2SD1781K-Q Todos los transistores

 

2SD1781K-Q . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD1781K-Q
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 25 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 150 MHz
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT23
 

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2SD1781K-Q Datasheet (PDF)

 ..1. Size:542K  cn shikues
2sd1781k-q 2sd1781k-r.pdf pdf_icon

2SD1781K-Q

2SD1781KSilicon Epitaxial Planar Transistor FEATURES High Collector Current.(IC= 500mA Complementary To 2SB1197KExcellent HFE Linearity. High total power dissipation.(PC=300mW) APPLICATIONS High Collector Current. MAXIMUM RATING @ Ta=25 unless otherwise specified CLASSIFICATION OF hFE(1) REV.08 1 of 42SD1781KELECTRICAL CHARACTERISTICS @ Ta=25 unle

 6.1. Size:1661K  rohm
2sd1781k.pdf pdf_icon

2SD1781K-Q

2SD1781KDatasheetMedium Power Transistor (32V, 800mA)lOutlinelParameter Value SMT3VCEO32VIC800mASOT-346SC-59 lFeaturesl1)Very low VCE(sat).lInner circuitl VCE(sat)=0.1V(Typ.)(IC/IB=500mA/50mA)2)Higt current capacity in compact package.3)Complements the 2SB1197K.lApplicationl

 6.2. Size:969K  rohm
2sd1781kfra.pdf pdf_icon

2SD1781K-Q

2SD1781KFRA2SD1781KTransistorsAEC-Q101 QualifiedMedium Power Transistor (32V, 0.8A) 2SD1781K2SD1781KFRA External dimensions (Unit : mm) Features1) Very Low VCE(sat).2.90.2VCE(sat) = 0.1V(Typ.) 1.1+0.21.90.2 -0.1 IC / IB= 500 A / 50mA 0.80.10.95 0.952) High current capacity in compact package.(1) (2)0~0.13) Complements the 2SB1197K2SB1197K.(3)+0

 6.3. Size:214K  lge
2sd1781k sot-23-3l.pdf pdf_icon

2SD1781K-Q

2SD1781K SOT-23-3L Transistor(NPN)SOT-23-3L1. BASE 2. EMITTER 2.920.353. COLLECTOR 1.17Features2.80 1.60 Low voltage High saturation current capability 0.151.90MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO 40 VCollector-Base Voltage VCEO Collector-Emitter Voltage 32 V VEBO Emit

Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: LDTA114EET1G | BC848CMTF

 

 
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