Справочник транзисторов. 2SAR552P5

 

Биполярный транзистор 2SAR552P5 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SAR552P5
   Маркировка: MF
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.5 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 3 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 330(typ) MHz
   Ёмкость коллекторного перехода (Cc): 25 pf
   Статический коэффициент передачи тока (hfe): 200
   Корпус транзистора: SOT89

 Аналоги (замена) для 2SAR552P5

 

 

2SAR552P5 Datasheet (PDF)

 ..1. Size:1816K  rohm
2sar552p5.pdf

2SAR552P5
2SAR552P5

2SAR552P5DatasheetMiddle Power Transistors (-30V / -3A)lOutlinel SOT-89 Parameter Value SC-62 VCEO-30VIC-3AMPT3lFeatures lInner circuitl l1)Low saturation voltage, typicallyVCE(sat) =-400mV (Max.)(IC/IB=-1A/-50mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackaging sp

 6.1. Size:1317K  rohm
2sar552pfra.pdf

2SAR552P5
2SAR552P5

2SAR552P2SAR552PFRADatasheetPNP -3.0A -30V Middle Power TransistorAEC-Q101 QualifiedlOutline MPT3Parameter ValueVCEO-30VBase IC-3.0A Collector Emitter 2SAR552PFRA2SAR552P lFeatures(SC-62) 1) Suitable for Middle Power Driver2) Complementary NPN Types : 2SCR552P2SCR552PFRA3) Low VCE(sat)VCE(sat)=-0.4V(Max.)(IC/IB= -1A/ -50mA)4) Lead Fr

 6.2. Size:236K  rohm
2sar552p.pdf

2SAR552P5
2SAR552P5

Midium Power Transistors (-30V / -3A) 2SAR552P Structure Dimensions (Unit : mm)PNP Silicon epitaxial planar transistor Features1) Low saturation voltage, typicallyVCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50mA)(1) (2) (3)2) High speed switching ApplicationsAbbreviated symbol : MFDriver Packaging specifications Inner circuit (Unit : mm)Package Tapi

 8.1. Size:1516K  rohm
2sar553pfra.pdf

2SAR552P5
2SAR552P5

2SAR553P FRADatasheetMiddle Power Transistor (-50V / -2A)AEC-Q101 QualifiedlOutlinel SOT-89 Parameter Value SC-62 VCEO-50VIC-2AMPT3lFeatures lInner circuitl l1) Low saturation voltageVCE(sat) = -400mV (Max.) (IC/ IB=-700mA/-35mA)2) High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITC

 8.2. Size:1080K  rohm
2sar554r.pdf

2SAR552P5
2SAR552P5

2SAR554RDatasheetPNP -1.5A -80V Middle Power TransistorlOutlinel SOT-346T Parameter Value SC-96 VCEO-80VIC-1.5ATSMT3lFeatures lInner circuitl l1)Suitable for Middle Power Driver2)Complementary NPN Types:2SCR554R3)Low VCE(sat)VCE(sat)=-400mV (Max.)(IC/IB=-500mA/-25mA)lApplicationlLOW FREQUENCY AMPLIFIER, H

 8.3. Size:391K  rohm
2sar553r.pdf

2SAR552P5
2SAR552P5

2SAR553RDatasheetPNP -2.0A -50V Middle Power TransistorlOutline TSMT3Parameter ValueCollector VCEO-50VBase IC-2.0AEmitter 2SAR553R lFeatures(SC-96) 1) Suitable for Middle Power Driver2) Complementary NPN Types : 2SCR553R3) Low VCE(sat)VCE(sat)= -0.4V(Max.)(IC/IB= -700mA/ -35mA)4) Lead Free/RoHS Compliant.lInner circuitCollector lApplicationsMoto

 8.4. Size:685K  rohm
2sar554p.pdf

2SAR552P5
2SAR552P5

2SAR554PData SheetPNP -1.5A -80V Middle Power TransistorlOutline MPT3Parameter ValueVCEO-80VBase IC-1.5A Collector Emitter 2SAR554P lFeatures(SC-62) 1) Suitable for Middle Power Driver2) Complementary NPN Types : 2SCR554P3) Low VCE(sat)VCE(sat)= -0.40V(Max.)(IC/IB= -500mA/ -25mA)4) Lead Free/RoHS Compliant.lInner circuitCollector lApplica

 8.5. Size:1557K  rohm
2sar553phzg.pdf

2SAR552P5
2SAR552P5

2SAR553P HZGMiddle Power Transistor (-50V / -2A)DatasheetlOutlinel SOT-89 Parameter Value SC-62 VCEO-50VIC-2AMPT3lFeatures lInner circuitl l1)Low saturation voltageVCE(sat) = -400mV (Max.)(IC/ IB=-700mA/-35mA)2)High speed switching3)AEC-Q101 QualifiedlApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING

 8.6. Size:1811K  rohm
2sar554p5.pdf

2SAR552P5
2SAR552P5

2SAR554P5DatasheetMiddle Power Transistors (-80V / -1.5V)lOutlinel SOT-89 Parameter Value SC-62 VCEO-80VIC-1.5AMPT3lFeatures lInner circuitl l1)Low saturation voltage, typicallyVCE(sat)=-400mV (Max.)(IC/IB=-500mA/-25mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackag

 8.7. Size:617K  rohm
2sar553p.pdf

2SAR552P5
2SAR552P5

2SAR553PData SheetPNP -2.0A -50V Middle Power TransistorlOutline MPT3Parameter ValueVCEO-50VBase ICCollector -2.0AEmitter 2SAR553P lFeatures(SC-62) 1) Suitable for Middle Power Driver2) Complementary NPN Types : 2SCR553P3) Low VCE(sat)VCE(sat)= -0.4V(Max.)(IC/IB= -700mA/ -35mA)4) Lead Free/RoHS Compliant.lInner circuitCollector lApplica

 8.8. Size:1840K  rohm
2sar553p5.pdf

2SAR552P5
2SAR552P5

2SAR553P5DatasheetMidium Power Transistors (-50V / -2A)lOutlinel SOT-89 Parameter Value SC-62 VCEO-50VIC-2AMPT3lFeatures lInner circuitl l1) Low saturation voltage, typicallyVCE(sat) = -0.4V (Max.) (IC/ IB= -700mA / -35mA)2) High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackaging

 8.9. Size:1314K  rohm
2sar554pfra.pdf

2SAR552P5
2SAR552P5

2SAR554P2SAR554PFRADatasheetPNP -1.5A -80V Middle Power TransistorAEC-Q101 QualifiedlOutline MPT3Parameter ValueVCEO-80VBase IC-1.5A Collector Emitter 2SAR554PFRA2SAR554P lFeatures(SC-62) 1) Suitable for Middle Power Driver2) Complementary NPN Types : 2SCR554P2SCR554PFRA3) Low VCE(sat)VCE(sat)= -0.40V(Max.)(IC/IB= -500mA/ -25mA)4) Lead

Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
Back to Top