S9013-MS . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

 ..1. Size:4035K  msksemi
 s9013-ms.pdf

www.msksemi.comS9013-MSSemiconductor CompianceSemiconductor Compiance TRANSISTOR (NPN)FEATURES High Collector Current. Complementary to S9012-MS Excellent hFE Linearity.1. BASE2. EMITTERMARKING: J3 SOT23 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Volta

 8.1. Size:201K  mcc
 mms9013-l.pdf

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMMS9013-LMicro Commercial ComponentsCA 91311Phone: (818) 701-4933MMS9013-HFax: (818) 701-4939Features SOT-23 Plastic-Encapsulate TransistorsNPN Silicon Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.5APlastic-Encapsulate Collector-base Voltage 40V Operating

 8.2. Size:201K  mcc
 mms9013-h.pdf

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMMS9013-LMicro Commercial ComponentsCA 91311Phone: (818) 701-4933MMS9013-HFax: (818) 701-4939Features SOT-23 Plastic-Encapsulate TransistorsNPN Silicon Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.5APlastic-Encapsulate Collector-base Voltage 40V Operating

 9.1. Size:40K  fairchild semi
 ss9013.pdf

SS90131W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (PT=625mW) High Collector Current. (IC=500mA) Complementary to SS9012 Excellent hFE linearity.TO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCB

 9.2. Size:53K  samsung
 ss9013.pdf

SS9013 NPN EPITAXIAL SILICON TRANSISTOR1W OUTPUT AMPLIFIER OF POTABLETO-92RADIOS IN CLASSB PUSH-PULL OPERATION. High total power dissipation. (PT=625mW) High Collector Current. (IC=500mA) Complementary to SS9012 Excelent hFE linearity.ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO 40VCollector-Emitter Vo

 9.3. Size:192K  mcc
 s9013h s9013g s9013i.pdf

MCCS9013-GTM Micro Commercial Components20736 Marilla Street Chatsworth S9013-HMicro Commercial ComponentsCA 91311S9013-IPhone: (818) 701-4933Fax: (818) 701-4939Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25OC) of Power Dissipation.NPN Silicon Collector-current 0.5A Collector-base Voltage 40VTransistors Operating and

 9.4. Size:197K  auk
 sts9013.pdf

STS9013NPN Silicon TransistorDescriptions PIN Connection General purpose application. C Switching application. BFeatures Excellent hFE linearity. E Complementary pair with STS9012 TO-92 Ordering Information Type NO. Marking Package Code STS9013 STS9013 TO-92 Absolute maximum ratings (Ta=25C) Characteristic Symbol Ratings UnitCollector-B

 9.5. Size:95K  secos
 s9013t.pdf

S9013TNPN Epitaxial Silicon TransistorRoHS Compliant ProductTO-92A suffix of "-C" specifies halogen & lead-free4.550.2 3.50.2 FEATURE Power dissipation PCM : 0.625 W Tamb=25 C Collector currentCM: 0.5 A I0.43+0.080.07 Collector-base voltage46+0.10. 0.1 V(BR)CBO : 40 V (1.27 Typ.) Operating and storage junction temperature range 1: Emitter+0.2

 9.6. Size:343K  secos
 s9013.pdf

 9.7. Size:54K  secos
 s9013w.pdf

S9013W 0.5A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-323 High Collector Current Excellent HFE Linearity AL33CLASSIFICATION OF hFE Top View C B11 2Product-Rank S9013W-L S9013W-H S9013W-J 2K ERange 120~200 200~350 300~400 DMarking Code J3

 9.8. Size:809K  jiangsu
 s9013.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors S9013 TRANSISTOR (NPN) SOT23 FEATURES High Collector Current. Complementary to S9012. Excellent hFE Linearity. 1. BASE MARKING: J3 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage

 9.9. Size:925K  jiangsu
 s9013w.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors S9013W TRANSISTOR (NPN) SOT323 FEATURES High Collector Current Excellent HFE Linearity MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 40 V CBO2. EMITTER V Collector-Emitter Voltage 25 V CEO3. C

 9.10. Size:967K  htsemi
 s9013.pdf

S901 3TRANSISTOR(NPN) SOT-23 FEATURES 1. BASE Complementary to S9012 2. EMITTER Excellent hFE linearity 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO 40 VCollector-Base Voltage VCEO 25 VCollector-Emitter Voltage VEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 500 mA PC Collector Power

 9.11. Size:431K  htsemi
 s9013w.pdf

S901 3WTRANSISTOR(NPN)SOT323 FEATURES High Collector Current Excellent HFE Linearity MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 40 V CBO2. EMITTER V Collector-Emitter Voltage 25 V CEO3. COLLECTOR V Emitter-Base Voltage 5 V EBOIC Collector Current 500 mA P Collector Power Dissipatio

 9.12. Size:240K  gsme
 s9013.pdf

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM9013FEATURESFEATURES FEATURESExcellent HFE Linearity HFE hFE(2)=25(Min.) at VCE=6V,Ic=400mA.Complementary to GM9012 GM9012 MAXIMUM RATINGS (Ta=25 )MAXIMUM RATIN

 9.13. Size:1555K  lge
 s9013.pdf

S9013 NPN Silicon Epitaxial Planar TransistorFEATURES A SOT-23 High Collector Current.(IC= 500mA). Dim Min Max Complementary To S9012. A 2.70 3.10EB 1.10 1.50K B Excellent HFE Linearity. C 1.0 TypicalD 0.4 Typical Power dissipation.(PC=300mW). E 0.35 0.48JDG 1.80 2.00GH 0.02 0.1J 0.1 TypicalAPPLICATIONS HK 2.20 2.60CAll Dimensions in mm Hi

 9.14. Size:167K  lge
 s9013 sot-23.pdf

S9013 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9012 Excellent hFE linearity MARKING: J3 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO 40 VCollector-Base Voltage VCEO 25 VCollector-Emitter Voltage VEBO Emitter-Base Voltage 5 VIC Collector

 9.15. Size:158K  lge
 s9013 to-92.pdf

S9013 Transistor(NPN)TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Complementary to S9012 Excellent hFE linearity MAXIMUM RATINGS TA=25 unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO 5 VEmitter-Base Voltage IC Collector Current -Continuous 500 mA Dimensions in inches and (milli

 9.16. Size:125K  wietron
 s9013lt1.pdf

S9013LT13P b Lead(Pb)-Free12SOT-23ValueVCEO20405.0500S9013PLT1=13P S9013QLT1=13Q S9013RLT1=13R S9013SLT1=13S0.12040100100u0.15350.15 u4.01/2 28-Apr-2011WEITRONhttp://www.weitron.com.twS9013LT1ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)Characteristics Symbol Max UnitMinON CHARACTERISTICSDC Current Gainh

 9.17. Size:407K  shenzhen
 s9013.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR (NPN) TO-92 FEATURE Complementary to S9012 1. EMITTER Excellent hFE linearity 2. BASE MAXIMUM RATINGS TA=25 unless otherwise noted 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emi

 9.18. Size:359K  shenzhen
 s9013lt1.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013LT1 TRANSISTOR (NPN) 1. BASE FEATURES 2. EMITTER 3. COLLECTOR Complementary to S9012 Excellent hFE linearity MARKING: J3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO 40 VCollector-Base Voltage VCEO 25 VCollector-Emitter

 9.19. Size:256K  can-sheng
 s9013.pdf

TO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate TransistorsFEATURESFEATURESFEATURES zFEATURESTO-92Complementary to S9012 zExcellent hFE linearity1.EMITTERMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGS (TA=25 unless otherwise noted)MAXIMUM RATINGS2.BASESymbol Parameter Val

 9.20. Size:260K  can-sheng
 s9013 sot-23.pdf

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors S9013 TRANSISTOR (NPN) FEATURES Complimentary to S9012 Collector current:Ic=0.5A MARKING:J3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units

 9.21. Size:200K  galaxy
 s9013.pdf

Product specification NPN Silicon Epitaxial Planar Transistor S9013 FEATURES Pb High Collector Current.(I = 500mA). CLead-free Complementary To S9012. Excellent H Linearity. FE Power dissipation.(P =300mW). CAPPLICATIONS High Collector Current. SOT-23 ORDERING INFORMATION Type No. Marking Package Code S9013 J3 SOT-23 : none is for

 9.22. Size:838K  slkor
 s9013d s9013e s9013f s9013g s9013h s9013i s9013j.pdf

S9013TRANSISTOR (NPN) FEATURES Complementary to S90121. EMITTER Excellent hFE linearity2. BASE3. COLLECTOREquivalent Circuit Collector-Base Voltage 40 V Collector-Emitter Voltage 25 V Emitter-Base Voltage 5 V Collector Current -Continuous 0.5 A Co

 9.23. Size:607K  anbon
 s9013.pdf

S9013General Purpose TransistorsNPN SiliconPackage outlineFeatures High collector current. (500mA)SOT-23 Lead-free parts for green partner, exceeds environmentalstandards of MIL-STD-19500 /228 Suffix "-H" indicates Halogen-free part, ex. S9013 -H.(B)(C)(A)Mechanical data Epoxy:UL94-V0 rated flame retardant 0.055 (1.40)0.024 (0.60)0.047 (1.20) 0.018 (0

 9.24. Size:3277K  born
 s9013.pdf

S9013Transistors SOT-23 Plastic-Encapsulate Transistors(NPN) RHOS SOT-23 Features Complementary to S9012 High Stability and High Reliability MARKINGJ3 1. BASE 2. EMITTER 3. COLLECTOR Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Parameters Symbol Value Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage V

 9.25. Size:2756K  fuxinsemi
 s9013.pdf

S9013 General Purpose Transistors NPN SiliconFEATURES High Collector Current. SOT-23 Complementary to S9012. Excellent hFE Linearity.MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current 500 mA PC Collector Power Dissipat

 9.26. Size:1942K  high diode
 s9013.pdf

S9 013SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N )Features SOT- 23High Collector Current. Complementary to S9012. Excellent hFE Linearity. Marking: J3Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V CV Collector-Emitter Voltage 25 V CEOV Emitter-Base Voltage 5 V EBOI Collector Current 500 mA CP Collector Power D

 9.27. Size:520K  jsmsemi
 s9013.pdf

S9013NPN Epitaxial Silicon TransistorTO-924.550.2 3.50.2 FEATURE Power dissipation PCM : 0.625 W Tamb=25 C Collector currentCM: 0.5 A I0.43+0.080.07 Collector-base voltage46+0.10. 0.1 V(BR)CBO : 40 V (1.27 Typ.) Operating and storage junction temperature range 1: Emitter+0.21.250.22: Base1 2 3stg:Tj, T -55 to +150 C3: Collector2.5

 9.28. Size:1438K  mdd
 s9013.pdf

S9013 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. FEATURES High Collector Current. Complementary to S9012. Excellent hFE Linearity. SOT-23 Plastic PackageMARKING: J3 OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 25 VEmitter Base Voltage VEB

 9.29. Size:619K  cn shikues
 s9013.pdf

 9.30. Size:411K  cn doeshare
 s9013.pdf

S9013 S9013 NPN Transistors General description SOT-23 Plastic-Encapsulate Transistors FEATURES Complementary to S9012 Power Dissipation of 300mW High Stability and High Reliability MECHANICAL DATA SOT-23 Small Outline Plastic Package Epoxy UL: 94V-0 Mounting Position: Any Marking: J3 Maximum Ratings & Thermal Characteristics TA = 25C unl

 9.31. Size:334K  cn cbi
 s9013.pdf

S9013 TRANSISTORNPN FEATURES SOT-23 Complementary to S9012 Excellent hFE linearity 1BASE 2EMITTER 3COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO 40 V Collector-Base Voltage VCEO 25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Coll

 9.32. Size:865K  cn cbi
 s9013w.pdf

SOT-323 Plastic-Encapsulate Transistors S9013W TRANSISTOR (NPN) SOT323 FEATURES High Collector Current Excellent HFE Linearity MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 40 V CBO2. EMITTER V Collector-Emitter Voltage 25 V CEO3. COLLECTOR V Emitter-Base Voltage 5 V EBOIC Collector Cu

 9.33. Size:228K  cn fosan
 s9013.pdf

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDS9013MAXIMUM RATINGS (T =25)aCharacteristic Symbol Rating Unit Collector-Base voltageV 40 VdcCBO--Collector-Emitter VoltageV 30 VdcCEO-Emitter-Base voltageV 5.0 VdcEBO

 9.34. Size:2001K  cn goodwork
 s9013.pdf

S9013NPN GENERAL PURPOSE SWITCHING TRANSISTOR25Volts POWER 300mWattsVOLTAGEFEATURESNPN epitaxial silicon, planar design. Collector-emitter voltage VCE=25V.Collector current IC=0.5A.ansition frequency fT>150MHz @ TrIC=20mAdc, VCE=6Vdc, f=30MHz.In compliance with ER RoHS 2002/95/EC directives.MECHANICAL DATACase: SOT-23, Plastic 3CTerminals: Solde

 9.35. Size:588K  cn hottech
 s9013.pdf

S9013BIPOLAR TRANSISTOR (NPN)FEATURES Complementary to S9012 Excellent h LinearityFE High Collector Current Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol

 9.36. Size:195K  inchange semiconductor
 s9013.pdf

isc Silicon NPN Power Transistor S9013DESCRIPTIONExcellent hFE linearityComplement to PNP Type S9012Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 40 VCBOV Collector-Emitter Voltage 25 VCEOV Emitter