2222A - описание и поиск аналогов

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by P2N2222A/D Amplifier Transistors NPN Silicon P2N2222A COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Collector Emitter Voltage VCEO 40 Vdc 3 Collector Base Voltage VCBO 75 Vdc CASE 29 04, STYLE 17 Emitter Base Voltage VEBO 6.0 Vdc TO 92 (TO 226AA) Collector Current Conti

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT2222AWT1/D Preliminary Information MMBT2222AWT1 General Purpose Transistor Motorola Preferred Device NPN Silicon These transistors are designed for general purpose amplifier applica- tions. They are housed in the SOT 323/SC 70 package which is designed for low power surface mount applications. COLLECTOR 3 3 1 1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by PZT2222AT1/D NPN Silicon Planar PZT2222AT1 Epitaxial Transistor Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. SOT-223 PACKAGE PNP Complem

PMBT2222; PMBT2222A NPN switching transistors Rev. 6 12 November 2010 Product data sheet 1. Product profile 1.1 General description NPN switching transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP complement NXP JEDEC PMBT2222 SOT23 TO-236AB PMBT2907 PMBT2222A PMBT2907A 1.2 Features and benefi

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PZT2222A NPN switching transistor 1999 Apr 14 Product specification Supersedes data of 1997 Jun 02 Philips Semiconductors Product specification NPN switching transistor PZT2222A FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 base 2, 4 collector APPLICATIONS 3 emitter

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 PMST2222; PMST2222A NPN switching transistors 1999 Apr 22 Product specification Supersedes data of 1997 Jul 14 Philips Semiconductors Product specification NPN switching transistors PMST2222; PMST2222A FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 base 2 emitter APPLICATIO

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBT2222; PMBT2222A NPN switching transistors 1999 Apr 27 Product specification Supersedes data of 1997 Sep 09 Philips Semiconductors Product specification NPN switching transistors PMBT2222; PMBT2222A FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 base 2 emitter APPLICATIO

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PXT2222A NPN switching transistor 1999 Apr 14 Product specification Supersedes data of 1997 May 05 Philips Semiconductors Product specification NPN switching transistor PXT2222A FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 emitter 2 collector APPLICATIONS 3 base Gen

DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2222; 2N2222A NPN switching transistors 1997 May 29 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN switching transistors 2N2222; 2N2222A FEATURES PINNING High current (max. 800 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 emitte

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PXT2222A NPN switching transistor Product data sheet 2004 Nov 22 Supersedes data of 1999 Apr 14 NXP Semiconductors Product data sheet NPN switching transistor PXT2222A FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 emitter 2 collector APPLICATIONS 3 base General pu

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PH2222A NPN switching transistor 1999 Apr 27 Product specification Supersedes data of 1997 Sep 04 Philips Semiconductors Product specification NPN switching transistor PH2222A FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 emitter 2 base APPLICATIONS 3 collector Switc

DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBT2222A NPN switching transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN switching transistor MMBT2222A FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 base 2 emitter APPLICATIONS 3 collector Switching and linear amplification.

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PN2222A NPN switching transistor 1999 May 21 Product specification Supersedes data of 1997 May 05 Philips Semiconductors Product specification NPN switching transistor PN2222A FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 collector 2 base APPLICATIONS 3 emitter Gener

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PZT2222A NPN switching transistor Product data sheet 1999 Apr 14 Supersedes data of 1997 Jun 02 NXP Semiconductors Product data sheet NPN switching transistor PZT2222A FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 base 2, 4 collector APPLICATIONS 3 emitter Swi

2N2222AHR Hi-Rel 40 V, 0.8 A NPN transistor Datasheet - production data Features Parameter ESCC JANS 1 2 BVCEO min 40 V 50 V 3 IC (max) 0.8 A TO-18 3 3 hFE at 10 V - 150 mA 100 4 1 1 2 2 Hermetic packages LCC-3 UB ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid. Up to 100 krad(Si) low dose ratee Description Figure 1. Internal schematic

PN2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment PN2222A PN2222A TO-92 / Bulk PN2222A-AP PN2222A TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPN TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY THE PNP COMPLEMENTARY TYPE IS PN2907A TO-92 TO-92 APPLICATIONS Bulk Ammopack WELL SUITABLE FOR TV AND HOME APPLIANCE EQU

STF2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking STF2222A 20F SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-89 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE IS STF2907A APPLICATIONS SOT-89 WELL SUITABLE FOR PORTABLE EQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTAG

SO2222 SO2222A SMALL SIGNAL NPN TRANSISTORS Type Marking SO2222 N13 SO2222A N20 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR 2 APPLICATION IN SURFACE MOUNTING 3 CIRCUITS 1 MEDIUM CURRENT AF AMPLIFICATION AND SWITCHING PNP COMPLEMENTS ARE RESPECTIVELY SOT-23 SO2907 AND SO2907A INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter V

2N2219A 2N2222A HIGH SPEED SWITCHES PRELIMINARY DATA DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage

SO2222AW SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking SO2222AW 20W SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-323 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE IS SO2907AW APPLICATIONS SOT-323 WELL SUITABLE FOR PORTABLE EQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLT

MMBT2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking MMBT2222A M22 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE IS MMBT2907A APPLICATIONS SOT-23 WELL SUITABLE FOR PORTABLE EQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOL

STZT2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking STZT2222A N22A SILICON EPITAXIAL PLANAR NPN TRANSISTOR SOT-223 PLASTIC PACKAGE FOR 2 SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING 3 THE PNP COMPLEMENTARY TYPE IS 2 1 STZT2907A APPLICATIONS SOT-223 WELL SUITABLE FOR SMD MOTHER BOARD ASSEMBLY SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SAT

SO2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking SO2222A N20 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE IS SO2907A APPLICATIONS SOT-23 WELL SUITABLE FOR PORTABLE EQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTAGE

May 2006 KST2222A tm NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1P 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipa

July 2006 KSP2222A tm NPN General Purpose Amplifier Features Collector-Emitter Voltage VCEO= 40V Collector Power Dissipation PC (max)=625mW Available as PN2222A TO-92 1 2 3 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEB

September 2008 MMBT2222AT NPN Epitaxial Silicon Transistor Features C General purpose amplifier transistor. E Ultra-Small Surface Mount Package for all types. B General purpose switching & amplification application Marking A02 SOT-523F Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO Colle

MMBT2222AK NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1PK 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 350 mW

August 2010 PN2222A / MMBT2222A / PZT2222A NPN General Purpose Amplifier Features This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from process 19. PN2222A MMBT2222A PZT2222A C C E E C B TO-92 SOT-23 SOT-223 B Mark 1P EBC Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Value U

PN2222A MMBT2222A PZT2222A C C E E C B TO-92 SOT-23 SOT-223 B Mark 1P EBC NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from process 19. Absolute Maximum Ratings * Ta=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collecto

FMB2222A FFB2222A MMPQ2222A B4 E2 C2 E4 B2 B3 E1 E3 C1 B2 C1 E2 B1 E1 C4 C4 C2 B2 C3 SC70-6 B1 E2 C3 Mark .1P pin #1 E1 C2 pin #1 B1 C2 SOIC-16 C1 NOTE The pinouts are symmetrical; pin 1 and pin C1 Mark SuperSOT -6 pin #1 4 are interchangeable. Units inside the carrier can MMPQ2222A Mark .1P be of either orientation and will not affect the functionality

PN2222A MMBT2222A PZT2222A C C E E C C TO-92 B B B SOT-23 E SOT-223 Mark 1P NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-

May 2010 FJX2222A NPN Epitaxial Silicon Transistor Features General Purpose Transistor Collector-Emitter Voltage VCEO = 40V Collector Dissipation PC (max) = 325mW 3 Marking S1P 2 1 SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter V

PMBT2222; PMBT2222A NPN switching transistors Rev. 6 12 November 2010 Product data sheet 1. Product profile 1.1 General description NPN switching transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP complement NXP JEDEC PMBT2222 SOT23 TO-236AB PMBT2907 PMBT2222A PMBT2907A 1.2 Features and benefi

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PMBT2222AQA 40 V, 600 mA NPN switching transistor 21 September 2018 Product data sheet 1. General description NPN switching transistor in an ultra small DFN1010D-3 (SOT1215) leadless Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement PMBT2907AQA 2. Features and benefits High current (max. 600 mA) Low voltage (max. 40V) Leadl

PXT2222A NPN switching transistors 2 April 2014 Product data sheet 1. General description NPN switching transistor in a medium power flat lead SOT89 (SC-62/TO-243) Surface- Mounted Device (SMD) plastic package. PNP complement PXT2907A 2. Features and benefits High current max. 600 mA Low voltage max. 40 V 3. Applications Switching and linear amplification 4. Quick ref

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PMBT2222AM 40 V, 600 mA NPN switching transistor 21 September 2018 Product data sheet 1. General description NPN switching transistor in an ultra small DFN1006-3 (SOT883) leadless Surface-Mounted Device (SMD) plastic package. PNP complement PMBT2907AM 2. Features and benefits High current (max. 600 mA) Low voltage (max. 40V) Leadless ultra small SMD plastic package L

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

KSP2222A NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 Collector-Emitter Voltage VCEO= 40V Collector Dissipation PC(max)=625mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 70 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current IC 600 mA Collector Dissipation PC 625 m

NPN Silicon Switching Transistor SXT 2222 A High current gain 0.1 mA to 500 mA Low collector-emitter saturation voltage Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 SXT 2222 A 2P Q68000-A8330 B C E SOT-89 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 40 V Collector-base voltage VCB0 75 Emitter-base voltage VEB0 6 Collec

UMT2222A Datasheet NPN Medium Power Transistor (Switching) lOutline l SOT-323 Parameter Value SC-70 VCEO 40V IC 600mA UMT3 lFeatures lInner circuit l l 1)BVCEO 40V(IC=10mA) 2)Complements the UMT2907A lApplication l AUDIO FREQUENCY SMALL SIGNAL AMPLIFIER

SST2222A HZG Datasheet NPN Medium Power Transistor (Switching) AEC-Q101 Qualified lOutline l SOT-23 Parameter Value VCEO 40V IC 600mA SST3 lFeatures lInner circuit l l 1)BVCEO 40V(IC=10mA) 2)Complements the SST2907A HZG lApplication l AUDIO FREQUENCY SMALL SIGNAL AMPLIFIER

UMT2222A / SST2222A / MMST2222A Transistors NPN Medium Power Transistor (Switching) UMT2222A / SST2222A / MMST2222A Features Dimensions (Unit mm) 1) BVCEO > 40V (IC=10mA) UMT2222A 2) Complements the UMT2907A / SST2907A / MMST2907A. (1) Emitter (2) Base ROHM UMT3 EIAJ SC-70 (3) Collector SOT-323 Package, marking, and packaging specifications SST2222A Part No. U

CMPT2222AE www.centralsemi.com ENHANCED SPECIFICATION SURFACE MOUNT DESCRIPTION NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT2222AE is an Enhanced version of the CMPT2222A NPN Switching transistor in a SOT-23 surface mount package, designed for switching applications, interface circuit and driver circuit applications. MARKING CODE C1PE FEATURED ENHANCED SPECIFICATIONS

CMUT2222A www.centralsemi.com SURFACE MOUNT DESCRIPTION NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMUT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in an ULTRAmini surface mount package, designed for small signal general purpose and switching applications. MARKING CODE PC1 SOT-523 CASE MAXIMUM RATINGS (TA=25 C

CMPT2222A www.centralsemi.com SURFACE MOUNT DESCRIPTION NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal, general purpose and switching applications. MARKING CODE C1P SOT-23 CASE MAXIMUM RATINGS (TA=25 C) SYMBOL UNITS C

CMLT2222AG www.centralsemi.com SURFACE MOUNT SILICON DESCRIPTION DUAL NPN TRANSISTOR The CENTRAL SEMICONDUCTOR CMLT2222AG consists of two (2) isolated 2222A NPN silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface mount package. These devices have been designed for small signal general purpose and switching applications. MAR

CMKT2222A SURFACE MOUNT www.centralsemi.com DUAL NPN SMALL SIGNAL DESCRIPTION SILICON SWITCHING The CENTRAL SEMICONDUCTOR CMKT2222A TRANSISTORS consists of two individually isolated 2222A NPN silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-363 surface mount package. This ULTRAmini device has been designed for small signal general

DATA SHEET 2N2221A 2N2222A NPN SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N2221A, 2N2222A types are Silicon NPN Planar Epitaxial Transistors designed for small signal general purpose and switching applications. MAXIMUM RATINGS (TA=25 C) SYMBOL UNITS Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage

CMXT2222A www.centralsemi.com SURFACE MOUNT DUAL NPN DESCRIPTION SILICON TRANSISTORS The CENTRAL SEMICONDUCTOR CMXT2222A type is a dual NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a SUPERmini surface mount package, and designed for small signal general purpose and switching applications. MARKING CODE X1P SOT-26 CASE MAXIMUM RATIN

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MMST2222A 40V NPN SMALL SIGNAL TRANSISTOR IN SOT323 Features Mechanical Data BVCEO > 40V Case SOT323 IC = 600mA Collector Current Case Material Molded Plastic. Green Molding Compound; Epitaxial Planar Die Construction UL Flammability Rating 94V-0 Ultra-Small Surface Mount Package Moisture Sensitivity Level 1 per J-STD-020 Complementary PNP

MMBT2222AT 40V NPN SMALL SIGNAL TRANSISTOR IN SOT523 Features Mechanical Data BVCEO > 40V Case SOT523 Case Material Molded Plastic. Green Molding Compound. IC = 600mA Collector Current UL Flammability Rating 94V-0 Epitaxial Planar Die Construction Moisture Sensitivity Level 1 per J-STD-020 Ultra-Small Surface Mount Package Terminals

MMBT2222ALP4 40V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Low Collector-Emitter Saturation Voltage, VCE(sat) Case X2-DFN1006-3 Case Material Molded Plastic, "Green" Molding Compound. Ultra-Small Leadless Surface Mount Package UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Moistu

DZT2222A NPN SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Type Available (DZT2907A) 3 2 Ideally Suited for Automated Assembly Processes 1 Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) 4 SOT-223 Mechanical Data COLLECTOR

MMBT2222A 40V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case SOT23 Complementary PNP Type MMBT2907A Case Material Molded Plastic, Green Molding Compound; Ideal for Low Power Amplification and Switching UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 &

MMDT2222A DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-363 C2 B1 E1 Complementary PNP Type Available (MMDT2907A) Dim Min Max Lead Free/RoHS Compliant (Note 2) A 0.10 0.30 B C "Green" Device (Note 3 and 4) B 1.15 1.35 E2 B2 C1 Mechanical Data C 2.00 2.20 D 0.65 Nominal Case SOT-363 H Ca

DXT2222A 40V NPN SURFACE MOUNT TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > 40V Case SOT89 IC = 600mA High Collector Current Case Material Molded Plastic, Green Molding Compound; Complementary PNP Type DXT2907A UL Flammability Rating 94V-0 Ideal for Medium Power Switching or Amplification Applications Moisture Sensitivity Level 1 per J-S

SMBT2222A/MMBT2222A NPN Silicon Switching Transistor Low collector-emitter saturation voltage 2 3 Complementary type 1 SMBT2907A / MMBT2907A (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package SMBT2222A/MMBT2222A s1P SOT23 1 = B 2 = E 3 = C Maximum Ratings Parameter Symbol Value Unit 40 V Collector-emitter

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMDT2222A Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features NPN Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate Epitaxial Die Construction Transistors Small Surface Mount Package Marking

MCC Micro Commercial Components TM MMST2222A 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN Epoxy meets UL 94 V-0 flammability rating Plastic-Encapsulate Moisure Sensitivity Level 1 Power

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMBT2222AT Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General Capable of 150mWatts of Power Diss

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth PN2222A Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) 625mW Marking Type number Continuous Collector Current (Ic) =600mA. NPN General Operating and storange

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMBT2222AT Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General Capable of 150mWatts of Power Dissipation Purpose Amplifier Operating and Storage Junction T

MCC 2N2222 Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2N2222A Phone (818) 701-4933 Fax (818) 701-4939 Features High current (max.800mA) Low voltage (max.40V) NPN Switching Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates Transistors RoHS Compliant. See ordering information) Maximum Ratings

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMBT2222A Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation, IC=600mA NPN General Operating and Storage Junction Temperature -55 C to +150 C Thermal resistance,Junction to Ambient 500oC/

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

PN2222, PN2222A General Purpose Transistors NPN Silicon http //onsemi.com Features Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO Vdc 1 PN2222 30 EMITTER PN2222A 40 Collector-Base Voltage VCBO Vdc PN2222 60 PN2222A 75 Emitter-Base Voltage VEBO Vdc PN2222 5.0 TO-92 PN2222A 6.0 CASE 29 STYLE

MPS2222, MPS2222A MPS2222A is a Preferred Device General Purpose Transistors NPN Silicon http //onsemi.com Features Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO Vdc MPS2222 30 1 MPS2222A 40 EMITTER Collector-Base Voltage VCBO Vdc MPS2222 60 MPS2222A 75 Emitter-Base Voltage VEBO Vdc MPS2222 5.

MMBT2222L, MMBT2222AL, SMMBT2222AL General Purpose Transistors NPN Silicon www.onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and 1 PPAP Capable BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Valu

PN2222, PN2222A General Purpose Transistors NPN Silicon http //onsemi.com Features Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO Vdc 1 PN2222 30 EMITTER PN2222A 40 Collector-Base Voltage VCBO Vdc PN2222 60 PN2222A 75 Emitter-Base Voltage VEBO Vdc PN2222 5.0 TO-92 PN2222A 6.0 CASE 29 STYLE

P2N2222A Amplifier Transistors NPN Silicon Features These are Pb--Free Devices* http //onsemi.com COLLECTOR 1 MAXIMUM RATINGS (TA =25 C unless otherwise noted) Characteristic Symbol Value Unit 2 BASE Collector--Emitter Voltage VCEO 40 Vdc Collector--Base Voltage VCBO 75 Vdc 3 Emitter--Base Voltage VEBO 6.0 Vdc EMITTER Collector Current -- Continuous IC 600 mAdc Total Devi

MMBT2222AM3T5G NPN General Purpose Transistor The MMBT2222AM3T5G device is a spin-off of our popular SOT-23 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-723 surface mount http //onsemi.com package. This device is ideal for low-power surface mount applications where board space is at a premium. Features COLLECTOR 3 Reduce

PN2222, PN2222A General Purpose Transistors NPN Silicon http //onsemi.com Features Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO Vdc 1 PN2222 30 EMITTER PN2222A 40 Collector-Base Voltage VCBO Vdc PN2222 60 PN2222A 75 Emitter-Base Voltage VEBO Vdc PN2222 5.0 TO-92 PN2222A 6.0 CASE 29 STYLE

May 2006 KST2222A tm NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1P 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipa

MMBT2222L, MMBT2222AL, SMMBT2222AL General Purpose Transistors NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique 1 Site and Control Change Requirements BASE 2 MAXIMUM RATINGS EMITTER Rating Symbo

MMPQ2222A Preferred Device Quad General Purpose Transistor NPN Silicon http //onsemi.com 1 MAXIMUM RATINGS 16 2 15 Rating Symbol Value Unit 3 14 4 13 Collector-Emitter Voltage VCEO 40 Vdc 5 12 6 11 Collector-Base Voltage VCB 75 Vdc 7 10 Emitter-Base Voltage VEB 5.0 Vdc 8 9 Collector Current - Continuous IC 500 mAdc Four Transistors Equal Power Total Power Dissipation PD W

MMBT2222ATT1 General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. http //onsemi.com Features COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 MAXIMUM RATINGS (TA = 25

MPS2222, MPS2222A MPS2222A is a Preferred Device General Purpose Transistors NPN Silicon http //onsemi.com Features Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO Vdc MPS2222 30 1 MPS2222A 40 EMITTER Collector-Base Voltage VCBO Vdc MPS2222 60 MPS2222A 75 Emitter-Base Voltage VEBO Vdc MPS2222 5.

PZT2222AT1 NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT--223 package which is designed for medium power surface mount http //onsemi.com applications. Features SOT--223 PACKAGE PNP Complement is PZT2907AT1 NPN SILICON TRANSISTOR The SOT--223 Package Can be

MMBT2222ATT1G, NSVMMBT2222ATT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. COLLECTOR 3 Features NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Chang

MBT2222ADW1T1G General Purpose Transistor NPN Silicon Features Moisture Sensitivity Level 1 http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant (3) (2) (1) MAXIMUM RATINGS Rating Symbol Value Unit Q1 Q2 Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 75 Vdc (4) (5) (6) Emitter-Base Voltage VEBO 6.0 Vdc Collector Cur

MMBT2222ATT1G, NSVMMBT2222ATT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. COLLECTOR 3 Features NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Chang

MMBT2222ATT1G, NSVMMBT2222ATT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. COLLECTOR 3 Features NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Chang

MMBT2222L, MMBT2222AL, SMMBT2222AL General Purpose Transistors NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique 1 Site and Control Change Requirements BASE 2 MAXIMUM RATINGS EMITTER Rating Symbo

MMBT2222AM3T5G NPN General Purpose Transistor The MMBT2222AM3T5G device is a spin-off of our popular SOT-23 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-723 surface mount www.onsemi.com package. This device is ideal for low-power surface mount applications where board space is at a premium. COLLECTOR Features 3 Reduces B

MMBT2222AWT1G, SMMBT2222AWT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. Features AEC-Q101 Qualified and PPAP Capable SC-70 S Prefix for Automotive and Other Applications Requiring Uni

MBT2222ADW1T1G General Purpose Transistor NPN Silicon Features Moisture Sensitivity Level 1 http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant (3) (2) (1) MAXIMUM RATINGS Rating Symbol Value Unit Q1 Q2 Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 75 Vdc (4) (5) (6) Emitter-Base Voltage VEBO 6.0 Vdc Collector Cur

MMBT2222ATT1G, NSVMMBT2222ATT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. COLLECTOR 3 Features NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Chang

MPS2222, MPS2222A MPS2222A is a Preferred Device General Purpose Transistors NPN Silicon http //onsemi.com Features Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO Vdc MPS2222 30 1 MPS2222A 40 EMITTER Collector-Base Voltage VCBO Vdc MPS2222 60 MPS2222A 75 Emitter-Base Voltage VEBO Vdc MPS2222 5.

MPS2222, MPS2222A MPS2222A is a Preferred Device General Purpose Transistors NPN Silicon http //onsemi.com Features Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO Vdc MPS2222 30 1 MPS2222A 40 EMITTER Collector-Base Voltage VCBO Vdc MPS2222 60 MPS2222A 75 Emitter-Base Voltage VEBO Vdc MPS2222 5.

P2N2222A Amplifier Transistors NPN Silicon Features These are Pb--Free Devices* http //onsemi.com COLLECTOR 1 MAXIMUM RATINGS (TA =25 C unless otherwise noted) Characteristic Symbol Value Unit 2 BASE Collector--Emitter Voltage VCEO 40 Vdc Collector--Base Voltage VCBO 75 Vdc 3 Emitter--Base Voltage VEBO 6.0 Vdc EMITTER Collector Current -- Continuous IC 600 mAdc Total Devi

MBT2222ADW1, NSVBT2222ADW1 General Purpose Transistor NPN Silicon http //onsemi.com Features Moisture Sensitivity Level 1 NSV Prefix for Automotive and Other Applications Requiring (3) (2) (1) Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable Q1 Q2 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant (4) (5) (6) MAXIM

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MMBT2222AWT1G, SMMBT2222AWT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. Features AEC-Q101 Qualified and PPAP Capable SC-70 S Prefix for Automotive and Other Applications Requiring Uni

MMBT2222AWT1G, SMMBT2222AWT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. Features AEC-Q101 Qualified and PPAP Capable SC-70 S Prefix for Automotive and Other Applications Requiring Uni

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

MBT2222ADW1, NSVBT2222ADW1 General Purpose Transistor NPN Silicon http //onsemi.com Features Moisture Sensitivity Level 1 NSV Prefix for Automotive and Other Applications Requiring (3) (2) (1) Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable Q1 Q2 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant (4) (5) (6) MAXIM

PZT2222A NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount www.onsemi.com applications. Features SOT-223 PACKAGE PNP Complement is PZT2907AT1 NPN SILICON TRANSISTOR The SOT-223 Package Can be Soldered

PN2222, PN2222A General Purpose Transistors NPN Silicon http //onsemi.com Features Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO Vdc 1 PN2222 30 EMITTER PN2222A 40 Collector-Base Voltage VCBO Vdc PN2222 60 PN2222A 75 Emitter-Base Voltage VEBO Vdc PN2222 5.0 TO-92 PN2222A 6.0 CASE 29 STYLE

MMBT2222AWT1 General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. http //onsemi.com Features COLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3 Compliant 1 MAXIMUM RATINGS BASE Rating Symbo

UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 PN2222AL-AB3-R PN2222AG-AB3-R SOT-89 B C E Tape Reel PN2222AL-

UNISONIC TECHNOLOGIES CO., LTD MMBT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE 3 3 AMPLIFIER 1 1 2 2 FEATURES SOT-23 SOT-323 (JEDEC TO-236) * This device is for use as a medium power amplifier and switch requiring collector currents up to 600mA. 3 1 1 2 SOT-523 DFN1006-3 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing 1 2 3 MMBT

UNISONIC TECHNOLOGIES CO., LTD PZT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. 1 SOT-223 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 PZT2222AL-AA3-R PZT2222AG-AA3-R SOT-223 B C E Tape Ree

PN2222A NPN Silicon Transistor Descriptions PIN Connection General purpose application C Switching application Features B Low Leakage current Low collector saturation voltage enabling E low voltage operation Complementary pair with PN2907A TO-92 Ordering Information Type NO. Marking Package Code PN2222A PN2222A TO-92 Absolute maximum rat

STN2222A NPN Silicon Transistor Descriptions PIN Connection General purpose application C Switching application B Features Large collector current Low collector saturation voltage E Complementary pair with STN2907A TO-92 Ordering Information Type NO. Marking Package Code STN2222A STN2222A TO-92 Year & Week Code Absolute maximum

STN2222AS NPN Silicon Transistor Descriptions General purpose application COLLECTOR Switching application 3 3 1 Features BASE Large collector current Low collector saturation voltage 2 EMITTER Complementary pair with STN2907AS SOT-23 Ordering Information Part Number Marking Package XA STN2222AS SOT-23 * Device

STN2222ASF NPN Silicon Transistor Descriptions PIN Connection General purpose application 3 Switching application 1 Features 2 Large collector current SOT-23F Low collector saturation voltage Complementary pair with STN2907ASF Ordering Information Type NO. Marking Package Code XA STN2222ASF SOT-23F Device Code Year&

SBT2222A NPN Silicon Transistor Descriptions General purpose application Switching application COLLECTOR 3 3 Features 1 Low Leakage current BASE Low collector saturation voltage enabling low voltage operation 2 Complementary pair with SBT2907A EMITTER SOT-23 Ordering Information Part Number Marking * Package 1P SBT2222A SOT-2

Product Bulletin JANTX, JANTXV, 2N2222AUB September 1996 Surface Mount NPN General Purpose Transistor Type JANTX, JANTXV, 2N2222AUB Feature Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 V Ceramic surface mount package Collector-Emitter Voltage. . . . . . .

CMBT2222A NPN Silicon Planar Epitaxial Transistors Pin configuration 1. BASE 2. EMITTER 3. COLLECTOR 3 1 2 Unit inch (mm) Absolute Maximum Ratings Symbol Value UNIT Collector-base voltage (open emitter) VCBO max 75 V Collector-emmitter voltage (open base) VCEO max 40 V Emmitter base voltage (open collector) VEBO max 6.0 V IC Collector current (d.c.) max 600 mA Total

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2222AC1 High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage 75V VCEO Collector Emitter Voltage 50V VE

SILICON SWITCHING NPN TRANSISTOR 2N2222AC3A, 2N2222AC3B 2N2222AC3C High Speed Saturated Switching Hermetic LCC3 Ceramic package. Variant B to MIL-PRF-19500/255 outline Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage 75V VCEO Collector Emitter Voltage 50V VEBO Emitter Bas

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2222AC1 High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage 75V VCEO Collector Emitter Voltage 50V VE

MMBT2222AT NPN Silicon General Purpose Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-523 Epitaxial Planar Die Construction Complementary PNP Type Available(MMBT2907FW) Ideal for Medium Power Amplification and Switching MARKING CODE 1P PACKAGE INFORMATION Package MPQ Leader Size Millim

MPS2222A NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 COLLECTOR 3 2 BASE FEATURES 1 . Epitaxial Planar Die Construction 1 EMITTER 2 3 . Complementary PNP Type Available (MPS2907A) . Ideal for Medium Power Amplification and Switching MAXIMUM RATINGS RATING SYMBOL VALUE

MMBT2222A NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES A COLLECTOR L Epitaxial Planar Die Construction 3 3 3 Complementary PNP Type Available S Top View B (MMBT2907A) 1 1 1 2 Ideal for Medium Power Amplification and BASE 2 Switching V G 2 EMITTER C H J D K MAXIMUM

MMDT2222A NPN Silicon Elektronische Bauelemente Multi-Chip Transistor RoHS Compliant Product SOT-363 o .055(1.40) 8 * Features .047(1.20) 0o .026TYP (0.65TYP) .021REF (0.525)REF Power dissipation .053(1.35) O .096(2.45) .045(1.15) PCM 0.15 W (Tamp.= 25 C) .085(2.15) Collector current .018(0.46) .010(0.26) C 1 B2 E2 ICM 0.6 A .014(0.35) .006(0.15) .006(0.15)

MMBT2222AW NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURE Complementary PNP Type Available(MMBT2907AW) A L Epitaxial Planar Die Construction 3 3 Ideal for Medium Power Amplification and Switching Top View C B 1 1 2 2 K E D MARKING CODE H J F G MM

PZT2222A NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product SOT-223 C 1. BASE 2. COLLECTOR FEATURES 3. EMITTER E C Power dissipation B P CM 1 W Tamb=25 Collector current I CM 0.6 A Collector-base voltage V(BR)CBO 75 V Operating and stora

MMBT2222A Taiwan Semiconductor 300mW, NPN Small Signal Transistor FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement VCBO 75 V High surge current capability VCEO 40 V Compliant to RoHS directive 2011/65/EU and VEBO 6 V in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors C TK2222ATTD03 TRANSISTOR WBFBP-03A (1.6 1.6 0.5) TOP unit mm DESCRIPTION NPN Epitaxial planar Silicon Transistor B E FEATURES 1. BASE C Complementary PNP Type available (TK2907ATTD03) 2. EMITTER 3. COLLECTOR BACK PPLICATION general purpose amplifier, switching

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 MMST2222A TRANSISTOR ( NPN ) FEATURES Epitaxial planar die construction Complementary PNP Type available(MMST2907A) 1. BASE MARKING K3P 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VC

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate Transistors MMBT2222AM TRANSISTOR (NPN) SOT-723 FEATURES 3 3 Epitaxial planar die construction Complementary PNP Type available(MMBT2907AM) 1 1. BASE 2 2.EMITTER MARKING 1P 3.COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted ) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors MMBT2222AT TRANSISTOR (NPN) FEATURES SOT 523 Complementary to MMBT2907AT Small Package MARKING 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE VCBO Collector-Base Voltage 75 V 2. EMITTER VCEO Collector-Emitter Voltage 40 V 3. COLL

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 MPS2222A TRANSISTOR (NPN ) 1. EMITTER FEATURE 2. BASE Complementary NPN Type available (MPS2907A) 3. COLLECTOR Equivalent Circuit MPS 2222A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors PXT2222A TRANSISTOR (NPN) SOT-89-3L FEATURES 1. BASE Epitaxial planar die construction Complementary PNP Type available(PXT2907A) 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO C

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT2222A TRANSISTOR (NPN) 1. BASE FEATURES 2.EMITTER Epitaxial planar die construction 3.COLLECTOR Complementary PNP Type available(MMBT2907A) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO 40

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors PZT2222A TRANSISTOR (NPN) SOT-223 FEATURES Epitaxial planar die construction Complementary PNP Type available (PZT2907A) 1. BASE MARKING 2. COLLECTOR 3. EMITTER Solid dot = Green molding compound device, if none,the normal device. MAXIMUM RATINGS (Ta=25 unless otherwis

SEMICONDUCTOR KTN2222AE TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B Low Leakage Current D DIM MILLIMETERS ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. 2 _ + A 1.60 0.10 Low Saturation Voltage _ + B 0.85 0.10 3 1 _ C 0.70 0.10 + VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. D 0.27+0.10/-0.05 _ Complementary

SEMICONDUCTOR KTN2222S/AS TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS _ + A 2.93 0.20 Low Leakage Current B 1.30+0.20/-0.15 ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 Low Saturation Voltage E 2.40+0.30/-0.20 1 G 1.90 VCE(sat)=0.3V(Max.) ; IC=150mA,

SEMICONDUCTOR KN2222S/AS TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES L B L DIM MILLIMETERS Low Leakage Current _ + 2.93 0.20 A B 1.30+0.20/-0.15 ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. C 1.30 MAX 2 Low Saturation Voltage 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. 1 G 1

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 DEVICES LEVELS JANSM 3K Rads (Si) 2N2221A 2N2222A JANSD 10K Rads (Si) 2N2221AL 2N2222AL JANSP 30K Rads (Si) 2N2221AUA 2N2222AUA

Zowie Technology Corporation General Purpose Transistor NPN Silicon Halogen-free type Lead free product COLLECTOR 3 3 BASE 1 MMBT2222AGH 1 2 2 SOT-23 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 75 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current-Continuous IC 600 mAdc THERMAL CHARACTERISTICS Char

MMST2222A TRANSISTOR(NPN) SOT-323 FEATURES Epitaxial planar die construction 1. BASE Complementary PNP Type available(MMST2907A) 2. EMITTER MARKING K3P 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO 40 V Collector-Emitter Voltage VEBO 6 V Emitter-Base Voltage IC Collector Curren

PXT2222A TRANSISTOR (NPN) SOT-89 FEATURES 1. BASE Epitaxial planar die construction Complementary PNP Type available(PXT2907A) 2. COLLECTOR 1 2 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V Collector Current -Continuo

MMBT2222A TRANSISTOR(NPN) SOT-23 FEATURES Epitaxial planar die construction 1. BASE Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO 40 V Collector-Emitter Voltage VEBO 6 V Emitter-Base Voltage IC Collector Current -C

MMST2222A SOT-323 Transistor (NPN) SOT-323 1. BASE 2. EMITTER 3. COLLECTOR Features Epitaxial planar die construction Complementary PNP Type available(MMST2907A) MARKING K3P Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO 40 V Collector-Emitter Voltage

MPS2222A TO-92 Transistor (NPN) TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Complementary NPN Type available (MPS2907A) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V Dimensions in inches and (millimeters) IC Collector Current -Continuou

MMBT2222A SOT-23 Transistor(NPN) SOT-23 1. BASE 2.EMITTER 3.COLLECTOR Features Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) MARKING 1P Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emit

MMBT2222ALT1 NPN General Purpose Amplifier 1. BASE 2. EMITTER 3. COLLECTOR FEATURES A SOT-23 Dim Min Max Epitaxial planar die construction. A 2.70 3.10 E B 1.10 1.50 Complementary PNP type available K B C 1.0 Typical MMBT2907A. D 0.4 Typical E 0.35 0.48 J D Ultra-small surface mount package. G 1.80 2.00 G H 0.02 0.1 J 0.1 Typical H K 2.20 2.60 APPLICATIO

PXT2222A SOT-89 Transistor(NPN) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 3. EMITTER 4.4 2 1.6 1.8 1.4 1.4 3 Features 2.6 4.25 2.4 3.75 Epitaxial planar die construction 0.8 MIN Complementary PNP Type available(PXT2907A) 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millime

PZT2222A SOT-223 Transistor(NPN) 1. BASE SOT-223 2. COLLECTOR 1 3. EMITTER Features Epitaxial planar die construction Complementary PNP Type available (PZT2907A) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V Dimensions in inches and

3DK2222A(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 4.45 2. BASE 5.21 3. COLLECTOR 4.32 2.92 5.33 Features MIN Epitaxial planar die construction 3.43 MIN MAXIMUM RATINGS (TA=25 unless otherwise noted) 2.41 2.67 Symbol Parameter Value Units 3.18 2.03 4.19 VCBO Collector-Base Voltage 75 V 2.67 1.14 VCEO Collector-Emitter Voltage 40 V 1.40 2.03 2.67

3DK2222A SOT-23 Transistor(NPN) 1. BASE SOT-23 2.EMITTER 3.COLLECTOR Features Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) MARKING 1P1 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO 40 V Collector-Emitter Voltage VEBO 6 V

WTM2222A NPN Epitaxial Planar Transistors SOT-89 P b Lead(Pb)-Free 1 2 1. BASE Features 3 2. COLLECTOR 3. EMITTER * Low Collector Saturation Voltage * High Speed Switching * For Complementary Use With PNP Type WTM2907A ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Limits Unit VCBO V Collector-Base Voltage 75 VCEO V Collector-Emitter Voltage 40 VEBO V Emitter-Base Vo

MMBT2222AT COLLECTOR Plastic-Encapsulate Transistors 3 3 NPN Silicon 1 2 1 BASE P b Lead(Pb)-Free SC-89 2 EMITTER (SOT-523F) MAXIMUM RATINGS Value Rating Symbol Unit 40 Collector-Emitter Voltage V CEO Vdc 75 Collector-Base Voltage VCBO Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current-Continuous IC 600 mAdc THERMAL CHARACTERISTICS Characteristics Symbol Unit Ma

MBT2222ADW Dual General Purpose Transistors 2 1 3 6 5 4 NPN+NPN Silicon 1 2 3 4 5 6 SOT-363(SC-88) NPN+NPN Value VCEO (1) 150 833 T ,Tstg -55 to+150 J MBT2222ADW=XX u 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint WEITRON http //www.weitron.com.tw MBT2222ADW ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise not

MMBT2222AW 3 1 2 SOT-323(SC-70) Value VCEO 150 833 T ,Tstg -55 to+150 J MMBT2222AW=P1 (1) u 1. Pulse Test Pulse Width 300us, Duty Cycle 2.0% WEITRON http //www.weitron.com.tw MMBT2222AW ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS(1) DC Current Gain - (IC=0.1 mAdc, VCE=10 Vdc) 35 - (

PZT2222A NPN Silicon Planar Epitaxial Transistor COLLECTOR 2, 4 SOT-223 4 1. BASE BASE 2.COLLECTOR 1 1 3.EMITTER 2 4.COLLECTOR 3 3 EM ITTER ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO 40 Vdc Collector-Base Voltage VCBO Vdc 75 Emitter-Base Voltage VEBO Vdc 6.0 Collector Current (DC) IC(DC) Adc 0.6 1.5 Total Device D

FM120-M WILLAS THRU MMBT2222AWT1 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistors SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to NPN Silic

FM120-M MMBT2222ADW1T1 WILLAS THRU Dual General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to o

FM120-M WILLAS THRU PXT2222A SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H SOT-89 TRANSISTOR (NPN) Low profile surface mounted

FM120-M WILLAS THRU MMBT2222ATT1 General Purpose T BARRIER RECTIFIERS -20V- 200V ransistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY SOD-123 PACKAGE Pb Free Product Package outline Features Batch process d NPN Siliconeesign, excellent power dissipation offers better reverse l akage current and thermal resistance. SOD-123H Low profile surface mounted application in order

Spec. No. HE6822 HI-SINCERITY Issued Date 1993.06.30 Revised Date 2010.08.06 MICROELECTRONICS CORP. Page No. 1/5 HMBT2222A NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT2222A is designed for general purpose amplifier and high-speed switching, medium-power switching applications. SOT-23 Features High frequency current gain High Speed Switching Abs

Spec. No. HE9521 HI-SINCERITY Issued Date 1997.06.18 Revised Date 2008.08.04 MICROELECTRONICS CORP. Page No. 1/5 HM2222A NPN EPITAXIAL PLANAR TRANSISTOR Description The HM2222A is designed for general purpose amplifier and high speed, medium-power switching applications. Features SOT-89 Low collector saturation voltage High speed switching For co

Spec. No. HE6118 HI-SINCERITY Issued Date 1992.10.23 Revised Date 2004.12.15 MICROELECTRONICS CORP. Page No. 1/5 HPN2222A NPN EPITAXIAL PLANAR TRANSISTOR Description The HPN2222A is designed for general purpose amplifier and high speed, medium-power switching applications. Features TO-92 Low Collector Saturation Voltage High Speed Switching For Complementary U

AFT2222A Alfa-MOS Technology NPN General Purpose Amplifier Features This device is designed as a general purpose amplifier and switch. Pin Description ( SOT-23 ) Ordering Information Part Ordering No. Part Marking Package Unit Quantity AFT2222AT1S23RG 1P SOT-23 Tape & Reel 3000 EA Absolute Maximum Ratings (TA=25 Unless otherwise noted) Symbol Parameter Value Unit VCEO

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors TO-92 MPS2222A TRANSISTOR (NPN ) 1. EMITTER FEATURE Complementary NPN Type available (MPS2907A) 2. BASE 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units 1 2 3 VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emi

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR (NPN) SOT-23 FEATURES Epitaxial planar die construction 1. BASE Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V

Spec. No. C825L3 Issued Date 2006.04.25 CYStech Electronics Corp. Revised Date Page No. 1/4 NPN Epitaxial Planar Transistor PZT2222AL3 Features High current, max. 600mA Low voltage, max. 40V Pb-free package Applications Switching and linear amplification Symbol Outline PZT2222AL3 SOT-223 C E C B Base B C Collector E Emitter

Spec. No. C227A3 Issued Date 2003.03.26 CYStech Electronics Corp. Revised Date 2014.04.25 Page No. 1/8 General Purpose NPN Epitaxial Planar Transistor BTN2222A3 Description Low collector output capacitance. High current capability Low leakage current High cutoff frequency Pb-free lead plating and halogen-free package Symbol Outline BTN2222

Spec. No. C227N3 Issued Date 2003.06.11 CYStech Electronics Corp. Revised Date 2013.10.31 Page No. 1/8 General Purpose NPN Epitaxial Planar Transistor BTN2222AN3 Description The BTN2222AN3 is designed for general purpose amplifier applications. It is housed in the SOT-23 package which is designed for low power surface mount applications. Low VCE(sat) Lo

Spec. No. C203N3 Issued Date 2002.05.11 CYStech Electronics Corp. Revised Date 2010.11.12 Page No. 1/8 General Purpose NPN Epitaxial Planar Transistor MMBT2222A Description The MMBT2222A is designed for using in driver stage of AF amplifier and general purpose switching application. High I , I = 0.6A. C(Max) C(Max) Low V , Typ. V = 0.2V at I /I = 500mA/

Spec. No. C227L3 Issued Date 2004.03.17 CYStech Electronics Corp. Revised Date Page No. 1/4 General Purpose NPN Epitaxial Planar Transistor BTN2222AL3 Description Low collector output capacitance. High current capability Low leakage current High cutoff frequency Complementary to BTP2907AL3 Symbol BTN2222AL3 B Base C Collector E

MMBT2222A Rev.G Aug.-2018 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features 600mA Collector currents up to 600 mA. / Applications General purpose amplifier. / Equivalent Circuit

2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Sy

MMBT2222 / MMBT2222A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage MMBT2222 60 VCBO V MMBT2222A 75 Collector Emitter Voltage MMBT2222 30 VCEO V MMBT2222A 40 Emitter Base Voltage MMBT2222 5 VEBO V MMBT2222A 6 Collector Curr

LMBT2222ALT1G S-LMBT2222ALT1G General Purpose Transistors NPN Silicon 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT23(TO-236) qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Dev

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are LMBT2222AWT1G housed in the SOT 323/SC 70 package which S-LMBT2222AWT1G is designed for low power surface mount applications. We declare that the material of product 3 compliance with RoHS requirements. S- Prefix for Automotive a

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Silicon LMBT2222ADW1T1G S-LMBT2222ADW1T1G We declare that material of product compliance with ROHS requirements. S- Prefix for Automotive and Other Applications Requiring 6 5 Unique Site and Control Change Requirements; 4 AEC-Q101 Qualified and PPAP Capable. 1 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit SC-

LESHAN RADIO COMPANY, LTD. General Purpose Transistor LMBT2222ATT1G NPN Silicon S-LMBT2222ATT1G These transistors are designed for general purpose amplifier applications. They are housed in the SC-89 package which is designed for low power surface mount applications. Features compliance with RoHS requirements. We declare that the material of product S- Prefix for Automotive

LESHAN RADIO COMPANY, LTD. General Purpose Transistor LMBT2222ATT1G NPN Silicon S-LMBT2222ATT1G These transistors are designed for general purpose amplifier applications. They are housed in the SC-89 package which is designed for low power surface mount applications. Features compliance with RoHS requirements. We declare that the material of product S- Prefix for Automotive

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LMBT2222ALT1G FEATURES S-LMBT2222ALT1G 1) We declare that the material of product compliant with RoHS requirements and Halogen Free. 3 2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 2 SOT-23 DEVICE MARKING AN

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Silicon LMBT2222ADW1T1G S-LMBT2222ADW1T1G We declare that material of product compliance with ROHS requirements. S- Prefix for Automotive and Other Applications Requiring 6 5 Unique Site and Control Change Requirements; 4 AEC-Q101 Qualified and PPAP Capable. 1 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit SC-

3DG2222A(BT2222A) NPN PCM TC 75 300 mW ICM 600 mA Tjm 150 Tstg -55 150 V(BR)CBO ICB 0.1mA 75 V V(BR)CEO ICE 0.1mA 40 V V(BR)EBO IEB 0.1mA 6.0 V ICBO VCB=10V 1.0 A IEBO VCB=4V 1.0 A IC=0.5A VCEsat 0.6 V IB=0.05A VCE=10V

SMD Type Transistors Product specification KMBT2222A SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features High current (max. 600 mA) Low voltage (max.40 V). 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 75 V Collector-emitter voltag

SEMICONDUCTOR MPS2222A TECHNICAL DATA General Purpose Transistor B C NPN Silicon FEATURE DIM MILLIMETERS Complementary PNP Type available (MPS2907A) A 4.70 MAX E B 4.80 MAX G C 3.70 MAX D D 0.55 MAX E 1.00 MAXIMUM RATINGS (TA=25 unless otherwise noted) F 1.27 G 0.85 H 0.45 _ Symbol Parameter Value Units H J 14.00 0.50 + L 2.30 F F M 0.51 MAX VCBO Collector-Base

SEMICONDUCTOR 2N2222AE TECHNICAL DATA General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier 3 applications. They are housed in the SC-89 package which is designed for low power surface mount applications. 1 Features 2 compliance with RoHS requirements. We declare that the material of product SC-89 ORDERING INFORMATION COLLECTOR

SEMICONDUCTOR FFB2222AD TECHNICAL DATA Dual General Purpose Switching Transistors NPN Silicon We declare that material of product compliance with ROHS requirements. 6 5 4 1 2 3 MAXIMUM RATINGS SOT-363 (SC-88) Rating Symbol Value Unit Collector Emitter Voltage VCEO 40 Vdc Collector Base Voltage VCBO 75 Vdc Emitter Base Voltage VEBO 6.0 Vdc (3) (2) (1) Collector Cur

MMBT2222LTG,MMBT2222ALTG General Purpose Transistors Features Package outline Pb-Free Package May be Available. The G-Suffix Denotes a Pb-Free Lead Finish 3 Ordering Information 1 Device Package Shipping MMBT2222LTG SOT 23 3000/Tape & Reel 2 MMBT2222ALTG SOT 23 3000/Tape & Reel SOT 23 Maximum Ratings Rating Symbol 2222 2222A Unit 3 COLLECTOR Collector Emitter Vo

SEMICONDUCTOR 2N2222AS TECHNICAL DATA General Purpose Transistor NPN Silicon 3 compliance with RoHS requirements. We declare that the material of product 2 1 ORDERING INFORMATION SOT 23 Device Maring Shipping 2N2222AS 1P 3000 / Tape & Reel COLLECTOR 3 1 MAXIMUM RATINGS (TA = 25 C) BASE Rating Symbol Max Unit 2 Collector-Emitter Voltage VCEO 40 Vdc EMITTER Col

SEMICONDUCTOR 2N2222AU TECHNICAL DATA General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC-323/SC-70 package which 3 is designed for low power surface mount applications. Features 1 2 compliance with RoHS requirements. We declare that the material of product SC-70 / SOT 323 ORDERING INFO

SMD Type Transistors NPN Transistors PZT2222A (KZT2222A) Unit mm SOT-223 6.50 0.2 3.00 0.1 Features 4 Epitaxial planar die construction Complementary to PZT2907A 1 2 3 0.250 2.30 (typ) Gauge Plane 1.Base 2.Collector 0.70 0.1 3.Emitter 4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VC

SMD Type Transistors NPN Transistors PXT2222A (KXT2222A) 1.70 0.1 Features Epitaxial planar die construction Complementary to PXT2907A 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 75 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collector

SMD Type Transistors NPN Transistors MMST2222A (KMST2222A) Features Epitaxial planar die construction Complementary to MMST2907A 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 75 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 600

SMD Type Transistors NPN Transistors MMBT2222AT (KMBT2222AT) SOT-523 U nit m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15 0.05 Features 2 1 Small Package Complementary to MMBT2907AT 3 0.3 0.05 +0.1 0.5-0.1 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 75 Coll

SMD Type Transistors NPN Transistors PXT2222A (KXT2222A) 1.70 0.1 Features Epitaxial planar die construction Complementary to PXT2907A 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 75 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collector

D e s st s NPN Transistors MMBT2222A (KMBT2222A) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9-0.1 ) 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 70 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collec

SMD Type Transistors NPN Transistors FZT2222A (KZT2222A) Unit mm SOT-223 6.50 0.2 3.00 0.1 4 Features Collector Current Capability IC=0.6A Collector Emitter Voltage VCEO=40V Complementary to FZT2907A 1 2 3 0.250 2.30 (typ) 0.84 (max) Gauge Plane 0.66 (min) 1.Base C 2.Collector 3.Emitter 4.60 (typ) B 4.Collector E Absolute Maximum Ratings Ta

SMD Type Transistors NPN Transistors MMBT2222AT (KMBT2222AT) SOT-523 U nit m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15 0.05 Features 2 1 Small Package Complementary to MMBT2907AT 3 0.3 0.05 +0.1 0.5-0.1 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 75 Coll

SMD Type Transistors NPN Switching Transistor KMBT2222A SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features High current (max. 600 mA) Low voltage (max.40 V). 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 75 V Collector-emitter vol

SMD Type Transistors NPN Transistors PZT2222A (KZT2222A) Unit mm SOT-223 6.50 0.2 3.00 0.1 Features 4 Epitaxial planar die construction Complementary to PZT2907A 1 2 3 0.250 2.30 (typ) Gauge Plane 1.Base 2.Collector 0.70 0.1 3.Emitter 4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VC

SMD Type Transistors NPN Transistors MMST2222A (KMST2222A) Features Epitaxial planar die construction Complementary to MMST2907A 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 75 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 600

Radiation Hardened NPN Silicon Switching Transistors 2N2221A, 2N2221AL, 2N2221AUA, 2N2221AUB 2N2222A, 2N2222AL, 2N2222AUA, 2N2222AUB Features Qualified to MIL-PRF-19500/255 Levels Commerical JANS JANSM-3K Rads (Si) JANSD-l0K Rads (Si) JANSP-30K Rads (Si) JANSL-50K Rads (Si) JANSR-l00K Rads (Si) TO-18 (TO-206AA), Surface mount UA & UB Packages Absolute Maximum Ra

MMBT2222A NPN GENERAL PURPOSE SWITCHING TRANSISTOR 40 Volt POWER 225 mWatt VOLTAGE FEATURES NPN epitaxial silicon, planar design 0.120(3.04) 0.110(2.80) Collector-emitter voltage VCE = 40V Collector current IC = 600mA Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard 0.056(1.40) 0.047(1.20) 0.079(2.00) 0.008(0.20) 0.070

MMBT2222AW NPN GENERAL PURPOSE SWITCHING TRANSISTOR 40 Volt POWER 150 mWatt VOLTAGE FEATURES NPN epitaxial silicon, planar design Collector-emitter voltage VCE = 40V Collector current IC = 600mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA Case SOT-323, Plastic Te

CHENMKO ENTERPRISE CO.,LTD CHT2222AGP-A SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 FEATURE * Small surface mounting type. (SOT-23) * High current (Max.=600mA). * Suitable for high packing density. * Low voltage (Max.=40V) . (1) * High saturati

CHENMKO ENTERPRISE CO.,LTD CHT2222AGP SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 FEATURE * Small surface mounting type. (SOT-23) * High current (Max.=600mA). * Suitable for high packing density. * Low voltage (Max.=40V) . (1) * High saturation

Small Signal Transistor MMBT2222A-G (NPN) RoHS Device Features SOT-23 -NPN silicon epitaxial planar transistor for switching and amplifier application. 0.118(3.00) 0.110(2.80) 3 Mechanical data 0.055(1.40) 0.047(1.20) -Case SOT-23, molded plastic. 1 2 0.079(2.00) 0.071(1.80) -Terminals solderable per MIL-STD-750, method 2026. 0.006(0.15) 0.003(0.08) -Approx. weight 0

Small Signal Transistor MMBT2222A-HF (NPN) RoHS Device Halogen Free Features SOT-23 -NPN silicon epitaxial planar transistor for switching and amplifier application. 0.118(3.00) 0.110(2.80) 3 Mechanical data 0.055(1.40) 0.047(1.20) -Case SOT-23, molded plastic. 1 2 0.079(2.00) 0.071(1.80) -Terminals solderable per MIL-STD-750, method 2026. 0.006(0.15) 0.003(0.08) -Ap

General Purpose Transistor MMST2222A-G (NPN) RoHS Device Features -Power dissipation SOT-323 O PCM 0.2W (TA=25 C) -Collector current 0.087 (2.20) 0.070 (1.8) ICM 0.6A 3 -Collector-base voltage 0.054 (1.35) 0.045 (1.15) V(BR)CBO 75V 1 2 -Operating and storage junction temperature range 0.056 (1.40) O O TJ, TSTG -55 C to +150 C 0.047 (1.20) 0.006 (0.15) Marking

DC COMPONENTS CO., LTD. DMBT2222A DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose switching and amplifier applications. SOT-23 .020(0.50) .012(0.30) Pinning 1 = Base 3 2 = Emitter .063(1.60) .108(0.65) .055(1.40) .089(0.25) 3 = Collector 1 2 Absolute Maximum Ratings(TA=25oC) .045(1.15) .034(0.

TRANSISTOR KSP2222A MAIN CHARACTERISTICS FEATURES IC 500mA Epitaxial silicon VCEO 27V High switching speed VCBO 42V RoHS RoHS product PC 625mW APPLICATIONS High frequency switch power supply Commonly power amplifier circuit High frequency

GSTMMBT2222A NPN General Purpose Transistors Product Description Features This device is designed as a general purpose Lead(Pb)-Free amplifier and switch. Packages & Pin Assignments GSTMMBT2222AF(SOT-23) Pin Description 1 Base 2 Emitter 3 Collector Marking Information P/N Package Part Marking GSTMMBT2222AF SOT-23 1P Ordering Information GS P/N GSTMMBT2222A F Pb Fre

KBT2222AC NPN Silicon Transistor 2018.03.28 2018.03.28 2018.03.28 2018.03.28 1 000 2018.03.28 AUK Dalian 1 KBT2222AC NPN Silicon Transistor Descriptions General purpose application

2N2222A(3DG2222A) NPN /SILICON NPN TRANSISTOR Purpose General purpose amplifier. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 75 V CBO V 40 V CEO V 6.0 V EBO I 600 mA C P 625 mW C T 150 j T -55 150 stg /Electrical characteristics(

PT23T2222A NPN switching transistor Description 3 - Collector NPN switching transistor in a SOT-23 plastic package. 1 - Base 2 - Emitter Feature 3 High current (max. 600 mA) Lead finish 100% matte Sn(Tin) Mounting position Any Qualified max reflow temperature 260 Device meets MSL 1 requirements 1 2 Pure tin plating 7 17 um Fig.1 S

MMBT2222/MMBT2222A FEATURES FEATURES FEATURES FEATURES NPN Switching Transistor MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Symbol Unit Characteristic MMBT2222 MMBT2222A Collector-Emitter Voltage V 30 40 Vdc CEO Collector-Base Voltage V 60 75 Vdc CBO Emitter-Base Voltage V 5.0 6.0 Vdc EBO Collector Current-Continuous Ic 600 600 mAdc THERMAL CHARACTERISTI

MMDT2222A NPN Silicon Epitaxial Planar Transistor for general purpose and switching applications 6 5 4 TR2 TR1 1 2 3 1. Emitter 2. Base 3. Collector 4. Emitter 5. Base 6. Collector Simplified outline(SOT-363) O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 75 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V

MMBT2222AW NPN General Purpose Transistor 3 2 1.Base 2.Emitter 3.Collector 1 Features Simplified outline(SOT-323) General purpose transistor. 3.COLLECTOR 1.BASE 2.EMITTER Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-emitter voltage VCEO 40 V Collector-base voltage VCBO 75 V Emitter-base voltage VEBO 6.0 V Collector current IC 600 mA Total Devic

R UMW UMW MMBT2222A SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT2222A TRANSISTOR (NPN) FEATURES 1. BASE Epitaxial planar die construction 2. EMITTER Complementary PNP Type available(MMBT2907A) 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO 40 V Collector-Emitter Voltage VEBO

MMBT2222A Transistors SOT-23 Plastic-Encapsulate Transistors(NPN) RHOS Features SOT-23 Epitaxial planar die construction Complementary PNP Type available (MMBT2907A) Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Symbol Parameter Value Units VCBO Collector-Base Voltage 70 V 1. BASE VCEO Collector-Emitter Voltage 40 V 2. EMITT

SMD NPN Transistor Formosa MS MMBT2222 / MMBT2222A General Purpose Transistor NPN Silicon Package outline Features High collector-emitterbreakdien voltage. SOT-23 (BV = 40V@I =10mA) CEO C Small load switch transistor with high gain and low stauration voltage, is designed for general purpose amflifier and switching applications at collector current. Capable of 225mW pow

MMBT2222A SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) SOT- 23 Features Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) Marking 1P Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V V Collector-Emitter Voltage 40 V CEO V Emitter-Base Voltage 6 V EBO C I Collector Current 600 mA C P Collector Power D

MPS2222A General Purpose Transistor B C NPN Silicon FEATURE DIM MILLIMETERS Complementary PNP Type available (MPS2907A) A 4.70 MAX E B 4.80 MAX G C 3.70 MAX D D 0.55 MAX E 1.00 MAXIMUM RATINGS (TA=25 unless otherwise noted) F 1.27 G 0.85 H 0.45 _ Symbol Parameter Value Units H J 14.00 0.50 + L 2.30 F F M 0.51 MAX VCBO Collector-Base Voltage 75 V VCEO Collector-E

MMBT2222A NPN General Purpose Amplifier FEATURES Epitaxial planar die construction. Complementary PNP type available MMBT2907A. Ultra-small surface mount package. MSL 1 APPLICATIONS Use as a medium power amplifier. Switching requiring collector currents up to 500mA. SOT-23 MAXIMUM RA TING @ Ta=25 unless otherwise specified Symbol Parameter Valu

Jiangsu Yutai Electronics Co.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT2222A TRANSISTOR (NPN) 1. BASE FEATURES 2.EMITTER Epitaxial planar die construction 3.COLLECTOR Complementary PNP Type available(MMBT2907A) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO 40 V Collector-Emitter Vo

www.msksemi.com MMBT2222A-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) FEATURES Epitaxial planar die construction Complementary PNP Type available(MMBT2907A- MS) 1. BASE MARKING 1P 2. EMITTER SOT 23 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO 40 V Collector-Em

DATA SHEET MMBT2222A GENERAL PURPOSE TRANSISTOR NPN CURRENT 600 mA POWER 300 mW FEATURES HIGH DC CURRENT GAIN EPITAXIAL PLANAR DIE CONSTRUCTION COMPLEMENTARY PNP YTPE AVAILABLE MMBT2907/A LEAD FREE AND HALOGEN-FREE MECHANICAL DATA CASE SOT-23 TERMINAL SOLDERABLE PER MIL-STD-220G, METHOD 208 APPROX. WEIGHT 0.008 GRAMS CASE SOT-23 MAXIMUM RATINGS

MMBT2222/MMBT2222A NPN Silicon Epitaxial Planar Transistor SOT-23 Features For switching and amplifier applications 3 1 2 1.B 2.E 3.C Absolute Maximum Ratings (Ta=25 ) Parameter Symbol Value Unit Collector Base Voltage MMBT2222 60 VCBO V MMBT2222A 75 Collector Emitter Voltage MMBT2222 30 VCEO V MMBT2222A 40 Emitter Base Voltage MMBT2222 5 VEBO V MMBT2222A 6 Collector

Jingdao Microelectronics co.LTD MMBT2222A MMBT2222A SOT-23 NPN TRANSISTOR 3 FEATURES Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Symbol Parameter Value Unit 1.BASE Collector Base Voltage VCBO 75 V 2.EMITTER Collector Emitte

PXT2222A SOT-89-3 L Plastic-Encapsulate Transistors TRANSISTOR (NPN) SOT-89-3 L FEATURES 1. BASE Epitaxial planar die construction Complementary PNP Type available(PXT2907A) 2. COLLECTOR MARKING 1P 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO E

MMBT2222A SOT-23 NPN Transistors 3 2 1.Base 2.Emitter 1 3.Collector ) Simplified outline(SOT-23) Mrarking Marking 1P Absolute Maximum Ratin gs Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 70 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 600 mA Power Dissipation PD

MMBT2222A AO3400 SI2305 MMBT2222A TRANSISTOR (NPN) FEATURES SOT-23 Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1 BASE 2 EMITTER 3 COLLECTOR MARKING 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage 75 V VCBO VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage

RoHS RoHS COMPLIANT COMPLIANT MMST2222A NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moitsure Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package SOT-323 Molding compound meets UL 94 V-0 flammabi

RoHS RoHS COMPLIANT COMPLIANT MMBT2222A NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisure Sensitivity Level 1 High Conductance Surface mount package ideally Suited for Automatic Insertion Mechanical Data Package SOT-23 Molding compound meets UL 94 V-0 flamm

RoHS RoHS COMPLIANT COMPLIANT MMBT2222AQ NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 High Conductance Part no. with suffix Q means AEC-Q101 qualified Applications Switching and linear amplification Mechanical Data Case SOT-23 Terminals Tin plated lead

TH09/2479 TH97/2478 IATF 0113686 SGS TH07/1033 www.eicsemi.com MMBT2222E / MMBT2222AE NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage MMBT2222E 60 VCBO V MMBT2222AE 75 Collector Emitter Voltage MMBT2222E 30 VCEO V MMBT2222AE 40 Emitter Base Voltage

MMBT2222A MMBT2222A SOT-23 Plastic-Encapsulate Transistors(NPN) General description SOT-23 Plastic-Encapsulate Transistors(NPN) FEATURES Complementary to MMBT2907A Power Dissipation of 300mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 DEVICE MARKING CODE Device Type Device Marking MMBT2222A 1P . Maximu

MMBT2222A TRANSISTOR (NPN) FEATURES SOT-23 Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1 BASE 2 EMITTER 3 COLLECTOR MARKING 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage 75 V VCBO VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Curren

FHS2222A-ME NPN Transistor DESCRIPTIONS SOT-23 NPN NPN transistor in a SOT-23 Plastic Package. APPLICATIONS General purpose application,switching. PIN ASSIGNMENT 1 BASE 2 EMITTER 3 COLLECTOR Equivalent Circuit Name rule Name Addition

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD MMBT2222A FEATURES NPN Switching Transistor MAXIMUM RATINGS Characteristic Symbol Unit MMBT2222 MMBT2222A Collector-Emitter Voltage V 30 40 Vdc CEO - Collector-Base Voltage V 60 75 Vdc CBO -

MMBT2222A NPN GENERAL PURPOSE SWITCHING TRANSISTOR 75Volts POWER 300mWatts VOLTAGE FEATURES NPN epitaxial silicon, planar design. Collector-emitter voltage VCE=40V. Collector current IC=0.6A. ansition frequency fT>250MHz @ Tr IC=20mAdc, VCE=20Vdc, f=100MHz. In compliance with ER RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminals S

MMBT2222A BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to MMBT2907A Epitaxial planar die construction Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Value Unit C

PXT2222A-P1P NPN Plastic-Encap sulate Transistors SOT-89-3L Fea tures Epitaxial planar die construction Complementary PNP Type available(PXT2907A) 1.70 0.1 0.42 0.1 0.46 0.1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V Dimensions in millimeters VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Vo

PXT2222A NPN Plastic-Encap sulate Transistors SOT-89-3L Fea tures Epitaxial planar die construction Complementary PNP Type available(PXT2907A) 1.70 0.1 0.42 0.1 0.46 0.1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V Dimensions in millimeters VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A SOT-23 C Dim Min Max A 0.37 0.51 B C 1.20 1.40 B TOP VIEW B E C D 2.30 2.50 E G D 0.89 1.03 E 0.45 0.60 H G 1.78 2.05 K H 2.80 3.00 J J 0.013 0.10 K 0.903