KTC4375O
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KTC4375O
Código: GO
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5
W
Tensión colector-base (Vcb): 30
V
Tensión colector-emisor (Vce): 30
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 1.5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 120(typ)
MHz
Capacitancia de salida (Cc): 40(max)
pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta:
SOT89
Búsqueda de reemplazo de transistor bipolar KTC4375O
KTC4375O
Datasheet (PDF)
..1. Size:1702K cn shikues
ktc4375o ktc4375y.pdf
KTC4375NPN Plastic-Encapsulate TransistorsEncapsulate Transistors FEATURES Low voltage MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitSOT-89VCBO 30 VCollector-Base Voltage 1. BASE 2. COLLECTOR 3. EMITTER VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation
7.1. Size:1553K jiangsu
ktc4375.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTC4375 TRANSISTOR (NPN) 1. BASE FEATURES Low voltage 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value UnitVCBO 30 VCollector-Base Voltage VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Colle
7.2. Size:352K kec
ktc4375.pdf
SEMICONDUCTOR KTC4375TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. FEATURES1W (Mounted on Ceramic Substrate).ACSmall Flat Package. HComplementary to KTA1663.L GMDIM MILLIMETERSA 4.70 MAXN_+B 2.50 0.20C 1.70 MAXDDMAXIMUM RATING (Ta=25)D 0.45+0.15/-0.10KE 4.25 MAX_+CHARACTERISTIC SYMBOL RATING UNIT F F F 1.50
7.3. Size:597K htsemi
ktc4375.pdf
KTC4375TRANSISTOR (NPN) SOT-89 FEATURES 1. BASE Low voltage 2. COLLECTOR 1 2 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value UnitsVCBO 30 VCollector-Base Voltage VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.5 W TJ Junction Temp
7.4. Size:188K lge
ktc4375 sot-89.pdf
KTC4375 SOT-89 Transistor(NPN)1. BASE SOT-891 2. COLLECTOR 4.62 B4.41.61.83. EMITTER 1.43 1.42.64.25Features 2.43.75 0.8 Low voltage MIN0.530.400.480.442x)0.13 B0.35 0.371.5MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.0Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO 30 VCollector-Base Voltage
7.5. Size:311K wietron
ktc4375.pdf
KTC4375NPN EPITAXIAL PLANAR TRANSISTORP b Lead(Pb)-Free1. BASE2. COLLECTOR3. EMITTER 123SOT-89ABSOLUTE MAXIMUM RATINGS(TaRating Symbol Value UnitVCBO30 VCollector-Base VoltageVCEO30 VCollector-Emitter VoltageVVEBO 5Emitter-Base VoltageICCollector Current-Continuous 1.5 APC0.5 WCollector Power DisspationJunction Temperature TJ 150 C-55 to 150
7.6. Size:779K blue-rocket-elect
ktc4375.pdf
KTC4375 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features , KTA1663 Small flat package, complementary to KTA1663. / Applications High current application. / Equivalent Circuit
7.7. Size:1131K kexin
ktc4375.pdf
SMD Type TransistorsNPN TransistorsKTC43751.70 0.1 Features Low voltage Comlementary to KTA16630.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 1.5 A Colle
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