2SD1781K-Q Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD1781K-Q
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT23
2SD1781K-Q Transistor Equivalent Substitute - Cross-Reference Search
2SD1781K-Q Datasheet (PDF)
2sd1781k-q 2sd1781k-r.pdf
2SD1781KSilicon Epitaxial Planar Transistor FEATURES High Collector Current.(IC= 500mA Complementary To 2SB1197KExcellent HFE Linearity. High total power dissipation.(PC=300mW) APPLICATIONS High Collector Current. MAXIMUM RATING @ Ta=25 unless otherwise specified CLASSIFICATION OF hFE(1) REV.08 1 of 42SD1781KELECTRICAL CHARACTERISTICS @ Ta=25 unle
2sd1781k.pdf
2SD1781KDatasheetMedium Power Transistor (32V, 800mA)lOutlinelParameter Value SMT3VCEO32VIC800mASOT-346SC-59 lFeaturesl1)Very low VCE(sat).lInner circuitl VCE(sat)=0.1V(Typ.)(IC/IB=500mA/50mA)2)Higt current capacity in compact package.3)Complements the 2SB1197K.lApplicationl
2sd1781kfra.pdf
2SD1781KFRA2SD1781KTransistorsAEC-Q101 QualifiedMedium Power Transistor (32V, 0.8A) 2SD1781K2SD1781KFRA External dimensions (Unit : mm) Features1) Very Low VCE(sat).2.90.2VCE(sat) = 0.1V(Typ.) 1.1+0.21.90.2 -0.1 IC / IB= 500 A / 50mA 0.80.10.95 0.952) High current capacity in compact package.(1) (2)0~0.13) Complements the 2SB1197K2SB1197K.(3)+0
2sd1781k sot-23-3l.pdf
2SD1781K SOT-23-3L Transistor(NPN)SOT-23-3L1. BASE 2. EMITTER 2.920.353. COLLECTOR 1.17Features2.80 1.60 Low voltage High saturation current capability 0.151.90MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO 40 VCollector-Base Voltage VCEO Collector-Emitter Voltage 32 V VEBO Emit
l2sd1781kqlt1g.pdf
LESHAN RADIO COMPANY, LTD.Medium Power TransistorL2SD1781KQLT1G SeriesS-L2SD1781KQLT1G Series(32V, 0.8A)L2SD1781KQLT1GFFeatures31) Very low VCE(sat).VCE(sat) t 0.4 V (Typ.)(IC / IB = 500mA / 50mA)12) High current capacity in compact2package.3) Complements the L2SB1197KXLT1G SOT-23 /TO-236AB4)We declare that the material of product compliance with RoHS requireme
l2sd1781krlt1g.pdf
LESHAN RADIO COMPANY, LTD.Medium Power TransistorL2SD1781KQLT1G Series(32V, 0.8A)S-L2SD1781KQLT1G SeriesL2SD1781KQLT1GFFeatures31) Very low VCE(sat).VCE(sat) t 0.4 V (Typ.)1(IC / IB = 500mA / 50mA)2) High current capacity in compact2package.SOT-23 /TO-236AB3) Complements the L2SB1197KXLT1G4)We declare that the material of product compliance with RoHS requirem
2sd1781kgp.pdf
CHENMKO ENTERPRISE CO.,LTD2SD1781KGPSURFACE MOUNTNPN Switching Transistor VOLTAGE 32 Volts CURRENT 0.8 AmpereAPPLICATION* Telephone and proferssional communction equipment.* Other switching applications.FEATURESOT-23* Small surface mounting type. (SOT-23)* Corrector peak current (Max.=1500mA). * Suitable for high packing density.* Low voltage (Max.=32V) .* High satur
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BDT41A | BCY65E | BC215
