S9014-MS . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

 ..1. Size:4373K  msksemi
 s9014-ms.pdf

www.msksemi.comS9014-MSSemiconductor CompianceSemiconductor Compiance TRANSISTOR (NPN)FEATURES Complementary to S9015-MS1. BASEMARKING: J6 2. EMITTERSOT23 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V V Collector-Emitter Voltage 45 V CEOV Emitter-Base Voltage 5 V EBOI Collector

 8.1. Size:179K  mcc
 mms9014-l.pdf

 8.2. Size:179K  mcc
 mms9014-h.pdf

 9.1. Size:38K  fairchild semi
 ss9014.pdf

SS9014Pre-Amplifier, Low Level & Low Noise High total power dissipation. (PT=450mW) High hFE and good linearity Complementary to SS9015TO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 50 VVCEO Collector-Emitter Voltage 45 VVEBO

 9.2. Size:47K  samsung
 ss9014.pdf

SS9014 NPN EPITAXIAL SILICON TRANSISTORPRE-AMPLIFIER, LOW LEVEL & LOW NOISETO-92 High total power dissipation. (PT=450mW) High hFE and good linearity Complementary to SS9015ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO 50VCollector-Emitter Voltage VCEO 45VEmitter-Base Voltage VEBO 5mACollector Current IC

 9.3. Size:219K  mcc
 s9014b s9014c s9014d.pdf

MCCS9014-BMicro Commercial ComponentsTM20736 Marilla Street ChatsworthS9014-CMicro Commercial ComponentsCA 91311Phone: (818) 701-4933S9014-DFax: (818) 701-4939Features TO-92 Plastic-Encapsulate Transistors Capable of 0.4Watts(Tamb=25OC) of Power Dissipation.NPN Silicon Collector-current 0.1A Collector-base Voltage 50VTransistors Operating and

 9.4. Size:495K  mcc
 mms9014.pdf

MMS9014Features Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1NPN Silicon Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSPlastic-EncapsulateCompliant. See Ordering Information)Maximum Ratings @ 25C Unless Otherwise SpecifiedTransistor Operating Junction Tempera

 9.5. Size:207K  auk
 sts9014.pdf

STS9014NPN Silicon TransistorDescription PIN Connection General purpose application C Switching application Features B Excellent hFE linearity : hFE(IC=0.1 mA) / hFE(IC=2 mA) = 0.95(Typ.) Low noise : NF=10dB(Max.) at f=1KHz E Complementary pair with STS9015 TO-92 Ordering Information Type NO. Marking Package Code STS9014 STS9014 TO-92A

 9.6. Size:263K  secos
 s9014w.pdf

S9014W NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURE Complementary to S9015W AL33Top View C B11 22K EPACKAGING INFORMATION Weight: 0.0074 g DCollectorH JF G3 Millimeter MillimeterREF. REF. Min. Max. Min. Max.MARKING CODE 1 A 1.

 9.7. Size:130K  secos
 s9014t.pdf

S9014TNPN SiliconElektronische BauelementePre-Amplifier, Low Level & Low NoiseRoHS Compliant Product A suffix of "-C" specifies halogen & lead-freeTO-92FEATURES4.550.2 3.50.2Power dissipation PCM : 0.4 WCollector currentICM : 0.1 ACollector-base voltageV(BR)CBO : 50 V0.43+0.080.0746+0.10. 0.1Operating & storage junction temperature(1.27

 9.8. Size:253K  secos
 s9014.pdf

S9014NPN SiliconElektronische Bauelemente Pre-Amplifier, Low Level & Low NoiseRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeSOT-23FEATURESCollectorDim Min Max33A 2.800 3.040B 1.200 1.400Power dissipation11C 0.890 1.1102 BasePCM : 0.2 WD 0.370 0.500Collector CurrentG 1.780 2.0402ICM : 0.1 A AEmitterH 0.013 0.100

 9.9. Size:931K  jiangsu
 s9014w.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors S9014W TRANSISTOR (NPN) SOT323 FEATURES Complementary to S9015W Small Surface Mount Package MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 50 V CBO2. EMITTER V Collector-Emitter Voltage 45 V CEO

 9.10. Size:778K  jiangsu
 s9014.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate TransistorsSOT-23 S9014 TRANSISTOR (NPN)1. BASE FEATURES2. EMITTER Complementary to S90153. COLLECTORMARKING: J6 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 50 V CBOVCEO Collector-Emitter Voltage 45 V V Emitter-Base Voltage 5 V

 9.11. Size:458K  htsemi
 s9014w.pdf

S901 4WTRANSISTOR(NPN)SOT323 FEATURES Complementary to S9015W Small Surface Mount Package MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 50 V CBO2. EMITTER V Collector-Emitter Voltage 45 V CEO3. COLLECTOR V Emitter-Base Voltage 5 V EBOIC Collector Current 100 mA P Collector Power Dissi

 9.12. Size:1202K  htsemi
 s9014.pdf

S901 4 TRANSISTOR (NPN) SOT-23 1. BASE FEATURES 2. EMITTER Complementary to S9015 3. COLLECTOR MARKING: J6 unless otherwise noted) MAXIMUM RATINGS (TA=25Symbol Parameter Value UnitsVCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 0.2 W T

 9.13. Size:241K  gsme
 s9014.pdf

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM9014FEATURESFEATURES FEATURESExcellent HFE Linearity HFE HFE(0.1mA)/ hFE(2mA)=0.95(Typ.)High HFE HFEHFE=200700Low Noise NF=1dB(Typ.),10dB(Max.).Comple

 9.14. Size:198K  lge
 s9014 sot-23.pdf

S9014 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9015 MARKING: J6 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A

 9.15. Size:190K  lge
 s9014 to-92.pdf

S9014(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. BASE 3. COLLECTOR Features High total power dissipation.(PC=0.45W) High hFE and good linearity Complementary to S9015 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V Dimensions in inches and (millimeters)VEBO

 9.16. Size:1521K  lge
 s9014.pdf

S9014 Silicon Epitaxial Planar TransistorFEATURES A SOT-23 Complementary To S9015. Dim Min MaxA 2.70 3.10E Excellent HFE Linearity. B 1.10 1.50K BC 1.0 Typical Power dissipation.(PC=0.2W) D 0.4 TypicalE 0.35 0.48JDG 1.80 2.00GH 0.02 0.1APPLICATIONS J 0.1 TypicalH Per-Amplifier low level & low noise. K 2.20 2.60CAll Dimensions in mm MAXIMUM

 9.17. Size:191K  wietron
 s9014lt1.pdf

S9014LT1312SOT-23ValueVCEO 45505.01002251.8556S9014QLT1=14Q S9014RLT1=14R S9014SLT1=14S S9014TLT1=14T0.14550100100u0.1400.1 u3.0WEITRON 1/ 28-Apr-2011http://www.weitron.com.twS9014LT1ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)CharacteristicsSymbol Max UnitMinON CHARACTERISTICSDC Current GainhFE 100

 9.18. Size:824K  wietron
 s9014.pdf

S9014NPN General Purpose TransistorsTO-921. EMITTER122. BASE33. COLLECTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating SymbolValue UnitCollector-Emitter Voltage VCEO 45 VdcCollector-Base Voltage VCBO 50VdcEmitter-Base Voltage VEBO5.0 VdcCollector Current IC100 mAdcPD 0.4Total Device Dissipation T =25 C WAJunction Temperature T 150j C-55 to +150Stor

 9.19. Size:588K  shenzhen
 s9014lt1.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors S9014LT1 TRANSISTOR NPN FEATURES High total power dissipation.(pc=0.2w) Complementary to S9015LT1 MARKING: L6 J6 MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitt

 9.20. Size:347K  shenzhen
 s9014.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S9014 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER 2. BASE Power dissipation 3. COLLECTOR PCM: 0.4 W (Tamb=25) Collector current ICM: 0.1 A 1 2 3 Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range TJ, Tstg: -55 to +150

 9.21. Size:317K  can-sheng
 s9014 sot-23.pdf

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors S9014 TRANSISTOR (NPN) FEATURES Complimentary to S9015 MARKING:J6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Vo

 9.22. Size:280K  can-sheng
 s9014.pdf

TO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate TransistorsFEATURESHigh total power dissipation.(PC=0.45W)TO-92High hFE and good linearityComplementary to S9015MAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGS (TA=25 unless otherwise noted)MAXIMUM RATINGS1.EMITTERSymbol Parameter

 9.23. Size:177K  galaxy
 s9014.pdf

Product specification Silicon Epitaxial Planar Transistor S9014 FEATURES Pb Complementary To S9015. Lead-free Excellent H Linearity. FE Power dissipation.(P =0.2W) CAPPLICATIONS Per-Amplifier low level & low noise. SOT-23 ORDERING INFORMATION Type No. Marking Package Code S9014 J6 SOT-23 : none is for Lead Free package; G is for

 9.24. Size:221K  globaltech semi
 gsts9014lt1.pdf

GSTS9014LT1 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage : 45V amplifier and switch. Collector Current : 100mA Lead(Pb)-FreePackages & Pin Assignments SOT-23 Pin Description1 Base 2 Emitter 3 Collector Marking Information P/N Package Rank Part Marking GSTS9014LT1F SOT-23 Q 14Q

 9.25. Size:331K  slkor
 s9014l s9014h.pdf

S9014NPN Silicon Epitaxial Planar TransistorFEATURES Complementary To S9015. Excellent HFE Linearity. Power dissipation.(PC=0.2W) APPLICATIONS Per-Amplifier low level & low noise. SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UnitsCollector-Base Voltage VCBO 50 VCollector-Emitter Voltage VCEO 45 VEmitter-Base Voltage VE

 9.26. Size:1090K  slkor
 s9014w-l s9014w-h.pdf

S9014Wwww.slkormicro.com1S9014Wwww.slkormicro.com2

 9.27. Size:904K  anbon
 s9014.pdf

S9014NPN SMD TransistorPackage outlineFeatures Collector current. (100mA)SOT-23 Pb-Free package is available Suffix "-H" indicates Halogen-free part, ex. S9014-H. (B)(C)(A)Mechanical data Epoxy:UL94-V0 rated flame retardant0.055 (1.40)0.027 (0.69)0.047 (1.20) 0.014 (0.35) Case : Molded plastic, SOT-230.104 (2.64)0.083 (2.10) Terminals :

 9.28. Size:1639K  born
 s9014.pdf

S9014Transistors SOT-23 Plastic-Encapsulate Transistors(NPN) RHOS SOT-23 FeaturesAs complementary type the PNP transistor S9015 is recommended Epitaxial planar die construction Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 50 V 1. BASE VCEO Collector-Emitter Voltage 4

 9.29. Size:3183K  fuxinsemi
 s9014.pdf

S9014General Purpose Transistors NPN SiliconFEATURES High Collector Current. SOT-23 Complementary to S9015. Excellent hFE Linearity.MAXIMUM RATINGS (Ta=25 unless otherwise noted)Symbol Parameter Value Unit V Collector-Base Voltage 50 V CBOV Collector-Emitter Voltage 45 V CEOV Emitter-Base Voltage 5 V EBOI Collector Current 100 mA CP Collector Power Di

 9.30. Size:438K  fms
 s9014.pdf

NPN SMD TransistorFormosa MSS9014General Purpose Transistors NPN SiliconPackage outlineFeaturesSOT-23 Collector current. (100mA) Pb-Free package is available Suffix "-H" indicates Halogen-free part, ex. S9014-H. (B)(C)(A)Mechanical data Epoxy:UL94-V0 rated flame retardant0.055 (1.40)0.027 (0.69)0.047 (1.20) 0.014 (0.35) Case : Molded plasti

 9.31. Size:2012K  high diode
 s9014.pdf

S9 014SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N )Features SOT- 23 Complementary to S9015 Marking: J6Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V CV Collector-Emitter Voltage 45 V CEOV Emitter-Base Voltage 5 V EBOI Collector Current 100 mA CP Collector Power Dissipation 200 mW CB ERJA Thermal Resistance From Junctio

 9.32. Size:1207K  jsmsemi
 s9014.pdf

S9014 Silicon Epitaxial Planar TransistorFEATURES Complementary to S9015Excellent h linearityFEPower dissipation (P = 0.2W)C APPLICATIONS Per-Amplifier low level & low noise SOT-23 MAXIMUM RATING @ T =25 unless otherwise specifiedASymbol Parameter Value Units Collector-Base Voltage V 50 V CBO Collector-Emitter Voltage V 45 V CEO Emitter-Base Voltage

 9.33. Size:1278K  mdd
 s9014.pdf

S901 4 TRANSISTOR (NPN) SOT-23 1. BASE FEATURES 2. EMITTER Complementary to S9015 3. COLLECTOR MARKING: J6 unless otherwise noted) MAXIMUM RATINGS (TA=25Symbol Parameter Value UnitsVCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 0.2 W T

 9.34. Size:895K  cn shikues
 s9014t-l s9014t-h.pdf

S9014TSOT-523 Plastic-Encapsulate Transistors TRANSISTOR (NPN)S9014TSOT523 FEATURES Small Surface Mount PackageMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASEV Collector-Base Voltage 50 V CBO2. EMITTERV Collector-Emitter Voltage 45 V CEO3. COLLECTORV Emitter-Base Voltage 5 V EBOI Collector Current 100 mA CP Col

 9.35. Size:573K  cn shikues
 s9014.pdf

 9.36. Size:933K  cn doeshare
 s9014.pdf

S9014 S9014 NPN Transistors General description SOT-23 Plastic-Encapsulate Transistors FEATURES Complementary to S9015 Power Dissipation of 200mW High Stability and High Reliability MECHANICAL DATA SOT-23 Small Outline Plastic Package Epoxy UL: 94V-0 Mounting Position: Any Marking: J6 Maximum Ratings & Thermal Characteristics TA = 25C unles

 9.37. Size:891K  cn cbi
 s9014w.pdf

SOT-323 Plastic-Encapsulate Transistors TRANSISTOR (NPN)SOT323 FEATURES Complementary to S9015W Small Surface Mount PackageMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 50 V CBO2. EMITTER V Collector-Emitter Voltage 45 V CEO3. COLLECTOR V Emitter-Base Voltage 5 V EBOI Collector Current 1

 9.38. Size:316K  cn cbi
 s9014.pdf

S9014 TRANSISTOR (NPN) FEATURES SOT-23 Complementary to S9015 1BASE 2EMITTER 3COLLECTOR MARKING: J6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter value units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 VVEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.1 A PC Collector Power Dissipation 0.2 W

 9.39. Size:971K  cn fosan
 s9014.pdf

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGYCO.,LTDS9014MAXIMUM RATINGS (Ta=25) CHARACTERISTIC Symbol Rating Unit Collector-Base VoltageV 50 VdcCBO-Collector-Emitter VoltageV 45 VdcCEO-Emitter-Base VoltageV 5.0 VdcEBO

 9.40. Size:2015K  cn goodwork
 s9014.pdf

S9014NPN GENERAL PURPOSE SWITCHING TRANSISTOR45Volts POWER 300mWattsVOLTAGEFEATURESNPN epitaxial silicon, planar design. Collector-emitter voltage VCE=45V.Collector current IC=0.1A.ansition frequency fT>150MHz @ TrIC=10mAdc, VCE=5Vdc, f=30MHz.In compliance with ER RoHS 2002/95/EC directives.MECHANICAL DATACase: SOT-23, Plastic 3CTerminals: Solde

 9.41. Size:645K  cn hottech
 s9014.pdf

S9014BIPOLAR TRANSISTOR (NPN)FEATURES Complementary to S9015 Excellent h LinearityFE Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol Value UnitCollector-Base V

 9.42. Size:545K  cn idchip
 s9014.pdf

NPN S9014S9014 TRANSISTOR (NPN) FEATURES SOT-23 Complementary to S9015 1BASE 2EMITTER 3COLLECTOR MARKING: J6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter value units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 VVEBO Emitter-Base Voltage 5 V IC Collector Curren