All Transistors. 2SCR544P5 Datasheet


2SCR544P5 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SCR544P5

SMD Transistor Code: NS

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 2.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 280(typ) MHz

Collector Capacitance (Cc): 16 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT89

2SCR544P5 Transistor Equivalent Substitute - Cross-Reference Search


2SCR544P5 Datasheet (PDF)

 ..1. Size:1808K  rohm

2SCR544P5 2SCR544P5

2SCR544P5DatasheetMidium Power Transistors (80V / 2.5A)lOutlinel SOT-89 Parameter Value SC-62 VCEO80VIC2.5AMPT3lFeatures lInner circuitl l1)Low saturation voltage,typicallyVCE(sat)=300mV(Max.)(IC/ IB=1A/50mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackaging specifi

 6.1. Size:1513K  rohm

2SCR544P5 2SCR544P5

2SCR544P2SCR544PFRAData SheetNPN 2.5A 80V Middle Power TransistorAEC-Q101 QualifiedlOutline MPT3Parameter ValueVCEO80VBaseCollectorIC2.5AEmitter2SCR544PFRA2SCR544PlFeatures(SC-62)1) Suitable for Middle Power Driver2) Complementary PNP Types : 2SAR544P 2SAR544PFRA3) Low VCE(sat)VCE(sat)=0.4V Max. (IC/IB=1A/50mA)4) Lead Free/RoHS Compliant

 6.2. Size:238K  rohm

2SCR544P5 2SCR544P5

Midium Power Transistors (80V / 2.5A) 2SCR544P Structure Dimensions (Unit : mm)NPN Silicon epitaxial planar transistor Features1) Low saturation voltage, typicallyVCE (sat) = 0.3V (Max.) (IC / IB= 1A / 50mA)(1) (2) (3)2) High speed switching ApplicationsAbbreviated symbol : NSDriver Packaging specifications Inner circuit (Unit : mm)Package Taping

 7.1. Size:1554K  rohm

2SCR544P5 2SCR544P5

2SCR544RDatasheetNPN 2.5A 80V Middle Power TransistorlOutlinelParameter Value TSMT3VCEO80VIC2.5ASOT-346TSC-96 lFeaturesl1)Suitable for Middle Power DriverlInner circuitl2)Complementary PNP Types:2SAR544R3)Low VCE(sat)VCE(sat)=300mV(Max.)(IC/IB=1A/50mA)lApplicationlLOW FREQU

 7.2. Size:418K  rohm

2SCR544P5 2SCR544P5

Midium Power Transistors (80V / 2.5A) 2SCR544D Structure Dimensions (Unit : mm)NPN Silicon epitaxial planar transistorCPT36. Features1) Low saturation voltage, typicallyVCE (sat) = 0.3V (Max.) (IC / IB= 1A / 50mA)0.752) High speed switching0.650.92.32.3(1) (2) (3)0.51.0 ApplicationsDriver Packaging specifications Inner

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2SB817 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .


Back to Top