2SA1244O . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SA1244 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1244 High Current Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) = -0.4 V (max) (I = -3 A) C High speed switching time: t = 1.0 s (typ.) stg Complementary to 2SC3074 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -60

DIP Type TransistorsPNP Transistors2SA1244TO-251 Features Low collector saturation voltage1 2 3 High speed switching time: tstg = 1.0 s (typ.) Complementary to 2SC30741 321 Base2 Collector3 EmitterUnit: mm Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50

2SA1244PNP TransistorsTO-251 Features Low collector saturation voltage1 2 3 High speed switching time: tstg = 1.0 s (typ.) Complementary to 2SC30741 321 Base2 Collector3 EmitterUnit: mm Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltag

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1244DESCRIPTIONWith TO-251(IPAK) packagingHigh speed switching timeLow collector saturation voltageComplement to type 2SC3074Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMedium power dissipationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U