISTI
mmdt2222a.pdf
MMDT2222A NPN Silicon Epitaxial Planar Transistor for general purpose and switching applications 6 5 4 TR2 TR1 1 2 3 1. Emitter 2. Base 3. Collector 4. Emitter 5. Base 6. Collector Simplified outline(SOT-363) O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 75 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V
mmbt2222aw.pdf
MMBT2222AW NPN General Purpose Transistor 3 2 1.Base 2.Emitter 3.Collector 1 Features Simplified outline(SOT-323) General purpose transistor. 3.COLLECTOR 1.BASE 2.EMITTER Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-emitter voltage VCEO 40 V Collector-base voltage VCBO 75 V Emitter-base voltage VEBO 6.0 V Collector current IC 600 mA Total Devic
mmbt2222a.pdf
R UMW UMW MMBT2222A SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT2222A TRANSISTOR (NPN) FEATURES 1. BASE Epitaxial planar die construction 2. EMITTER Complementary PNP Type available(MMBT2907A) 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO 40 V Collector-Emitter Voltage VEBO
mmbt2222a.pdf
MMBT2222A Transistors SOT-23 Plastic-Encapsulate Transistors(NPN) RHOS Features SOT-23 Epitaxial planar die construction Complementary PNP Type available (MMBT2907A) Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Symbol Parameter Value Units VCBO Collector-Base Voltage 70 V 1. BASE VCEO Collector-Emitter Voltage 40 V 2. EMITT
mmbt2222 mmbt2222a.pdf
SMD NPN Transistor Formosa MS MMBT2222 / MMBT2222A General Purpose Transistor NPN Silicon Package outline Features High collector-emitterbreakdien voltage. SOT-23 (BV = 40V@I =10mA) CEO C Small load switch transistor with high gain and low stauration voltage, is designed for general purpose amflifier and switching applications at collector current. Capable of 225mW pow
mmbt2222a.pdf
MMBT2222A SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) SOT- 23 Features Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) Marking 1P Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V V Collector-Emitter Voltage 40 V CEO V Emitter-Base Voltage 6 V EBO C I Collector Current 600 mA C P Collector Power D
tmpt2221a tmpt2222 tmpt2222a tmpt2484 tmpt3903 tmpt3904 tmpt4124 tmpt4401 tmpt5088 tmpt5089 tmpt5550.pdf
mps2222a.pdf
MPS2222A General Purpose Transistor B C NPN Silicon FEATURE DIM MILLIMETERS Complementary PNP Type available (MPS2907A) A 4.70 MAX E B 4.80 MAX G C 3.70 MAX D D 0.55 MAX E 1.00 MAXIMUM RATINGS (TA=25 unless otherwise noted) F 1.27 G 0.85 H 0.45 _ Symbol Parameter Value Units H J 14.00 0.50 + L 2.30 F F M 0.51 MAX VCBO Collector-Base Voltage 75 V VCEO Collector-E
mmbt2222a.pdf
MMBT2222A NPN General Purpose Amplifier FEATURES Epitaxial planar die construction. Complementary PNP type available MMBT2907A. Ultra-small surface mount package. MSL 1 APPLICATIONS Use as a medium power amplifier. Switching requiring collector currents up to 500mA. SOT-23 MAXIMUM RA TING @ Ta=25 unless otherwise specified Symbol Parameter Valu
mmbt2222a.pdf
Jiangsu Yutai Electronics Co.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT2222A TRANSISTOR (NPN) 1. BASE FEATURES 2.EMITTER Epitaxial planar die construction 3.COLLECTOR Complementary PNP Type available(MMBT2907A) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO 40 V Collector-Emitter Vo
mmbt2222a-ms.pdf
www.msksemi.com MMBT2222A-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) FEATURES Epitaxial planar die construction Complementary PNP Type available(MMBT2907A- MS) 1. BASE MARKING 1P 2. EMITTER SOT 23 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO 40 V Collector-Em
mmbt2222a.pdf
DATA SHEET MMBT2222A GENERAL PURPOSE TRANSISTOR NPN CURRENT 600 mA POWER 300 mW FEATURES HIGH DC CURRENT GAIN EPITAXIAL PLANAR DIE CONSTRUCTION COMPLEMENTARY PNP YTPE AVAILABLE MMBT2907/A LEAD FREE AND HALOGEN-FREE MECHANICAL DATA CASE SOT-23 TERMINAL SOLDERABLE PER MIL-STD-220G, METHOD 208 APPROX. WEIGHT 0.008 GRAMS CASE SOT-23 MAXIMUM RATINGS
mmbt2222 mmbt2222a.pdf
MMBT2222/MMBT2222A NPN Silicon Epitaxial Planar Transistor SOT-23 Features For switching and amplifier applications 3 1 2 1.B 2.E 3.C Absolute Maximum Ratings (Ta=25 ) Parameter Symbol Value Unit Collector Base Voltage MMBT2222 60 VCBO V MMBT2222A 75 Collector Emitter Voltage MMBT2222 30 VCEO V MMBT2222A 40 Emitter Base Voltage MMBT2222 5 VEBO V MMBT2222A 6 Collector
mmbt2222a-l mmbt2222a-h.pdf
Jingdao Microelectronics co.LTD MMBT2222A MMBT2222A SOT-23 NPN TRANSISTOR 3 FEATURES Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Symbol Parameter Value Unit 1.BASE Collector Base Voltage VCBO 75 V 2.EMITTER Collector Emitte
pxt2222a.pdf
PXT2222A SOT-89-3 L Plastic-Encapsulate Transistors TRANSISTOR (NPN) SOT-89-3 L FEATURES 1. BASE Epitaxial planar die construction Complementary PNP Type available(PXT2907A) 2. COLLECTOR MARKING 1P 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO E
mmbt2222a.pdf
MMBT2222A SOT-23 NPN Transistors 3 2 1.Base 2.Emitter 1 3.Collector ) Simplified outline(SOT-23) Mrarking Marking 1P Absolute Maximum Ratin gs Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 70 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 600 mA Power Dissipation PD
mmbt2222a.pdf
MMBT2222A AO3400 SI2305 MMBT2222A TRANSISTOR (NPN) FEATURES SOT-23 Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1 BASE 2 EMITTER 3 COLLECTOR MARKING 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage 75 V VCBO VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage
mmst2222a.pdf
RoHS RoHS COMPLIANT COMPLIANT MMST2222A NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moitsure Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package SOT-323 Molding compound meets UL 94 V-0 flammabi
mmbt2222a.pdf
RoHS RoHS COMPLIANT COMPLIANT MMBT2222A NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisure Sensitivity Level 1 High Conductance Surface mount package ideally Suited for Automatic Insertion Mechanical Data Package SOT-23 Molding compound meets UL 94 V-0 flamm
mmbt2222aq.pdf
RoHS RoHS COMPLIANT COMPLIANT MMBT2222AQ NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 High Conductance Part no. with suffix Q means AEC-Q101 qualified Applications Switching and linear amplification Mechanical Data Case SOT-23 Terminals Tin plated lead
mmbt2222e mmbt2222ae.pdf
TH09/2479 TH97/2478 IATF 0113686 SGS TH07/1033 www.eicsemi.com MMBT2222E / MMBT2222AE NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage MMBT2222E 60 VCBO V MMBT2222AE 75 Collector Emitter Voltage MMBT2222E 30 VCEO V MMBT2222AE 40 Emitter Base Voltage
mmbt2222a.pdf
MMBT2222A MMBT2222A SOT-23 Plastic-Encapsulate Transistors(NPN) General description SOT-23 Plastic-Encapsulate Transistors(NPN) FEATURES Complementary to MMBT2907A Power Dissipation of 300mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 DEVICE MARKING CODE Device Type Device Marking MMBT2222A 1P . Maximu
mmbt2222a.pdf
MMBT2222A TRANSISTOR (NPN) FEATURES SOT-23 Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1 BASE 2 EMITTER 3 COLLECTOR MARKING 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage 75 V VCBO VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Curren
fhs2222a-me.pdf
FHS2222A-ME NPN Transistor DESCRIPTIONS SOT-23 NPN NPN transistor in a SOT-23 Plastic Package. APPLICATIONS General purpose application,switching. PIN ASSIGNMENT 1 BASE 2 EMITTER 3 COLLECTOR Equivalent Circuit Name rule Name Addition
mmbt2222a.pdf
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD MMBT2222A FEATURES NPN Switching Transistor MAXIMUM RATINGS Characteristic Symbol Unit MMBT2222 MMBT2222A Collector-Emitter Voltage V 30 40 Vdc CEO - Collector-Base Voltage V 60 75 Vdc CBO -
mmbt2222a.pdf
MMBT2222A NPN GENERAL PURPOSE SWITCHING TRANSISTOR 75Volts POWER 300mWatts VOLTAGE FEATURES NPN epitaxial silicon, planar design. Collector-emitter voltage VCE=40V. Collector current IC=0.6A. ansition frequency fT>250MHz @ Tr IC=20mAdc, VCE=20Vdc, f=100MHz. In compliance with ER RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminals S
mmbt2222a.pdf
MMBT2222A BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to MMBT2907A Epitaxial planar die construction Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Value Unit C
pxt2222a-p1p.pdf
PXT2222A-P1P NPN Plastic-Encap sulate Transistors SOT-89-3L Fea tures Epitaxial planar die construction Complementary PNP Type available(PXT2907A) 1.70 0.1 0.42 0.1 0.46 0.1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V Dimensions in millimeters VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Vo
pxt2222a.pdf
PXT2222A NPN Plastic-Encap sulate Transistors SOT-89-3L Fea tures Epitaxial planar die construction Complementary PNP Type available(PXT2907A) 1.70 0.1 0.42 0.1 0.46 0.1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V Dimensions in millimeters VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage
mmbt2222a.pdf
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A SOT-23 C Dim Min Max A 0.37 0.51 B C 1.20 1.40 B TOP VIEW B E C D 2.30 2.50 E G D 0.89 1.03 E 0.45 0.60 H G 1.78 2.05 K H 2.80 3.00 J J 0.013 0.10 K 0.903
Другие транзисторы: MMBT3904L3, MMBT3906HE3, MMBT3906L3, MMS8050, MMS8550, MMS9014, MMS9015, RF3356, 2SD313, 5401, 5551, MOT13003C, MOT13003D, 2SA1015-MS, 2SB772-MS, 2SC1623-MS, 2SC1815-MS
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