2SCR544P5 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SCR544P5
Código: NS
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 2.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 280(typ) MHz
Capacitancia de salida (Cc): 16 pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: SOT89
Búsqueda de reemplazo de transistor bipolar 2SCR544P5
2SCR544P5 Datasheet (PDF)
2scr544p5.pdf
2SCR544P5DatasheetMidium Power Transistors (80V / 2.5A)lOutlinel SOT-89 Parameter Value SC-62 VCEO80VIC2.5AMPT3lFeatures lInner circuitl l1)Low saturation voltage,typicallyVCE(sat)=300mV(Max.)(IC/ IB=1A/50mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackaging specifi
2scr544p.pdf
Midium Power Transistors (80V / 2.5A) 2SCR544P Structure Dimensions (Unit : mm)NPN Silicon epitaxial planar transistor Features1) Low saturation voltage, typicallyVCE (sat) = 0.3V (Max.) (IC / IB= 1A / 50mA)(1) (2) (3)2) High speed switching ApplicationsAbbreviated symbol : NSDriver Packaging specifications Inner circuit (Unit : mm)Package Taping
2scr544pfra.pdf
2SCR544P2SCR544PFRAData SheetNPN 2.5A 80V Middle Power TransistorAEC-Q101 QualifiedlOutline MPT3Parameter ValueVCEO80VBaseCollectorIC2.5AEmitter2SCR544PFRA2SCR544PlFeatures(SC-62)1) Suitable for Middle Power Driver2) Complementary PNP Types : 2SAR544P 2SAR544PFRA3) Low VCE(sat)VCE(sat)=0.4V Max. (IC/IB=1A/50mA)4) Lead Free/RoHS Compliant
2scr544r.pdf
2SCR544RDatasheetNPN 2.5A 80V Middle Power TransistorlOutlinelParameter Value TSMT3VCEO80VIC2.5ASOT-346TSC-96 lFeaturesl1)Suitable for Middle Power DriverlInner circuitl2)Complementary PNP Types:2SAR544R3)Low VCE(sat)VCE(sat)=300mV(Max.)(IC/IB=1A/50mA)lApplicationlLOW FREQU
2scr544d.pdf
Midium Power Transistors (80V / 2.5A) 2SCR544D Structure Dimensions (Unit : mm)NPN Silicon epitaxial planar transistorCPT36.55.12.30.5 Features1) Low saturation voltage, typicallyVCE (sat) = 0.3V (Max.) (IC / IB= 1A / 50mA)0.752) High speed switching0.650.92.32.3(1) (2) (3)0.51.0 ApplicationsDriver Packaging specifications Inner
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: UMT4401U3
History: UMT4401U3
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