2SB806-KQ . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SMD Type TransistorsSMD TypePNP Transistors2SB806 Features Classification of hfe(1)1.70 0.1 High collector to emitter voltage: VCEO -120V. =0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -120 VCollector-emitter voltage VCEO -120 VEmitter-base voltage VEBO -5 VC

SMD Type TransistorsPNP Transistors2SB8001.70 0.1 Features High Collector to Emitter Voltage:VCEO>-80V Complement to 2SD10010.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO -80 V Emitter - Base Voltage VEBO -5 Collector Curr

SMD Type TransistorsSMD TypePNP Transistors2SB8051.70 0.1FeaturesHigh collector to emitter voltage: VCEO -100V.0.42 0.10.46 0.11.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -100 VCollector-emitter voltage VCEO -100 VEmitter-base voltage VEBO -5 VCollector current IC -0.7 ACollector current

SMD Type TransistorsPNP Transistors2SB804 Features1.70 0.1 World standard miniature package: SOT-89 High collector to base voltage:VCBO -100V Excell DC Current gain linearity.0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25 Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -100 Collector