2SB1197K-Q Todos los transistores

 

2SB1197K-Q . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SB1197K-Q
   Código: AFQ
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 32 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 150(typ) MHz
   Capacitancia de salida (Cc): 10 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de transistor bipolar 2SB1197K-Q

 

2SB1197K-Q Datasheet (PDF)

 ..1. Size:319K  slkor
2sb1197k-q 2sb1197k-r.pdf

2SB1197K-Q
2SB1197K-Q

2SB1197KPlastic-Encapsulate TransistorsSOT-23 (PNP) FEATURES Very low VCE(sat). VCE(sat)

 6.1. Size:1392K  rohm
2sb1197k.pdf

2SB1197K-Q
2SB1197K-Q

2SB1197KDatasheetLow Frequency Transistor (-32V, -0.8A)lOutlinel SOT-346 Parameter Value SC-59 VCEO-32VIC-800mASMT3lFeatures lInner circuitl l1) Low VCE(sat). VCE(sat)-500mV( IC= -500mA / IB= -50mA)2) IC= -0.8A.3) Complements the 2SD1781K.lApplicationlLOW FREQUENCY POWER AMPLIFIERlPackaging specif

 6.2. Size:620K  secos
2sb1197k.pdf

2SB1197K-Q
2SB1197K-Q

2SB1197K -0.8 A, -40 V PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SC-59 Low VCE(sat).VCE(sat)-0.5V(IC / IB = -0.5A /-50mA) A IC =-0.8A L3 3Top ViewC BMECHANICAL DATA 1 Case: SC-59, 1 22K E Weight: 0.008 grams(approx.) DCLASSIFICATION OF hFE H J

 6.3. Size:198K  lge
2sb1197k sot-23-3l.pdf

2SB1197K-Q
2SB1197K-Q

2SB1197K SOT-23-3L Transistor(PNP)SOT-23-3L1. BASE 2. EMITTER 2.920.353. COLLECTOR 1.17Features2.80 1.60 Power amplifier 0.151.90MAXIMUM RATINGS* TA=25 unless otherwise noted Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector- Base Voltage -40 VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collec

 6.4. Size:310K  willas
2sb1197kxlt1.pdf

2SB1197K-Q
2SB1197K-Q

FM120-M WILLAS2SB1197KxLT1THRULow Frequency TransistorFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order toPNP Silicon

 6.5. Size:117K  lrc
l2sb1197krlt1g.pdf

2SB1197K-Q
2SB1197K-Q

LESHAN RADIO COMPANY, LTD.Low Frequency TransistorL2SB1197KQLT1G SeriesS-L2SB1197KQLT1G SeriesPNP SiliconFEATURE High current capacity in compact package.3IC = -0.8A. Epitaxial planar type. NPN complement: L2SD1781K1 We declare that the material of product compliance with RoHS requirements.2 S- Prefix for Automotive and Other Applications Requiring Unique Site

 6.6. Size:113K  lrc
l2sb1197kqlt1g.pdf

2SB1197K-Q
2SB1197K-Q

LESHAN RADIO COMPANY, LTD.Low Frequency TransistorL2SB1197KQLT1G SeriesS-L2SB1197KQLT1G SeriesPNP SiliconFEATURE High current capacity in compact package.3IC = -0.8A. Epitaxial planar type.1 NPN complement: L2SD1781K We declare that the material of product compliance with RoHS requirements.2 S- Prefix for Automotive and Other Applications Requiring Unique Site

 6.7. Size:86K  chenmko
2sb1197kgp.pdf

2SB1197K-Q
2SB1197K-Q

CHENMKO ENTERPRISE CO.,LTD2SB1197KGPSURFACE MOUNT PNP Switching Transistor VOLTAGE 32 Volts CURRENT 0.8 AmpereAPPLICATION* Telephone and proferssional communction equipment.* Other switching applications.FEATURESOT-23* Small surface mounting type. (SOT-23)* Corrector peak current (Max.=1000mA). * Suitable for high packing density.* Low voltage (Max.=40V) .* High satu

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