2SAR552P5 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SAR552P5

Código: MF

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.5 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 330 typ MHz

Capacitancia de salida (Cc): 25 pF

Ganancia de corriente contínua (hFE): 200

Encapsulados: SOT89

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2SAR552P5 datasheet

 ..1. Size:1816K  rohm
2sar552p5.pdf pdf_icon

2SAR552P5

2SAR552P5 Datasheet Middle Power Transistors (-30V / -3A) lOutline l SOT-89 Parameter Value SC-62 VCEO -30V IC -3A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage, typically VCE(sat) =-400mV (Max.) (IC/IB=-1A/-50mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging sp

 6.1. Size:1317K  rohm
2sar552pfra.pdf pdf_icon

2SAR552P5

2SAR552P 2SAR552PFRA Datasheet PNP -3.0A -30V Middle Power Transistor AEC-Q101 Qualified lOutline MPT3 Parameter Value VCEO -30V Base IC -3.0A Collector Emitter 2SAR552PFRA 2SAR552P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2) Complementary NPN Types 2SCR552P 2SCR552PFRA 3) Low VCE(sat) VCE(sat)= -0.4V(Max.) (IC/IB= -1A/ -50mA) 4) Lead Fr

 6.2. Size:236K  rohm
2sar552p.pdf pdf_icon

2SAR552P5

Midium Power Transistors (-30V / -3A) 2SAR552P Structure Dimensions (Unit mm) PNP Silicon epitaxial planar transistor Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50mA) (1) (2) (3) 2) High speed switching Applications Abbreviated symbol MF Driver Packaging specifications Inner circuit (Unit mm) Package Tapi

 8.1. Size:1516K  rohm
2sar553pfra.pdf pdf_icon

2SAR552P5

2SAR553P FRA Datasheet Middle Power Transistor (-50V / -2A) AEC-Q101 Qualified lOutline l SOT-89 Parameter Value SC-62 VCEO -50V IC -2A MPT3 lFeatures lInner circuit l l 1) Low saturation voltage VCE(sat) = -400mV (Max.) (IC/ IB=-700mA/-35mA) 2) High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITC

Otros transistores... S8550H-T3, 2SA1576U3, 2SA1576U3HZG, 2SAR293P5, 2SAR502U3, 2SAR512P5, 2SAR513P5, 2SAR533P5, 13009, 2SAR553P5, 2SAR553PHZG, 2SAR554P5, 2SAR572D3, 2SC4081U3, 2SC4081U3HZG, 2SC5876U3, 2SCR293P5