CZT5551A Datasheet. Equivalente

 ..1. Size:562K  slkor
 czt5551a czt5551n czt5551c.pdf

CZT5551 NPN Transistor Epitaxial Planar Transistor SOT-223 Description The CZT5551 is designed for general purpose applications requiring high breakdown voltages. REF. REF. Min. Max. Min. Max. A 6.70 7.30 B 13 TYP. C 2.90 3.10 J 2.30 REF. D 0.02 0.10 1 6.30 6.70 E 0 10 2 6.30 6.70 I 0.60 0.80 3 3.30 3.70 H 0.25 0.35 4 3.30 3.70 o 5 1.40 1.80 MAXIMUM RATINGS* (Tam

 7.1. Size:534K  central
 czt5551e.pdf

CZT5551E www.centralsemi.com ENHANCED SPECIFICATION SURFACE MOUNT DESCRIPTION NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CZT5551E is an NPN Silicon Transistor, packaged in an SOT-223 case, designed for general purpose amplifier applications requiring high breakdown voltage. MARKING FULL PART NUMBER FEATURES SOT-223 CASE SOT-223 CASE High Collector Breakdown Voltage

 7.2. Size:527K  central
 czt5551.pdf

CZT5551 www.centralsemi.com SURFACE MOUNT DESCRIPTION NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CZT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. MARKING FULL PART NUMBER SOT-223 CASE SOT-223 CASE MAXIMUM RATINGS (TA=25 C) SYMBOL UNITS Col

 7.3. Size:527K  central
 czt5551hc.pdf

CZT5551HC www.centralsemi.com SURFACE MOUNT HIGH CURRENT DESCRIPTION NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CZT5551HC type is a high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications. MARKING FULL PART NUMBER SOT-223 CASE SOT-223 CASE

 7.4. Size:669K  secos
 czt5551.pdf

CZT5551 NPN Transistor Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-223 Description The CZT5551 is designed for general purpose applications requiring high breakdown voltages. REF. REF. Min. Max. Min. Max. A 6.70 7.30 B 13 TYP. C 2.90 3.10 J 2.30 REF. 5 5 5 1 D 0.02 0.10 1 6.30 6.70 Date Code E 0 10 2 6.30 6.70 I 0.60 0.80 3 3.3

 7.5. Size:1146K  jiangsu
 czt5551.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors SOT-223 CZT5551 TRANSISTOR (NPN) FEATURES High Voltage 1. BASE High Voltage Amplifier Application 2. COLLECTOR MARKING 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 180 V CBO V Collector-Emitter Volt

 7.6. Size:924K  kexin
 czt5551.pdf

SMD Type Transistors NPN Transistors CZT5551 (KZT5551) Unit mm SOT-223 6.50 0.2 3.00 0.1 4 Features High Voltage High Voltage Amplifier Application 1 2 3 0.250 2.30 (typ) Gauge Plane 1.Base 2.Collector 0.70 0.1 3.Emitter 4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Colle