2SB1197K-Q Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB1197K-Q
SMD Transistor Code: AFQ
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150(typ) MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT23
2SB1197K-Q Transistor Equivalent Substitute - Cross-Reference Search
2SB1197K-Q Datasheet (PDF)
2sb1197k-q 2sb1197k-r.pdf
2SB1197KPlastic-Encapsulate TransistorsSOT-23 (PNP) FEATURES Very low VCE(sat). VCE(sat)
2sb1197k.pdf
2SB1197KDatasheetLow Frequency Transistor (-32V, -0.8A)lOutlinel SOT-346 Parameter Value SC-59 VCEO-32VIC-800mASMT3lFeatures lInner circuitl l1) Low VCE(sat). VCE(sat)-500mV( IC= -500mA / IB= -50mA)2) IC= -0.8A.3) Complements the 2SD1781K.lApplicationlLOW FREQUENCY POWER AMPLIFIERlPackaging specif
2sb1197k.pdf
2SB1197K -0.8 A, -40 V PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SC-59 Low VCE(sat).VCE(sat)-0.5V(IC / IB = -0.5A /-50mA) A IC =-0.8A L3 3Top ViewC BMECHANICAL DATA 1 Case: SC-59, 1 22K E Weight: 0.008 grams(approx.) DCLASSIFICATION OF hFE H J
2sb1197k sot-23-3l.pdf
2SB1197K SOT-23-3L Transistor(PNP)SOT-23-3L1. BASE 2. EMITTER 2.920.353. COLLECTOR 1.17Features2.80 1.60 Power amplifier 0.151.90MAXIMUM RATINGS* TA=25 unless otherwise noted Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector- Base Voltage -40 VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collec
2sb1197kxlt1.pdf
FM120-M WILLAS2SB1197KxLT1THRULow Frequency TransistorFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order toPNP Silicon
l2sb1197krlt1g.pdf
LESHAN RADIO COMPANY, LTD.Low Frequency TransistorL2SB1197KQLT1G SeriesS-L2SB1197KQLT1G SeriesPNP SiliconFEATURE High current capacity in compact package.3IC = -0.8A. Epitaxial planar type. NPN complement: L2SD1781K1 We declare that the material of product compliance with RoHS requirements.2 S- Prefix for Automotive and Other Applications Requiring Unique Site
l2sb1197kqlt1g.pdf
LESHAN RADIO COMPANY, LTD.Low Frequency TransistorL2SB1197KQLT1G SeriesS-L2SB1197KQLT1G SeriesPNP SiliconFEATURE High current capacity in compact package.3IC = -0.8A. Epitaxial planar type.1 NPN complement: L2SD1781K We declare that the material of product compliance with RoHS requirements.2 S- Prefix for Automotive and Other Applications Requiring Unique Site
2sb1197kgp.pdf
CHENMKO ENTERPRISE CO.,LTD2SB1197KGPSURFACE MOUNT PNP Switching Transistor VOLTAGE 32 Volts CURRENT 0.8 AmpereAPPLICATION* Telephone and proferssional communction equipment.* Other switching applications.FEATURESOT-23* Small surface mounting type. (SOT-23)* Corrector peak current (Max.=1000mA). * Suitable for high packing density.* Low voltage (Max.=40V) .* High satu
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
