B772GR
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: B772GR
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5
W
Tensión colector-base (Vcb): 40
V
Tensión colector-emisor (Vce): 30
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 3
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50
MHz
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: SOT89-3L
Búsqueda de reemplazo de transistor bipolar B772GR
B772GR
Datasheet (PDF)
..1. Size:1219K slkor
b772r b772o b772y b772gr.pdf
B772 TRANSISTOR PNPFEATURES Low speed switching SOT-89 MAXIMUM RATINGS (TA=25 unless otherwise noted) 1. BASESymbol Parameter Value Units2. COLLECTORVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V 3. EMITTERVEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -3 A PC Collector Power Dissipation 0.5 W Tj Junction Tempera
..2. Size:208K cn shikues
b772r b772o b772y b772gr.pdf
SOT-89-3L Plastic-Encapsulate PNP Transistors EncapsulateFEATURE Low speed switching MARKING:B772 MAXIMUM RATINGS (Ta=25 unless otherwise noted) unless otherwise noted)ELECTRICAL CHARACTERISTICS (TELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) 1 of 2 2 of 2
..3. Size:725K wpmtek
b772r b772o b772y b772gr.pdf
B772 SOT-89-3L Plastic-Encapsulate Transistors TRANSISTORPNPSOT-89-3L FEATURE Low speed switching 1. BASEMARKING:B772 2. COLLETOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit3. EMITTERVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -3 A PC C
..4. Size:1155K cn yongyutai
b772r b772o b772y b772gr.pdf
B772 TRANSISTORPNPSOT-89FEATURE Low speed switching 1. BASEMARKING:B772 2. COLLETOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit3. EMITTERVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -3 A PC Collector Power Dissipation 0.5 W Thermal Res
..5. Size:646K cn zre
b772r b772o b772y b772gr.pdf
B772 TRANSISTOR(PNP)SOT-89-3L SOT-89-3LSOT-89-3LPlastic-Encapsulate Transistors Features Low speed switching Power Dissipation of 500mW High Stability and High Reliability Mechanical Data SOT-89-3L Outline Plastic Package Epoxy UL: 94V-0Marking: B772 Mounting Position: Any(TA = 25
9.1. Size:110K chenmko
2sb772gp.pdf
CHENMKO ENTERPRISE CO.,LTD2SB772GPSMALL FLAT PNP Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 AmpereAPPLICATION* Power driver and Dc to DC convertor .FEATURE* Small flat package. (SC-62/SOT-89)SC-62/SOT-89* Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-2A) * High speed switching time: tstg= 1.0uSec (typ.)* PC= 1.5 W (mounted on ceramic substrate).4.6MAX. 1.6MAX.
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