All Transistors. 2SB806-KQ Datasheet

 

2SB806-KQ Datasheet and Replacement


   Type Designator: 2SB806-KQ
   SMD Transistor Code: KQ
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 75(typ) MHz
   Collector Capacitance (Cc): 14 pF
   Forward Current Transfer Ratio (hFE), MIN: 135
   Noise Figure, dB: -
   Package: SOT89
 
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2SB806-KQ Datasheet (PDF)

 ..1. Size:661K  cn shikues
 2sb806-kr 2sb806-kq 2sb806-kp.pdf pdf_icon

2SB806-KQ

 8.1. Size:234K  nec
 2sb805 2sb806.pdf pdf_icon

2SB806-KQ

 8.2. Size:817K  kexin
 2sb806.pdf pdf_icon

2SB806-KQ

SMD Type TransistorsSMD TypePNP Transistors2SB806 Features Classification of hfe(1)1.70 0.1 High collector to emitter voltage: VCEO -120V. =0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -120 VCollector-emitter voltage VCEO -120 VEmitter-base voltage VEBO -5 VC

 9.1. Size:211K  nec
 2sb800.pdf pdf_icon

2SB806-KQ

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Datasheet: 2SB1114ZM , 2SB1115-YK , 2SB1115-YL , 2SB1115-YM , 2SB1386P , 2SB1386Q , 2SB1386R , 2SB806-KP , BC549 , 2SB806-KR , 2SC2712-LG , 2SC2712-LL , 2SC2712-LO , 2SC2712-LY , 2SC2873O , 2SC2873Y , 2SC2884Y .

History: PDTA144VK | BC817-40LT1 | MUN5114DW1 | FCX1051A

Keywords - 2SB806-KQ transistor datasheet

 2SB806-KQ cross reference
 2SB806-KQ equivalent finder
 2SB806-KQ lookup
 2SB806-KQ substitution
 2SB806-KQ replacement

 

 
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